2N5783 Search Results

TA7290

Abstract: 2N5784 equivalent TA7270 TA7272 2N5783 2N5781 92SS-4J32 2N5782 Tektronix 2712 2N5783 HARRIS
Contextual Info: H A RR IS S E M I C O N D S E C T O R 5bE D • 4 3 G 2 2 7 1 0 0 4 0 4 7 0 T46 H H A S 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 Rie Number 413 n = 3 3 -o / Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry T ransistors General-Purpose Types for Switching and

C2688

Abstract: TA7270 TA7290 2n5784 pnp transistor 2N5784 2N5783 2n5783 rca RCA-2N5781 2n5782 RCA tRANSISTOR c2688
Contextual Info: Öl E SOLI» STATE 387 508 1 G E SOLID STATE General-Purpose Power Transistors ' DE | 3fl750öl □□173Tb □ X " 01E 17396 " D T ' ?S '- f f " T ' 2 T * ' 1 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786

Contextual Info: 2N5783 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N5783 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021)

TA7290

Abstract: 2N5781 TA7272 2N5784 equivalent 2N5783
Contextual Info: 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 File Number 413 Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry T ransistors General-Purpose Types for Switching and Linear-Amplifier Applications Features: • ■ • ■ Low saturation voltages

Contextual Info: m 2N5783 \ \ SILICON PNP TRANSISTOR DESCRIPTION: The 2N5783 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 3.5 A Ib 1.0 A V -40 V ce P diss 10 W @ T C = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 17.5 °C/W

2n5786

Abstract: 2N5783
Contextual Info: 2N5783 PNP 2N5786 NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5783 and 2N5786 types are Complementary Silicon Power Transistors designed for general purpose switching and amplifier applications.

2n5872

Contextual Info: •4ö E Ö1331Ö7 » 0D0GM41 SEMELABE ISNLB M^b SEMELAB L T T>r-zr-ei BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rei Code 2N5741 2N5742 2N5743 2N5744 2N5745 2N5781 2N5782 2N5783 2N5784 2N5785 2N5786 2N5793 2N5794 2N5804 2N5805 2M5838 2N5839 2N5840

2N5783

Contextual Info: 2N5783 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021)

2N6181

Abstract: 2N3055 2n3055 complement 40852 2N3054 2N5293 2N5294 2N5495 2N5783 2N5786
Contextual Info: COMPLEMENTARY-PAIR POWER TYPES Hometaxial-Base/Epitaxial-Base 1.5 o 2 A \r = 2 .5 A U P-N-P N-P-N l„ 3 t o 3.5 A N-P-N P-N-P N-P-N P-N-P N-P-N L 4 to 6 A w L 121 o 17 A N-P-N * P-N-P P-N-P 2N5293 2N5294 2N6106 2N6107 2N5786 2N5783 2N3054 2N5955 2N5495 2N5494

AP1104

Abstract: 2N3054 2N3054A 2N4877 2N5320 2N5321 2N5781 2N5783 2N6261 2N6263
Contextual Info: A P I ELECTRONICS INC - ~5b D E ^ O D M B S T E □□QGEHO h \ ^ “fZ £ 3 ^ 0 ! COLLECTOR CURRENT = 3 . 5 AMPS PNP TYPES Device No C ase VCBO Volts 2N5781 2N5783 TO -5 TO -5 80 45 VCEO sus Volts 65 40 vebo Volts 5 3. 5 hFE Min Max 20 20 100 100 VCE 2

LC32A

Abstract: 2N5783 2N5786
Contextual Info: Datasheet AU_ 2N5783 2N5786 m TM C e nItw MMil III PNP NPN COM PLEM ENTARY SILICON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors

2N5783

Contextual Info: ÀSII 2N5783 SILICON PNP TRANSISTOR DESCRIPTION: The 2N5783 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS IC 3.5 A ib 1.0 A <C E -40 V p d iss 10 W @ Te $ 25 0C Tj -65 0C to +200 0C Ts t g -65 0C to +200 0C

2n3054a

Contextual Info: A P I ELECTRONICS INC - “ 2b D e "1 0G4351E □□□0320 b \ “fZ£3~ùl COLLECTOR CURRENT = 3. 5 AMPS PNP TYPES Device No 2N5781 2N5783 Case TO-5 TO-5 VCBO VCEO sus Volts Volts 80 65 40 45 vebo Volts 5 3.5 hFE Min Max 20 100 20 100 VCE 2 2 ic Vc e (sat)

2N5680

Abstract: 2N5867
Contextual Info: PNP S A T V O L T A G E S M a x . m BREAKDO W N VO LTAG ES Tl • PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST !c 'c C ASE V CB V CE V EB V CE (V) (A) M in. M ax. (A) !b (A) V CE (V) V BE (V) 2N5613 TO-3 80 60 5.5 5 2.5 70 200 2.5 0.5 1.5 2 2N 5615

BD243

Abstract: 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372 2N6472 2N6488 2N6491
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

2N5189

Abstract: 2N4930 2N4931 2N4943 2N4960 2N5022 2N5023 2N5058 2N5059 2N5109
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) toff (ns) (dB) *TYP *TYP *TYP *TYP *TYP MAX *ICEO *ICES *ICEV

radiator 0,019

Abstract: 2n5578
Contextual Info: •■i ■1 Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d hFE \ / a w~ (CMC1 CEO V CEX V VcE^^- V 'C E X -m A ' ‘c A V CE V Tem p.—°C 25 V CE V •c A 2N5578 FAMILY (n-p-n) High Current, High Power f y = 0.4 MHz min; P y = 300 W max

2N6103

Abstract: 300W TRANSISTOR AUDIO AMPLIFIER 40594 Complementary Darlington Audio Power Amplifier 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT

2N5415

Abstract: 2N3055 RCA 2N3054 transistor BUX66C rca 2n3055 RCA 40250 2N3439 2N3440 rca transistor 508 2N6079
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . . f r to 2 0 M H z . . . P y to 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N]

2N6178

Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053

40632

Abstract: 300W TRANSISTOR AUDIO AMPLIFIER npn 40872 40636 40872 transistor TA8326 120w audio power amplifier 2n3055 audio output circuit 2N5415 2N6320
Contextual Info: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6 .5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386

2N6491 SWITCH

Abstract: 2N6489 SWITCH 4-0992 ta8662 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT