2SD252 Search Results

2SD2525

Abstract: 2SD252
Contextual Info: TO SH IBA 2SD2525 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2525 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS 10 ± 0.2 • • High DC Current Gain : 100 Min. Low Saturation Voltage I 01.2 ,x — 1 f t V n V T o v Ï íTam — o a T t ì - ì I O A ì

2SD2527

Abstract: IC104
Contextual Info: Power Transistors 2SD2527 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm • Features ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO

TRANSISTOR B1640

Contextual Info: 2SB1640 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1640 Audio Frequency Power Amplifier Unit: mm • Low saturation voltage: VCE sat = −1.5 V (max) • Collector metal (fin) is covered with mold region. • Complementary to 2SD2525 (IC = −2 A, IB = −0.2 A)

2SD2528

Abstract: 2sd25
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2528 Silicon NPN epitaxial planar type For power amplification and high-current amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 M Di ain sc te on na tin nc ue e/ d 2.9±0.2

2SD2524

Abstract: 2sd25
Contextual Info: Power Transistors 2SD2524 Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm ● • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage

2SD2528

Contextual Info: Power Transistors 2SD2528 Silicon NPN epitaxial planar type For power amplification and high-current amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open

2SD2528

Contextual Info: Power Transistors 2SD2528 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio Unit: mm • Features ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V

2SB1641

Abstract: 2SD2526 D2526 transistor equivalent type
Contextual Info: 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

2SD2528

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2528 Silicon NPN epitaxial planar type For power amplification and high-current amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features φ 3.2±0.1 Parameter

TRANSISTOR D2525

Abstract: D2525 2SD2525 2SB1640
Contextual Info: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications • Unit: mm High DC current gain: 100 min · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) · Complementary to 2SB1640

using of damper in Horizontal Output Transistor

Abstract: 2SD2524
Contextual Info: Power Transistors 2SD2524 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ● • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage VCES 1700 V Emitter to base voltage

TRANSISTOR D2525

Abstract: 2sd2525 2SB1640 D2525
Contextual Info: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640

Contextual Info: 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

2SD2525

Contextual Info: TOSHIBA 2SD2525 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2525 Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATIONS • • High DC Current Gain : 100 Min. Low Saturation Voltage : VCE(sat) = l-0V (Max.) (IC = 2A, IB = 0.2A) M A X IM U M RATINGS (Ta = 25°C)

2SB1641

Abstract: 2SD2526
Contextual Info: TO SH IBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ic = 3A) Low Saturation Voltage :

Contextual Info: T O SH IB A 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0.2 • • • i 61.2 High DC Current Gain : hFE = 2000 Min. (Vce = 3V, Ic = 3A)

2SD2528

Contextual Info: Power Transistors 2SD2528 Silicon NPN epitaxial planar type Unit: mm For power amplification with high forward current transfer ratio 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2525 U nit in mm A U D IO FREQUENCY POWER AMPLIFIER APPLICATIONS. • • High DC Current Gain : 100 Min. Low Saturation Voltage : v CE(sat) = 1-ov (M ax.)(Ic = 2A, Iß = 0.2A) -A r M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

TRANSISTOR D2525

Abstract: D2525 2SB1640 2SD2525
Contextual Info: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640

2SD2524

Contextual Info: Power Transistors 2SD2524 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 10.0 M Di ain sc te on na tin nc ue e/ d • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage

2SB1641

Abstract: 2SD2526
Contextual Info: TOSHIBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ie = 3A) Low Saturation Voltage :

2SB1641

Abstract: 2SD2526
Contextual Info: TO SH IBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ic = 3A) Low Saturation Voltage :

2SD2523

Abstract: 2sd25
Contextual Info: Power Transistors 2SD2523 Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm ● • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage

2SB1641

Abstract: 2SD2526 D2526
Contextual Info: 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)