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    TOSHIBA BIPOLAR POWER TRANSISTOR Search Results

    TOSHIBA BIPOLAR POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA BIPOLAR POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 PDF

    SMD TRANSISTOR H2A NPN

    Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
    Text: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Preliminary GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT30J324 High Power Switching Applications Fast Switching Applications ● ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS


    Original     		GT30J324 50kHz Tj125 GT30J324 PDF

    GT20J321

    Abstract: 600V 20A 50KHz
    Text: TOSHIBA Preliminary GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switching Applications ● ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS


    Original     		GT20J321 50kHz Tj125 GT20J321 600V 20A 50KHz PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Preliminary GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT50J325 High Power Switching Applications Fast Switching Applications ● ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS


    Original     		GT50J325 50kHz Tj125 PDF

    G6811

    Abstract: No abstract text available
    Text: TOSHIBA Preliminary GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 High Power Switching Applications Fast Switching Applications ● ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS


    Original     		GT10J321 50kHz Tj125 G6811 PDF

    gt10j321

    Abstract: No abstract text available
    Text: TOSHIBA Preliminary GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 High Power Switching Applications Fast Switching Applications ● ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS


    Original     		GT10J321 150kHz Tj125 gt10j321 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MP6301 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN & PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 MP6301 HIGH POWER SWITCHING APPLICATIONS. 3-PHASE MOTOR DRIVE AND BIPOLAR DRIVE OF PULSE MOTOR. INDUSTRIAL APPLICATIONS Small Package by Full Molding (SEP 12 Pin)


    OCR Scan     		MP6301 20//S --50A PDF

    GT25H101

    Abstract: GT25H Opto Speed SA
    Text: TOSHIBA {DIS CR ETE/O PT O! 90D 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E_| ciO,:17BSD D D l b l ñ ? TD SEMICONDUCTOR 16187 1 D T - 3 3 ' ^ 3 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT25H101 TECHNICAL DATA SILICON N-CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		15BKAX GT25H101-3 GT25H101 GT25H Opto Speed SA PDF

    MN3005

    Abstract: No abstract text available
    Text: GT15J102 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR f 'W i • T ■ iM r vm ■m SILICON N-CHANNEL IGBT w ? Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10 + 0.3 Collector Current Collector Power Dissipation Tc = 25°C


    OCR Scan     		GT15J102 2-10R1C MN3005 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT30J301 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT3QJ3Q1 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed ; tf=0t30/¿s Max, Low Saturation Voltage : Vq e (sat)~^.7V (Max.)


    OCR Scan     		GT30J301 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT30J311 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30/iS Max. Low Saturation Voltage : VQE(say = 2.7V (Max.)


    OCR Scan     		GT30J311 30/iS PDF

    TA75358

    Abstract: 2SA1203 2SC2883 SSOP24 TA8461F
    Text: TOSHIBA TA8461F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP TA8461F DUAL POWER OPERATIONAL AMPLIFIER The TA8461F is a multiple chip IC consisting of 4 saturated voltage discrete transistors and 1 dual operational amplifier. FEATURES • Large Output Current


    OCR Scan     		TA8461F TA8461F SSOP24 SSOP24-P-300-1 OUT21 OUT22 2SC2883 2SA1203 TA75358 TA75358 2SA1203 2SC2883 SSOP24 PDF

    rm5 relay

    Abstract: No abstract text available
    Text: TOSHIBA TA8225H/L TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8225H, TA8225L 45W BTL AUDIO AMPLIFIER The TA8225H, TA8225L is BTL audio power amplifier for consumer application. It is designed for high power, low distortion and low noise.


    OCR Scan     		TA8225H/L TA8225H, TA8225L TA8225L HZIP17-P-2 575TYP rm5 relay PDF

    TA8225

    Abstract: TA8225H TA8225L HZIP17-P-2 45W BTL HSIP17-P-2 45W Audio amplifier
    Text: TOSHIBA TA8225H/L TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8225H, TA8225L 45W BTL AUDIO AMPLIFIER The TA8225H, TA8225L is BTL audio power amplifier for consumer application. It is designed for high power, low distortion and low noise.


    OCR Scan     		TA8225H/L TA8225H, TA8225L TA8225L HZIP17-P-2 575typ HSIP17-P-2 TA8225 TA8225H 45W BTL 45W Audio amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TA8225H/L TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8225H, TA8225L 45W BTL AUDIO AMPLIFIER The TA8225H, TA8225L is BTL audio power amplifier for consumer application. It is designed for high power, low distortion and low noise.


    OCR Scan     		TA8225H/L TA8225H, TA8225L TA8225L HZIP17-P-2 575TYP PDF

    GT10Q301

    Abstract: No abstract text available
    Text: TOSHIBA GT10Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)


    OCR Scan     		GT10Q301 GT10Q301 PDF

    GT30J301

    Abstract: No abstract text available
    Text: GT30J301 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.30;i*s Max. Low Saturation Voltage : V qe (sat)~^.7V (Max.)


    OCR Scan     		GT30J301 GT30J301 PDF

    GT25H101

    Abstract: 1NSULAT 158KA OOLB
    Text: TOSHIBA {DISCRETE/OPTO} TO SH IBA D * T ' 3 3 ' I 3 . 90D 1 61 87 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR G T 2 5 H 1 0 1 TECHNICAL DATA SILICON N-CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. HOTOR CONTROL APPLICATIONS.


    OCR Scan     		158KA] 2-16C1C GT25H101-3 GT25H101 1NSULAT 158KA OOLB PDF

    toshiba gt20d201

    Abstract: GT20D201
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL GT20D201 DATA SILICON P CHANNEL TYPE GT20D201 Unit in mm HIGH POWER AMPLIFIER APPLICATION. • • • • High Breakdown Voltage : VGEg = —250V (MIN.) High Forward Transfer Admittance : |Yfe| = 10S (TYP.)


    OCR Scan     		GT20D201) GT20D201 --250V GT20D101 GT20D201 toshiba gt20d201 PDF

    GT15Q301

    Abstract: No abstract text available
    Text: TOSHIBA GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)


    OCR Scan     		GT15Q301 GT15Q301 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP. FRD


    OCR Scan     		GT60M303 25//s PDF

    TA31272FN

    Abstract: DRFM SSOP24
    Text: TOSHIBA TA31272FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA31272FN ASK/FSK RF/IF DETECTOR IC FOR LOW POWER WIRELESS SYSTEM TA31272FN is a 2-level frequency-shift keying/amplitudeshift keying compatible RF/IF detector IC for low power


    OCR Scan     		TA31272FN 272FN TA31272FN 450MHz SSOP24 000707EBA2 600Hz 80dB//VEMF 20kHz DRFM SSOP24 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT20J301 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.30//s Max. Low Saturation Voltage : V c e (sat) = 2-^^ (Max.)


    OCR Scan     		GT20J301 30//s --100A PDF