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    2n5839 Datasheets

    2n5839 datasheet (35)

    Part ECAD Model Manufacturer Description Type PDF
    2N5839 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=300 / Ic=3 / Hfe=10-50 / fT(Hz)=5M / Pwr(W)=57 Original PDF
    2N5839 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5839 API Electronics Short form transistor data Scan PDF
    2N5839 API Electronics TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-39 Scan PDF
    2N5839 Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF
    2N5839 Diode Transistor Silicon Transistors Scan PDF
    2N5839 Diode Transistor Transistor Short Form Data Scan PDF
    2N5839 Diode Transistor Transistor Short Form Data - TO-3 Scan PDF
    2N5839 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5839 General Electric High-voltage, high-power silicon N-P-N power transistor. - Pol=NPN / Pkg=TO3 / Vceo=300 / Ic=3 / Hfe=10-50 / fT(Hz)=5M / Pwr(W)=57 Scan PDF
    2N5839 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5839 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5839 Unknown Shortform Electronic Component Datasheets Scan PDF
    2N5839 Unknown Shortform Transistor Datasheet Guide Scan PDF
    2N5839 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    2N5839 Unknown Shortform Data and Cross References (Misc Datasheets) Scan PDF
    2N5839 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
    2N5839 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5839 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5839 Unknown Shortform Transistor PDF Datasheet Scan PDF
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    2n5839 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5838

    Abstract: 2N5839 2N5840
    Text: Inchange Semiconductor Product Specification 2N5838 2N5839 2N5840 Silicon NPN Power , OND IC 2N5838 Collector-base voltage SEM E 2N5839 ANG INCH Collector-emitter voltage Open emitter 2N5840 2N5838 2N5839 Open base 2N5840 VEBO Emitter-base voltage , Product Specification 2N5838 2N5839 2N5840 Silicon NPN Power Transistors CHARACTERISTICS Tj , sustaining voltage 2N5839 MIN TYP. MAX UNIT 250 IC=0.1A ;IB=0 V 275 2N5840 350


    Original     		PDF 2N5838 2N5839 2N5840 2N5838 2N5839 2N5839/5840 2N5840

    2N5838

    Abstract: 2N5840 2N5839
    Text: SavantIC Semiconductor Product Specification 2N5838 2N5839 2N5840 Silicon NPN Power , 2N5839 VALUE 275 Open emitter 300 2N5840 Collector-emitter voltage 250 2N5839 , SavantIC Semiconductor Product Specification 2N5838 2N5839 2N5840 Silicon NPN Power Transistors , ) Collector-emitter sustaining voltage 2N5839 MIN TYP. MAX UNIT 250 IC=0.1A ;IB=0 V 275 350 , 2N5839 /5840 hFE IC=3A ; VCE=3V IC=2A ; VCE=3V 10 50 IC=1A ; VCE=10V;f=1.0MHz 5 DC


    Original     		PDF 2N5838 2N5839 2N5840 2N5838 2N5839 2N5840

    7420A

    Abstract: 7.5b 35 2N5840 2N5839
    Text: File Number 410 2N5838, 2N5839 , 2N5840 High-Voltage, High-Power Silicon N-P-N Power , 375 V [2N5840] 300 V [ 2N5839 ] 275 V [2N5838] High dissipation rating Pt = 100 W The 2N5838, 2N5839 , breakdown voltage ratings and low-saturatlon voltage values, the 2N5838, 2N5839 and 2N5840 are especially , resistance ( R Be ) ^ 50 O, V Ce r ( s u s ) 275 250 275 275 6 3 5 1.5 2N5839 300 275 300 300 6 3 5 1.5 , 2N5838, 2N5839 , 2N5840 T e s t Co n d iti o n s Lim its DC Cu r re n t (A) Type 2N5 83B Type 2N 58 3 9


    OCR Scan     		PDF 2N5838, 2N5839, 2N5840 2N5840] 2N5839] 2N5838] 2N5839 2N5840* T0-204A 7420A 7.5b 35 2N5840

    TA7420

    Abstract: TA7530 TA7513 2N5840 2NS83 Tektronix P6019 2N5839 2N5838 equivalent 2n5840
    Text: . point "B" for type 2N5839. and point "C" for type 2NSS40. Fig. 15 — Oscilloscope display for , , 2N5839 , 2N5840 File Number 410 High-Voltage, High-Power Silicon N-P-N Power Transistors For Switching , [ 2N5839 ] 275 V [2NS838] ■High dissipation rating PT = 100 IV TERMINAL DESIGNATIONS c e^ _ (flange; Ol Q 92CS-27S16 JEDEC TO-2Q4AA RCA-2N5838, 2N5839 and 2N5840" are epitaxial silicon n-p-n power , , the 2N5838, 2N5839 and 2N5840 are especially suitable for use in inverters, deflection circuits


    OCR Scan     		PDF 2N5838, 2N5839, 2N5840 2N5840] 2N5839] 2NS838] 92CS-27S16 RCA-2N5838, 2N5839 2N5840" TA7420 TA7530 TA7513 2NS83 Tektronix P6019 2N5838 equivalent 2n5840

    TA7420

    Abstract: 2N5840 2N5839
    Text: , 2N5839 , 2N5840 High-Voltage, High-Power Silicon N-P-N Power Transistors For Switching and Linear , ) 275 250 275 275 2N5839 300 275 300 300 2N5840 375 350 375 375 6 V V V V A A A 6 , . 230 . 2-59 POWER TRANSISTORS The 2NS838, 2N5839 and 2N5840* are epitaxial silicon n-p-n , voltage values, the 2N5838, 2N5839 and 2N5840 are especially suitable for use in inverters, deflection , switching appli cations. TERMINAL DESIGNATIONS (FLANGE) HARRIS SEMICOND SECTOR 2N5838, 2N5839


    OCR Scan     		PDF 2N5838, 2N5839, 2N5840 2N5840] 2W5839] 2N5838] TA7513, TA7530, TA7420A, O-204AA TA7420 2N5840 2N5839

    2005 - 2N5838

    Abstract: 2N5839 2N5840
    Text: Product Specification www.jmnic.com 2N5838 2N5839 2N5840 Silicon NPN Power Transistors , ratings(Ta=) SYMBOL PARAMETER CONDITIONS 2N5838 VCBO Collector-base voltage 2N5839 VALUE 275 Open emitter 300 2N5840 Collector-emitter voltage 250 2N5839 Open base , case JMnic Product Specification www.jmnic.com 2N5838 2N5839 2N5840 Silicon NPN Power , VCEO Collector-emitter sustaining voltage 2N5839 MIN TYP. MAX UNIT 250 IC


    Original     		PDF 2N5838 2N5839 2N5840 2N5838 2N5839 2N5840

    2N5840

    Abstract: 2N5838 2N5839 t508 2N5833
    Text: POWER TRANSISTORS 3A, 375V Silicon NPN Mesa 2N5838 2N5839 2 N5840 DESCRIPTION These high , "C (or 10 seconds. 2N5838 2N5839 2N5840 ins. mm. A .875 MAX. 22.23 MAX. B .135 MAX 3.43 MAX C , 2N5839 2N5840 ELECTRICAL SPECIFICATIONS (at 25°C unless noted) Test Symbol 2N. MIN. >838 MAX. 2N! MIN , €¢ TEL. (617) 861-6540 TWX (710) 326-6509 • TELEX 95-1064 102 PRINTED IN U.S.A. 2N5838 2N5839 2N5840 , €¢ TELEX 95-1064 1 03 PRINTED IN U.S.A. 2N5838 2N5839 2N5840 Resistive - Turn-On Time 1000 500 w 100 Â


    OCR Scan     		PDF 2N5838 2N5839 N5840 2NS838 2N5840 2N5840 t508 2N5833

    2N3902

    Abstract: 2N4347 2N5157 2N5239 2N5240 2N5466 2N5467 2N5685 2N5686 2N6511
    Text: 275 250* 265 5.0 20 .50 1.0 2.0 3.0 150 4.0 TO-3 2N5839 2N5839 100 300 275*' 290 2.0 20 .50 1.5 2.0


    OCR Scan     		PDF A13L45B o413LS^ 2N3902 2N4347 2N5157 2N5239 2N5240 2N5466 2N5467 2N5685 2N5686 2N6511

    2002 - 2N5839

    Abstract: No abstract text available
    Text: 2N5839 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = 300V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 3A 7.92 (0.312) 12.70 (0.50) All Semelab


    Original     		PDF 2N5839 O204AA) 31-Jul-02 2N5839

    1431T

    Abstract: BU106 2N6306 2N6307 2N6308 2N6510 BUX17 BUX17A BUX18 BUX18A
    Text: -175V hFE = 20 min @4A ts = 3.5 fjs tf = 1 Pi bu120 VCEO(sus) = 200V h >30-100 @ 1A 2n5839 FE - 20 mir , ,cer-pa I TO-39 2N TYPES 2N5838 2N5839 2N5840 AUDIO TYPES 41016 Output, 70-W Amplifier 2N5840


    OCR Scan     		PDF lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 1431T BU106 2N6306 2N6307 2N6308 2N6510 BUX17 BUX17A BUX18 BUX18A

    2002 - 2N5839

    Abstract: No abstract text available
    Text: 2N5839 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 300V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 3A All Semelab hermetically sealed products can


    Original     		PDF 2N5839 O204AA) 16-Jul-02 2N5839

    2N4211

    Abstract: 2N1514 2N2753 2n3054 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228
    Text: 2N5838 35 1776-1840 2N2583 2N2821 2N3585 2N5839 36 1776-1860 2N2585 2N2822 2N3597


    Original     		PDF 2N1015 2N2015 2N2739 2N3743 2N4002 2N6046 2N1015A 2N2016 2N2740 2N3771 2N4211 2N1514 2N2753 2n3054 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228

    2N5730

    Abstract: 2N5729 2N5731 2N5732 2N5733 2N5734 2N5758 2N5759 2N5760 2N5784
    Text: 2N5805 TO-3 375 300 6 4 5 10 100 5 0.5 2 2 2N5838 TO-3 275 250 6 2 3 8 40 3 0.375 1 2 2N5839 TO-3 300


    OCR Scan     		PDF 2N5729 2N5730 O-59/I 2N5731 O-61/I 2N5732 2N5733 2N5734 2N5758 2N5759 2N5760 2N5784

    MJ1800

    Abstract: 12HF 2N5839 motorola 352 transistor
    Text: M O T O R O L A SC { D I O D E S / O P T O } 34 Dlf| L.3L.75SS D D 3 7 ` ìS4 1 |~ 6367255 MOTOROLA SC (DIODES/OPTO) 34C 37954 D SILICON POWER TRANSISTOR DICE (continued) d ie n o . LINE SOURCE - PL500.352 This die provides performance equal to or better than that of the following device types: 2N5838 2N5839 2NS840 2N6542 2N6543 MJ1800 MJ3260 MJ4400 MJ4401 MJE3520 2C6543 & Designed for highvoltage, high-speed, and power switching applications. f £


    OCR Scan     		PDF PL500 2N5838 2N5839 2NS840 2N6542 2N6543 MJ1800 MJ3260 MJ4400 MJ4401 12HF motorola 352 transistor

    2N5730

    Abstract: 2N5760 ppc products to-3 2N5729 2N5731 2N5732 2N5733 2N5734 2N5758 2N5759
    Text: 0.5 2N5838 TO-3 275 250 40 0.375 2N5839 TO-3 300 275 10 50 0.2 1.5 2N5840 TO-3 375


    OCR Scan     		PDF 2N5729 2N5730 O-59/I 2N5731 O-61/1 2N5732 2N5733 2N5734 2N5758 2N5759 2N5730 2N5760 ppc products to-3 2N5729 2N5731 2N5732 2N5733 2N5734 2N5758 2N5759

    1431T

    Abstract: BU106 BUX18 2n2102 replacement 2N3440 2N5416 REPLACEMENT 2N6306 2N6307 2N6308 2N6510 BUX17
    Text: -175V hFE = 20 min @4A ts = 3.5 fjs tf = 1 Pi bu120 VCEO(sus) = 200V h >30-100 @ 1A 2n5839 FE - 20 mir , TO-39 2N TYPES 2N5838 2N5839 2N5840 AUDIO TYPES 41016 Output, 70-W Amplifier 2N5840 FAMILY


    OCR Scan     		PDF lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 1431T BU106 BUX18 2n2102 replacement 2N3440 2N5416 REPLACEMENT 2N6306 2N6307 2N6308 2N6510 BUX17

    2002 - Not Available

    Abstract: No abstract text available
    Text: 2N5839 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 300V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 3A All Semelab hermetically sealed products can


    Original     		PDF 2N5839 O204AA) 18-Jun-02

    BD221

    Abstract: MPS-U07F mpsu07f 2N5320 2N5322 FTD5320 FTD5322 MPS-U06F MPS-U56F TIP110
    Text: 3.0 5.0 100 TO-3 21 2N5839 275 10/50 2.0 1.5 2.0 5.0 100 TO-3 22 FT402 325 20/100 0.5 2.0 3.0 2.0


    OCR Scan     		PDF TIP110* TIP115* T0-220 2N5320 2N5322 FTD5320 FTD5322 MPS-U06F MPS-U56F TIP111* BD221 MPS-U07F mpsu07f TIP110

    2N2580

    Abstract: 2N3080
    Text: TRANSISTORS PT TYPE NO 2N5838 2N5839 MAXIMUM RATINCS @ 25-C B V cbo B V ceo B V ebo Ic V V Watts A V 100 100


    OCR Scan     		PDF 2N2580 2N2580M 2N2581 2N2582 2N2583 2N3079 2N3080 2N5838 2N5839 2N5840

    2N5004

    Abstract: 2N3026 2N3025 2N5002 2N5074 2N5075 2N5076 2N5077 2N5148 2N5150
    Text: 2 3 1 2 3 .375 1. 75 5 2N5839 TO-3 300 275 6 10 50 3 2 1.5 2 2 .2 1. 75 5 2N5840 TO-3 375 350 6 10


    OCR Scan     		PDF 2N5002 2N5004 2N5074 2N5075 2N5076 2N5077 2N5148 2N5150 2N3021 2N3022 2N3026 2N3025

    JANTX2N5157

    Abstract: 2N3445
    Text: 2N5838 2N5839 2N5840 JANTXV2N3902 2N3902 JAN2N3902 JANTX2N3902 2N5157 JAN2N5157 JANTX2N5157 JANTXV2N5157


    OCR Scan     		PDF NPN-17 JANTX2N5157 2N3445

    2N3440 2N5416 REPLACEMENT

    Abstract: TRANSISTOR REPLACEMENT FOR 2N3053 40620 transistor 2n6308 TRANSISTOR REPLACEMENT Replacement for 2N5322 transistor 2n2102 replacement 300W TRANSISTOR AUDIO AMPLIFIER 2N4036 replacement Transistor PJ 431 40872
    Text: -175V hFE = 20 min @4A ts = 3.5 fjs tf = 1 Pi bu120 VCEO(sus) = 200V h >30-100 @ 1A 2n5839 FE - 20 mir , -W Audio Ampli. 32 - - 20-100 1.5 1 1a - 25 a,cer-pa I TO-39 2N TYPES 2N5838 2N5839 2N5840 AUDIO


    OCR Scan     		PDF lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 2N3440 2N5416 REPLACEMENT TRANSISTOR REPLACEMENT FOR 2N3053 40620 transistor 2n6308 TRANSISTOR REPLACEMENT Replacement for 2N5322 transistor 2n2102 replacement 300W TRANSISTOR AUDIO AMPLIFIER 2N4036 replacement Transistor PJ 431 40872

    Not Available

    Abstract: No abstract text available
    Text: NO. 2N5838 2N5839 @ 25°C Watts 100 100 100 80 80 125 125 125 125 125 125 MAXIMUM RATINGS B V c b o B


    OCR Scan     		PDF 2N2580 2N2580M 2N2581 2N2582 2N2583 2N3079 N3080 2N5838 2N5839 2N5840

    2N6514

    Abstract: 40852 BU106 BUX18 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251
    Text: -175V hFE = 20 min @4A ts = 3.5 fjs tf = 1 Pi BU120 VCEO(sus) = 200V h >30-100 @ 1A 2N5839 FE - 20 mir


    OCR Scan     		PDF lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 2N6514 40852 BU106 BUX18 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251

    40852

    Abstract: 1431t 70w amplifier 40615 2N5840 2N5954 2N5956 2N5786 2N5838 2N5839
    Text: 40610 40615 40620 2N5786 FAMILY [n-p-n] (silicon) [cont'd] fj = 1 MHz min; Pj = 10 W max DfcSCRIPTION hFE lCER-mA VC fE 2N5839 2N5840 AUDIO


    OCR Scan     		PDF 2N5786 2N5838 2N5839 2N5840 2N5840 2N5956 2N5955 2N5954 40852 1431t 70w amplifier 40615

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