TO3P PACKAGE Search Results

Contextual Info: NTE2969 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3P Package Description: The NTE2969 is an N−channel enhancement mode power field effect transistor in a TO3P type package especially tailored to minimize on−state resistance, provide superior switching performance, and

NTE6093

Abstract: 30A SCHOTTKY BARRIER RECTIFIER low power loss rectifier transistor working principle uA 747
Contextual Info: NTE6093 Silicon Rectifier Dual, Schottky Barrier 60V, 60 Amp, TO3P Description: The NTE6093 is a silicon rectifier in a TO3P type package designed using the Schottky Barrier principle with a Molybenum barrier metal. Features: D Low Forward Voltage D Guard−Ring for Stress Protection

NTE6090

Abstract: TO218 package TO3P package
Contextual Info: NTE6090 Silicon Dual Power Rectifier 45V, 30 Amp, TO218/TO3P Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range

Silicon NPN Darlington transistor

Contextual Info: NTE214 Silicon NPN Transistor Darlington Driver Description: The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.

fkp280a

Abstract: FKP280 SANKEN sanken power transistor B105 CF35 T02-001EA-050912 ha 2005 fet t02 "Sanken Electric"
Contextual Info: N-Channel MOS FET FKP280A September, 2005 •Package-FM100 TO3P Full Mold ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit Ｄ(2)

T02-001EA-050912

Abstract: fkp280a
Contextual Info: N-Channel MOS FET FKP280A September, 2005 •Package-FM100 TO3P Full Mold ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit Ｄ(2)

T02-001EA-050912

Contextual Info: N-Channel MOS FET FKP280A September, 2005 •Package-FM100 TO3P Full Mold ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit Ｄ(2)

voltage regulator 24v 2a

Abstract: NTE116 NTE1940
Contextual Info: NTE1940 Integrated Circuit Positive Voltage Regulator, 24V, 2A Features: D 3 Pin Plastic Package TO3P D Only Output Capacitor is Externally Required D Precise Setting Voltage of ±2% D Wide Input Voltage Range ~45V D Built–in Current Foldback Protection

TO220 HEATSINK DATASHEET

Abstract: to220 mica 7721-7PPS Bush TO3 SILICONE MICA SHEET DATA SHEET 50A227B WARTH TO3P package 50B247A to3 HEATSINK
Contextual Info: MOUNTING HARDWARE HEATSINKS & MOUNTINGS WASHERS Economical, commercial grade silicone rubber insulating washers reinforced with glass fibre. Flame retardant to UL94V-0. Supplied specifically for the packages shown below. Colour - Grey. TO220 TO3P/TO247 TO3

FKP280A

Contextual Info: N-Channel MOS FET FKP280A September, 2005 Package-FM100 TO3P Full Mold Features Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit Absolute maximum ratings (Ta=25°C)

NTE7166

Contextual Info: NTE7166 Integrated Circuit Flyback Switching Regulator Description: The NTE7166 is an integrated circuit in a 5 - Lead Staggered TO3P type package and is specifically designed to satisfy the requirements for increased integration and reliability in off - line quasi- resonant

DC 5V to DC 100V CIRCUIT DIAGRAM

Abstract: 110v to 5v dc schematic transistor Ic 4A datasheet NPN 547 relay ic nte215
Contextual Info: NTE215 Silicon NPN Transistor Darlington Driver Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.

NTE116

Abstract: NTE1940
Contextual Info: NTE1940 Integrated Circuit Positive Voltage Regulator, 24V, 2A Features: D 3 Pin Plastic Package TO3P D Only Output Capacitor is Externally Required D Precise Setting Voltage of ±2% D Wide Input Voltage Range ~45V D Built−in Current Foldback Protection

NTE2314

Contextual Info: NTE2304 Silicon NPN Transistor High Current, High Speed Switch Compl to NTE2314 Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications.

NTE6093

Contextual Info: NTE6093 Silicon Rectifier Dual, Schottky Barrier Description: The NTE6093 is a silicon rectifier in a TO3P type package designed using the Schottky Barrier principle with a Molybenum barrier metal. Features: D Low Forward Voltage D Guard–Ring for Stress Protection

547 relay ic

Abstract: NTE2314 "PNP Transistor" HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
Contextual Info: NTE2314 Silicon PNP Transistor High Current, High Speed Switch Compl to NTE2304 Description: The NTE2314 is a silicon PNP transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications.

voltage regulator 12v 2a

Abstract: NTE1936 NTE116 voltage regulator -12v
Contextual Info: NTE1936 Integrated Circuit Positive Voltage Regulator, 12V, 2A Features: D 3 Pin Plastic Package TO3P D Only Output Capacitor is Externally Required D Precise Setting Voltage of ±2% D Wide Input Voltage Range ~45V D Built–in Current Foldback Protection

Contextual Info: NTE2678 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO3P H IS Type Package Features: D Built−In Damper Diode D High Voltage, High Speed Applications: D Color TV Horizontal Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Contextual Info: NTE2676 Silicon NPN Transistor High Voltage, High Speed Switch TO3P H IS Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D High Switching Speed D Low Saturation Voltage Applications: D Color TV Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

NTE6090

Abstract: TO218 package
Contextual Info: NTE6090 Silicon Dual Power Rectifier Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range

jst41

Contextual Info: FT4018.P INSULATED STANDARD TRIAC On-State Current 40 Amp INSULATED TO3P Gate Trigger Current £ 50 mA 18 Off-State Voltage 600 V ÷ 800 V 1 * Standard current TRIAC * Low thermal resistance with clip bounding * Low thermal resistance isolation ceramic for FT.P

std03n

Abstract: t01 transistor TRANSISTOR sanken catalog sanken power transistor T01001 sanken sanken audio
Contextual Info: Darlington Transistor with built-in compensation diodes STD03N March, 2006 •Package- MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode

TRANSISTOR sanken catalog

Abstract: SANKEN POWER TRANSISTOR t01 transistor SANKEN AUDIO STD03N STD03P T01001 B105 sanken transistor "Sanken Rectifiers"
Contextual Info: Darlington Transistor with built-in compensation diodes STD03N March, 2006 •Package- MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode

Contextual Info: FT4016.P INSULATED HIGH COMMUTATION TRIAC On-State Current Gate Trigger Current 40 Amp ≤ 50 mA 16 INSULATED TO3P Off-State Voltage 600 V ÷ 800 V 1 * Standard current TRIAC * Low thermal resistance with clip bounding * Low thermal resistance isolation