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    2SD256 Search Results

    2SD256 Datasheets (44)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SD256
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 46.49KB 1
    2SD256
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 42.6KB 1
    2SD256
    Unknown Transistor Substitution Data Book 1993 Scan PDF 42.36KB 1
    2SD256
    Unknown The Japanese Transistor Manual 1981 Scan PDF 102.54KB 2
    2SD256
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 38.83KB 1
    2SD256
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 80.21KB 1
    2SD256
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 167.26KB 1
    2SD256
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 152.78KB 1
    2SD256
    Unknown Japanese Transistor Cross References (2S) Scan PDF 33.63KB 1
    2SD256
    Unknown Cross Reference Datasheet Scan PDF 38.3KB 1
    2SD256
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 113.29KB 1
    2SD256
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 87.66KB 1
    2SD256
    Sanken Electric Transistor For General Purpose Scan PDF 40.66KB 1
    2SD2560
    Allegro MicroSystems Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) Original PDF 23.35KB 1
    2SD2560
    Sanken Electric Power Transistor Selection Guide Original PDF 304.11KB 13
    2SD2560
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 36.3KB 1
    2SD2560
    Unknown Japanese Transistor Cross References (2S) Scan PDF 35.77KB 1
    2SD2561
    Allegro MicroSystems Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648) Original PDF 23.4KB 1
    2SD2561
    Sanken Electric MOSFET Transistor Original PDF 20.39KB 1
    2SD2561
    Sanken Electric Power Transistor Selection Guide Original PDF 304.11KB 13
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    2SD256 Price and Stock

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    Samtec Inc ZLTMM-112-02-S-D-256

    Conn Elevated Shrouded Header HDR 24 POS 2mm Solder ST Thru-Hole
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    Master Electronics ZLTMM-112-02-S-D-256
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    Sager ZLTMM-112-02-S-D-256
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    Samtec Inc TW-25-12-S-D-256-118

    FLEXIBLE SURFACE MOUNT BO
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    Master Electronics TW-25-12-S-D-256-118
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    Avnet Americas TW-25-12-S-D-256-118 Bulk 1 Weeks 1
    • 1 $12.32
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    Newark TW-25-12-S-D-256-118 Bulk 87 1
    • 1 $12.95
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    Sager TW-25-12-S-D-256-118 87 1
    • 1 $13.93
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    Powell Electronics TW-25-12-S-D-256-118 57 1
    • 1 $13.93
    • 10 $13.64
    • 100 $10.94
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    Sanken Electric Co Ltd 2SD2560

    Trans Darlington NPN 150V 15A 130000mW 3-Pin(3+Tab) TO-3P
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    Verical () 2SD2560 1,000 34
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    2SD2560 947 1
    • 1 $4.32
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    2SD2560 24 24
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    Arrow Electronics 2SD2560 947 4 Weeks 1
    • 1 $4.32
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    • 100 $4.21
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    Quest Components 2SD2560 819
    • 1 $4.16
    • 10 $4.16
    • 100 $2.57
    • 1000 $2.29
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    Sanken Electric Co Ltd 2SD2561

    Trans Darlington NPN 150V 17A 200000mW 3-Pin MT-200
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    Verical 2SD2561 930 1
    • 1 $4.75
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    Arrow Electronics 2SD2561 930 4 Weeks 1
    • 1 $4.75
    • 10 $4.03
    • 100 $3.51
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    Corsair Electrical Connectors Inc CM72SD256-2100

    PC2100 256MB DDR 32Mx72 184 DIMM unbuffered CAS2.5 16Mx8 DRAMs
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    Neutron USA CM72SD256-2100 1
    • 1 $99.99
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    2SD256 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB1647

    Abstract: 2SD2560
    Contextual Info: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1647 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2560 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


    Original
    2sb16472sd2560-150v-10ma PDF

    2SD2560

    Abstract: 2SB1647 pnp 10A 12v 10a regulator ic
    Contextual Info: Inchange Semiconductor Product Specification 2SB1647 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2560 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original
    2sb16472sd2560-10mapnp 10a+112v 10a regulator ic PDF

    400v 50A Transistor

    Abstract: 2SD2568
    Contextual Info: 2SD2568 Transistors Power Transistor 400V,0.5A 2SD2568 ! Features 1 ) High breakdown voltage.(BVcEo=400V) ! Absolute maximum ratings (Ta = 25°C) P a ra m e te r S ym bol Lim its Unit C o lle c to r-b a s e v o lta g e VcBO 400 V C o lle c to r-e m itte r v o lta g e


    OCR Scan
    2sd2568100mav/50ma-50ma+210mhz400v 50a transistor PDF

    2SD2560

    Abstract: 2SB1647 DSA0016513
    Contextual Info: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) 150min 5000min∗ VCE(sat) IC=10A, IB=10mA 2.5max W VBE(sat) IC=10A, IB=10mA


    Original
    2sd25602sb1647mt-100100max+5150min5000min70typ120typdsa0016513 PDF

    2SD2568

    Contextual Info: 2SD2568 Transistors Power Transistor 400V, 0.5A 2SD2568 zFeatures 1) High breakdown voltage.(BVCEO=400V) zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage Parameter VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage


    Original
    2sd2568 PDF

    2SD2562

    Abstract: 2sb1649
    Contextual Info: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C


    Original
    2sd25622sb1649fm100100max+4150min5000min70typ120typ PDF

    2sb1649

    Abstract: CASET 2SD2561
    Contextual Info: 7 0 Ω E 2SB1649 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) 2SB1649 Unit ICBO VCB=–150V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V °C fT –55 to +150 °C COB Tstg IC=–10A, IB=–10mA –3.0max V VCE=–12V, IE=2A


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    2sb16492sd2561fm100100max+445typ320typ150mincaset PDF

    2SD2568

    Abstract: 2sd25
    Contextual Info: 2SD2568 Transistors Power Transistor 400V,0.5A 2SD2568 !Features 1) High breakdown voltage.(BVCEO=400V) !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage VCBO VCEO Emitter-base voltage Collector current


    Original
    2sd2568100mav/50ma-50ma+210mhz2sd25 PDF

    2SD2560

    Abstract: 2SB1647 2sd25
    Contextual Info: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) Tj 150 –55to+150 °C Tstg IC=30mA 150min VCE=4V, IC=10A 5000min∗ VCE(sat)


    Original
    2sd25602sb1647100max150min+55000min70typ120typmt-1002sd25 PDF

    2sb1648

    Abstract: 2SD2561
    Contextual Info: 7 0Ω E 2SB1648 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Unit –150 V Symbol ICBO VCEO –150 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE IB –1 A VCE(sat) PC 200(Tc=25°C) W VBE(sat) Tj 150 °C fT Tstg –55 to +150 2SB1648


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    2sb16482sd25615000min45typ+4150min100max320typmt-200 PDF

    2sa1012

    Abstract: HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD2562
    Contextual Info: SavantIC Semiconductor Product Specification 2SA1012 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD2562 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING


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    2sa1012o-2202sd2562high voltage high current power pnp transistors PDF

    Contextual Info: Transistor 2SD2565 Silicon NPN triple diffusion planar type Unit: mm For high voltage-withstand switching 6.9±0.1 4.0 2.5±0.1 0.8 • Features 0.65 max. 14.5±0.5 (1.0) • High collector to base voltage VCBO • High collector to emitter voltage VCEO


    Original
    2sd2565 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2565 Silicon NPN triple diffusion planar type For high voltage-withstand switching Unit: mm 6.9±0.1 4.0 • Absolute Maximum Ratings Ta = 25°C 0.45+0.10 –0.05 Parameter Symbol


    Original
    2002/95/ec2sd2565 PDF

    2SD2562

    Abstract: 2SD256 2sb1649
    Contextual Info: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C


    Original
    2sd25622sb1649fm100100max+5150min5000min70typ120typ2sd256 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2565 Silicon NPN triple diffusion planar type For high voltage-withstand switching Unit: mm M Di ain sc te on na tin nc ue e/ d • Absolute Maximum Ratings Ta = 25°C Symbol Rating


    Original
    2002/95/ec2sd2565 PDF

    2SB1647

    Abstract: 2SD2560 2SD256
    Contextual Info: 7 0 Ω E 2SB1647 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) VCB=–150V –100max µA V IEBO VEB=–5V –100max µA V VEBO –5 V V(BR)CEO IC –15 A hFE IC=–30mA –150min VCE=–4V, IC=–10A 5000min∗ A VCE(sat) IC=–10A, IB=–10mA


    Original
    2sb16472sd2560100max5000min+445typ320typ150min2sd256 PDF

    2SB1648

    Abstract: 2SD2561 2sd25
    Contextual Info: C Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1648 ICBO Unit VCB=150V 100max µA µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A 70typ MHz COB


    Original
    2sd25612sb1648100max150min+55000min70typ120typmt-2002sd25 PDF

    Contextual Info: 2SD2568 Transistors Power Transistor 400V,0.5A 2SD2568 !Features 1) High breakdown voltage.(BVCEO=400V) !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage VCBO VCEO Emitter-base voltage Collector current


    Original
    2sd2568 PDF

    2SA1012

    Abstract: 2SD2562 transistors aio 20
    Contextual Info: AOK AOK Semiconductor Product Specification Silicon PNP Pow er T ran sisto rs 2SA1012 DESCRIPTION • With TO-220 package • Complement to type 2SD2562 • Low saturation voltage • High speed switching time APPLICATIONS • High current switching applications


    OCR Scan
    2sa1012t0-2202sd2562transistors aio 20 PDF

    2SB1647

    Abstract: 2SD2560 DARLINGTON 10A
    Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1647 DESCRIPTION •With TO-3PN package ·Complement to type 2SD2560 APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    2sb16472sd2560-150v-10ma+1darlington 10a PDF

    2SD2565

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2565 Silicon NPN triple diffusion planar type For high voltage-withstand switching Unit: mm • Features Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro


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    2002/95/ec2sd2565 PDF

    2sb1649

    Abstract: 2SD2561 DSA0016506
    Contextual Info: 7 0 Ω E 2SB1649 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Ratings Unit ICBO VCB=–150V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V °C fT –55 to +150 °C COB Tstg IC=–10A, IB=–10mA –3.0max V VCE=–12V, IE=2A


    Original
    2sb16492sd2561fm100100max+345typ320typdsa0016506 PDF

    2sb1648

    Abstract: 2SD2561 DSA0016506
    Contextual Info: 7 0Ω E 2SB1648 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Unit –150 V Symbol ICBO VCEO –150 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE IB –1 A VCE(sat) PC 200(Tc=25°C) W VBE(sat) Tj 150 °C fT Tstg –55 to +150 Ratings


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    2sb16482sd2561100max45typ+55000min150min320typmt-200dsa0016506 PDF

    2SD2561

    Abstract: DSA0016513 2sb1648
    Contextual Info: Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1648 ICBO Unit VCB=150V 100max µA 24.4±0.2 100max µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A


    Original
    2sd25612sb1648100max150min+55000min70typ120typmt-200dsa0016513 PDF