2SD2531 Search Results
2SD2531 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2SD2531 | Unknown | Japanese Transistor Cross References (2S) | Scan | 34.97KB | 1 | ||
| 2SD2531 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 41.17KB | 1 | ||
| 2SD2531 | Toshiba | Silicon NPN transistor for power amplifier applications | Scan | 180.11KB | 3 | ||
| 2SD2531 | Toshiba | Silicon NPN Triple Diffused Type Transistor | Scan | 180.86KB | 3 |
2SD2531 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SD2531Contextual Info: TOSHIBA 2SD2531 2SD2531 T O SH IBA TRANSISTO R PO W ER AM PLIFIER APPLICATIO NS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm r Low Collector Saturation Voltage : VCE = 0.5V Typ. (IC = 2.5A, IB = 0.25A) High Power Dissipation : Pc = 25W(Tc = 25°C) ( s a t ) |
OCR Scan |
2sd2531 | |
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Contextual Info: 2SD2531 TOSHIBA TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2531 Unit in mm 03.2 ± 0.2 10 ± 0-3 Low Collector Saturation Voltage : VCE sat = 0-5V (Typ.) (IC = 2.5A, IB = 0.25A) High Power Dissipation : P q = 25W (Tc = 25°C) |
OCR Scan |
2sd2531 | |
D2531
Abstract: 2SD2531 D-2531
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2sd2531sc-672-10r1ad2531+1 | |
2SD2531Contextual Info: TOSHIBA 2SD2531 2SD2531 T O SH IB A TR A N SIST O R P O W ER A M P LIF IER A PP LIC A TIO N S SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 10 ±0.3 Low Collector Saturation Voltage : VCE sat = °-5V (TyP-) ^C = 2-5A, IB = 0.25 A) High Power Dissipation : Pn = 25 W (Tc = 25°C) |
OCR Scan |
2sd2531 | |
2SD2531Contextual Info: TO SH IBA 2SD2531 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD2531 Unit in mm Low Collector Saturation Voltage : VCE sat = °-5V (TyP-) ^C = 2-5A, IB = 0.25 A) High Power Dissipation : Pn = 25 W (Tc = 25°C) ^3.2 ± 0.2 |
OCR Scan |
2sd2531 | |
2sd2531Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2531 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 1.0 (Max)@ IC= 2.5A ·High Power Dissipation: PC= 25W@ TC= 25℃ APPLICATIONS ·Designed for power amplifier applications |
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2sd2531 | |
d2531
Abstract: D-2531 2SD2531
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2sd2531sc-67oductsd2531d-2531 | |
2sd2531Contextual Info: TO SH IBA 2SD2531 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD2531 Unit in mm Low Collector Saturation Voltage : VCE sat = °-5V (TyP-) ^C = 2-5A, IB = 0.25 A) High Power Dissipation : Pn = 25 W (Tc = 25°C) o 1.1 ^3.2 ± 0.2 |
OCR Scan |
2sd2531 | |
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Contextual Info: TOSHIBA 2SD2531 TOSHIBA TRANSISTOR i SILICON NPN TRIPLE DIFFUSED TYPE < ; n i mm mmr s 3 1 w POWER AMPLIFIER APPLICATIONS U nit in mm 10 + 0.3 , ^ 3 .2 ± 0 .2 2J± 0 2 Low Collector Saturation Voltage : V C E s a t = 0.5V (Typ.) Oc = 2.5A, IB = 0.25A) High Power Dissipation |
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2sd2531 | |
2SC144
Abstract: 2SD466 2sc5266
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t258-omifax062sc1442sd466+1 | |
2SA1941 amp circuit
Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
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bce0016f2sa1941 amp circuit2sc33032sd880+7 | |
S78DM12Q
Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
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sn431sun0550f/do-220ab-3lo-220f-3l+14 | |
2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
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sc-63/64sc-62sc-59ot-23+16 | |
transistor
Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
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2sd11602sd11402sd12242sd1508+16 | |
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