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2SB907 Datasheets (18)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SB907	Toshiba	Silicon PNP-darlington-tranistor+diode	Original	PDF	132.12KB	5
2SB907	Toshiba	PNP transistor	Original	PDF	197.04KB	5
2SB907	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	42.9KB	1
2SB907	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	106.03KB	2
2SB907	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	38.45KB	1
2SB907	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	112.57KB	1
2SB907	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	43.35KB	1
2SB907	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	76.75KB	1
2SB907	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	38.1KB	1
2SB907	Unknown	Cross Reference Datasheet	Scan	PDF	38.95KB	1
2SB907	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	49.05KB	1
2SB907	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	33.9KB	1
2SB907	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	32.33KB	1
2SB907	Toshiba	TRANS DARLINGTON PNP 40V 3A 3(2-7B1A)\|3(2-7B2A)	Scan	PDF	176.49KB	4

2SB907	Toshiba	Silicon PNP transistor for switching applications, hammer drive and pulse motor drive applications, power amplifier applications	Scan	PDF	209.2KB	5
2SB907	Toshiba	TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS)	Scan	PDF	209.93KB	5
2SB907A	Toshiba	TRANS DARLINGTON PNP 40V 3A 3(2-7B1A)	Scan	PDF	176.49KB	4
2SB907B	Toshiba	TRANS DARLINGTON PNP 40V 3A 3(2-7B2A)	Scan	PDF	176.49KB	4

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Toshiba America Electronic Components


Toshiba America Electronic Components 2SB907 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
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2SB907 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SB907 Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB907 U nit in mm SW ITCH IN G APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. High DC Current Gain : hFE(l) =2000 (Min.) (Vc e = - 2V, I c = - 1 A ) Low Saturation Voltage	OCR Scan	-2sb907 2sd1222 2sb907	PDF
2SB907 Abstract: B-907 B907 2SD1222 Contextual Info: 2SB907 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SB907 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −2 V, IC = −1 A)	Original	2sb907 2sd1222 20070701-ja b-907 +1b907	PDF
transistor B907 Contextual Info: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2sb907 2sd1222 transistor b907	PDF
Contextual Info: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2sb907 2sd1222	PDF
B907 Abstract: 2SB907 2SD1222 Contextual Info: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2sb907 2sd1222 b907	PDF
transistor B907 Abstract: B907 2SB907 2SD1222 Contextual Info: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) ·	Original	2sb907 2sd1222 transistor b907 b907	PDF
2SB907 Abstract: B907 2SD1222 Contextual Info: 2SB907 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SB907 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −2 V, IC = −1 A)	Original	2sb907 2sd1222 b907	PDF
2sd1222 equivalent Abstract: 2SB907 2SD1222 Contextual Info: TO SH IBA 2SB907 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 Unit in mm SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE M OTOR DRIVE APPLICATIONS (A) 6.8MAX., PO W E R A M PLIFIER APPLICATIONS High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = —2 V, IC = —1 A)	OCR Scan	2sb907 2sd1222 2sd1222 equivalent	PDF
Contextual Info: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2sb907 2sd1222	PDF
7550 - 1 Abstract: 2SB907 2SD1222 Contextual Info: TOSHIBA 2SB907 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 Unit in mm SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain : hpE(i) = 2000 (Min.) (V^E = -2 V , Iq	OCR Scan	2sb907 2sd1222 7550 - 1	PDF
Contextual Info: TOSHIBA 2SB907 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = -2 V , IC = -1 A )	OCR Scan	2sb907 2sd1222	PDF
transistor Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220 Contextual Info: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N	Original	2sd1160 2sd1140 2sd1224 2sd1508 +162sd1631 2sd1784 2sd2481 2sb907 2sd1222 2sd1412a transistor power transistor npn to-220 pnp power transistor to220 transistor pnp damper diode darlington transistor 2sd2206a power transistor npn darlington transistor to220	PDF
transistor B907 Abstract: B907 2SB907 2SD1222 Contextual Info: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2sb907 2sd1222 transistor b907 b907	PDF
cfl low loss drive Contextual Info: T O SH IB A 2SB907 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm & 8 MAX. 0.6 MAX. 5 .2 ± D .2 ÏZ • High DC Current Gain	OCR Scan	2sb907 2sd1222 cfl low loss drive	PDF

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SB907 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm &8UAX. FEATURES: . High DC Current Gain : h F E l =2000(Min.) (VCE=~2V, IC=-1A) . Low Saturation Voltage : VcE(sat)=-l-5V(Max.) (Ic=-2A)	OCR Scan	2sb907 2sd1222	PDF
2SB907 Abstract: 2SD1222 7550 - 1 transistor 7550 Contextual Info: TO SH IBA 2SB907 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 Unit in mm SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE M OTOR DRIVE APPLICATIONS (A) 6.8MAX., PO W E R A M PLIFIER APPLICATIONS High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = —2 V, IC = —1 A)	OCR Scan	2sb907 2sd1222 7550 - 1 transistor 7550	PDF
B907 Abstract: 2SB907 2SD1222 Contextual Info: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2sb907 2sd1222 b907	PDF
d1222 Abstract: 2sd1222 equivalent 2sD1222 2SB907 Contextual Info: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A)	Original	2sd1222 2sb907 15transportation d1222 +12sd1222 equivalent	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2sc429gtm 2sc458 2sc458lg 2sc503 +162sc504 2sc510 2sc512 2sc519 2sc520a 2sc594 sn76131 tlo72cp toshiba 2n3055 m53207p 2n3055 toshiba kia7313ap kia7640ap la5530 m5l8155p tbb1458b	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	sce0004l ttc4116 2sc4118 tta1586 +162sa1588 2sc4117 2sa1587 2sc5233 2sc4738 2sa1832 gt30f131 gt30f124 tk18a60v smd m5 transistor 6-pin smd transistor h2a npn gt50n322 marking smd pnp transistor h2a gt30j124 30f124 tpcp8r01	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2n5655 2n5656 2n5657 tip73b +14tip74 tip74a tip74b tip75 tip75a tip75b 2n5657 equivalent 2sa1046 bu326 bu108 bu100 2sc2331 y tip47 419 2n3792 application notes	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	bd157 bd158 bd159 tip73b +16tip74 tip74a tip74b tip75 tip75a tip75b mje494 2sc1419 bd 804 2sd675 mje104 bd581 bd135 curves mj1000 dts-4041 2n5037	PDF
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	2n6609 2n3773 2n6667 2n6668 +13220ab 2n6387 2n6388 2sd669 equivalent bd801 bdy29 equivalent bu108 2sc2080 2sd436 2n6021 bd345 tip122 d-pak package 2sd544	PDF
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	mjf6107 2n6107 e69369 tip73b +16tip74 tip74a tip74b tip75 tip75a tip75b 2sc495 nsp41a bu108 transistor bd614 motorola 2sa663 bd4122 bd661 mj1000 nsp2100 d45vh4 similar	PDF

2SB907 Search Results

2SB907 Datasheets (18)

2SB907 Price and Stock

Toshiba America Electronic Components 2SB907

2SB907 Datasheets Context Search

2SB907

2SB907

transistor B907

B907

transistor B907

2SB907

2sd1222 equivalent

7550 - 1

transistor

transistor B907

cfl low loss drive

2SB907

B907

d1222

sn76131

GT30F131

2N5657 equivalent

MJE494

2SD669 equivalent

2SC495