2SD256 Search Results

2SB1647

Abstract: 2SD2560
Contextual Info: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1647 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2560 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SD2560

Abstract: 2SB1647 pnp 10A 12v 10a regulator ic
Contextual Info: Inchange Semiconductor Product Specification 2SB1647 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2560 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

400v 50A Transistor

Abstract: 2SD2568
Contextual Info: 2SD2568 Transistors Power Transistor 400V,0.5A 2SD2568 ! Features 1 ) High breakdown voltage.(BVcEo=400V) ! Absolute maximum ratings (Ta = 25°C) P a ra m e te r S ym bol Lim its Unit C o lle c to r-b a s e v o lta g e VcBO 400 V C o lle c to r-e m itte r v o lta g e

2SD2560

Abstract: 2SB1647 DSA0016513
Contextual Info: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) 150min 5000min∗ VCE(sat) IC=10A, IB=10mA 2.5max W VBE(sat) IC=10A, IB=10mA

2SD2568

Contextual Info: 2SD2568 Transistors Power Transistor 400V, 0.5A 2SD2568 zFeatures 1) High breakdown voltage.(BVCEO=400V) zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage Parameter VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage

2SD2562

Abstract: 2sb1649
Contextual Info: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C

2sb1649

Abstract: CASET 2SD2561
Contextual Info: 7 0 Ω E 2SB1649 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) 2SB1649 Unit ICBO VCB=–150V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V °C fT –55 to +150 °C COB Tstg IC=–10A, IB=–10mA –3.0max V VCE=–12V, IE=2A

2SD2568

Abstract: 2sd25
Contextual Info: 2SD2568 Transistors Power Transistor 400V,0.5A 2SD2568 !Features 1) High breakdown voltage.(BVCEO=400V) !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage VCBO VCEO Emitter-base voltage Collector current

2SD2560

Abstract: 2SB1647 2sd25
Contextual Info: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) Tj 150 –55to+150 °C Tstg IC=30mA 150min VCE=4V, IC=10A 5000min∗ VCE(sat)

2sb1648

Abstract: 2SD2561
Contextual Info: 7 0Ω E 2SB1648 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Unit –150 V Symbol ICBO VCEO –150 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE IB –1 A VCE(sat) PC 200(Tc=25°C) W VBE(sat) Tj 150 °C fT Tstg –55 to +150 2SB1648

2sa1012

Abstract: HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD2562
Contextual Info: SavantIC Semiconductor Product Specification 2SA1012 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD2562 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING

Contextual Info: Transistor 2SD2565 Silicon NPN triple diffusion planar type Unit: mm For high voltage-withstand switching 6.9±0.1 4.0 2.5±0.1 0.8 • Features 0.65 max. 14.5±0.5 (1.0) • High collector to base voltage VCBO • High collector to emitter voltage VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2565 Silicon NPN triple diffusion planar type For high voltage-withstand switching Unit: mm 6.9±0.1 4.0 • Absolute Maximum Ratings Ta = 25°C 0.45+0.10 –0.05 Parameter Symbol

2SD2562

Abstract: 2SD256 2sb1649
Contextual Info: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2565 Silicon NPN triple diffusion planar type For high voltage-withstand switching Unit: mm M Di ain sc te on na tin nc ue e/ d • Absolute Maximum Ratings Ta = 25°C Symbol Rating

2SB1647

Abstract: 2SD2560 2SD256
Contextual Info: 7 0 Ω E 2SB1647 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) VCB=–150V –100max µA V IEBO VEB=–5V –100max µA V VEBO –5 V V(BR)CEO IC –15 A hFE IC=–30mA –150min VCE=–4V, IC=–10A 5000min∗ A VCE(sat) IC=–10A, IB=–10mA

2SB1648

Abstract: 2SD2561 2sd25
Contextual Info: C Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1648 ICBO Unit VCB=150V 100max µA µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A 70typ MHz COB

Contextual Info: 2SD2568 Transistors Power Transistor 400V,0.5A 2SD2568 !Features 1) High breakdown voltage.(BVCEO=400V) !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage VCBO VCEO Emitter-base voltage Collector current

2SA1012

Abstract: 2SD2562 transistors aio 20
Contextual Info: AOK AOK Semiconductor Product Specification Silicon PNP Pow er T ran sisto rs 2SA1012 DESCRIPTION • With TO-220 package • Complement to type 2SD2562 • Low saturation voltage • High speed switching time APPLICATIONS • High current switching applications

2SB1647

Abstract: 2SD2560 DARLINGTON 10A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1647 DESCRIPTION •With TO-3PN package ·Complement to type 2SD2560 APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SD2565

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2565 Silicon NPN triple diffusion planar type For high voltage-withstand switching Unit: mm • Features Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro

2sb1649

Abstract: 2SD2561 DSA0016506
Contextual Info: 7 0 Ω E 2SB1649 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Ratings Unit ICBO VCB=–150V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V °C fT –55 to +150 °C COB Tstg IC=–10A, IB=–10mA –3.0max V VCE=–12V, IE=2A

2sb1648

Abstract: 2SD2561 DSA0016506
Contextual Info: 7 0Ω E 2SB1648 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Unit –150 V Symbol ICBO VCEO –150 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE IB –1 A VCE(sat) PC 200(Tc=25°C) W VBE(sat) Tj 150 °C fT Tstg –55 to +150 Ratings

2SD2561

Abstract: DSA0016513 2sb1648
Contextual Info: Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1648 ICBO Unit VCB=150V 100max µA 24.4±0.2 100max µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A