C2688
Abstract: TA7270 TA7290 2n5784 pnp transistor 2N5784 2N5783 2n5783 rca RCA-2N5781 2n5782 RCA tRANSISTOR c2688
Contextual Info: Öl E SOLI» STATE 387 508 1 G E SOLID STATE General-Purpose Power Transistors ' DE | 3fl750öl □□173Tb □ X " 01E 17396 " D T ' ?S '- f f " T ' 2 T * ' 1 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786
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3a7502n57812n57822n5783+112n57842n57852n5786rca-2n5781c2688ta7270ta72902n5784 pnp transistor2n5783 rca2n5782 rcatransistor c2688
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CS05S
Contextual Info: G E SOLID S TA TE 01 D E|3fl75001 0011710 Optoelectronic Specifications T -V /-7 3 1mm Aperture Photon Coupled Interrupter Module H22A1,H22A2,H22A3 T h e G E Solid S tate H 22A Interru p ter M odule is a gallium arse nide infrared em itting diode coupled to a silicon p h o totransistor in
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3fl75001h22a1h22a2h22a3+1cs05s
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4n4001
Abstract: I4N4
Contextual Info: G E SOLID 01 STATE DE~J 3fl750fll DDlltflS 0 optoelectronic specification« 7 W / - Î7 “ ’ MILLIMETERS SVM0OI T T nT T m a k . 8 3B Bag A 7.62 REF. B _ 8 64 C .406 .606 E 6 03 t.Ol 1.78 2 26 G 2.60 2.16 H ,203 306 2.64 K M 16 .381 N P 6.63 ft 2.92 3.43
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TRANSISTOR 2n697
Abstract: RCA-2N697 2N697 Transistor Data chart QQ170 25C06
Contextual Info: G E SOLID STATE 38 750 81 01 G E SOLID STATE DeT J 3fl750fll 0 0 1 7 0 5 4 3 0 1E 17084 D T -}$ r-l'7 High-Speed Power Transistors_ File Num ber 2N697 16 TERMINAL DESIGNATIONS Silicon N-P-N Planar Transistor For High-Speed Switching Service in Electronic Data-Processing Systems
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2n697qq170a4o-205adrca-2n697+530011stransistor 2n697transistor data chartqq17025c06
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Silicon unilateral switch
Abstract: DG1U SUS GE 2N4987 2N4987 equivalent 2N4987 GE 2N4988 2n498 2N4988 soli capacitors
Contextual Info: "ÏÏÏ G E SOLID STATE DE|3fl750fll DGlflDll 3 | 0 1E 18011 387 5 08 1 G E S O L I D ST A T E D Unijunction Transistors and Switches 2N4987, 2N4988, 2N4989, 2N4990 T 'Z S -c ^ Silicon Unilateral Switch Applications: • SCR Triggers ■ Frequency Drivers
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3fl750fll2n49872n49882n4989+112n49902n4987-9019--overvoltage3s750s1silicon unilateral switchdg1usus ge 2n49872n4987 equivalentge 2n49882n498soli capacitors
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175C
Abstract: BUX10A RCA-BUX10A transistor hh 06
Contextual Info: DI G E SOLI» STATE 387 5081 G E SOLID STATE DÈn|3fl750fll 0017515 0 | ~ ~ 0 T e '~17592 '~ ’ "0 ~ ? > - 7 .J -— ' File Number Kro tieciron t-ower Transistors 1216 High-Current, High-Power
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750aio-204aarca-bux10at0-204aa+791cs-ihs2r192c3-iz441r13fl750flld017stsbux10a175ctransistor hh 06
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RCA-2N6249
Abstract: 2n62501 2N6250 2N6251 clare mercury relay HGP-I004 2N6249 solid state relay 220V 220V 30A Relay i947
Contextual Info: 3875081 G E SOLID STATE □ 1 DE I 3fl750fll OOlTlfiT L. High-Voltage Power Transistors File Number 523 2N6249, 2N6250, 2N6251 450-V, 30-A, 175-W Silicon N-P-N Switching Transistors F or S w itc h in g A p p lic a tio n s in Ind ustrial and C o m m e rc ia l E q u ip m e n t
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3fl750fll1710e2n62492n6250+82n6251rca-2n62492n62501clare mercury relayhgp-i004solid state relay 220v220v 30a relayi947
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13001 TRANSISTOR
Abstract: CNY30 CNY30-CNY34 GE SCR 1000 1000C AN006 CNY34 INS080I4
Contextual Info: G E SOLI» STATE 01 Optoelectronic Specifications DE|3fl750fll OanflBG 0 | T ^ h 3-7 Photon Coupled Isolator CNY30-CNY34 Ga As Infrared Emitting Diode & light Activated SCR The GE Solid State CNY30 and CNY34 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con
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3fl750t-v/-77cny30-cny34cny30+7cny34220vac13001 transistorge scr 10001000can006ins080i4
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CDP1804
Abstract: CDP6805
Contextual Info: G E SOLID STATE D l D E I 3fl750fll O P l b b ? 1! fi _ :_ CDP68HC68R1, CDP68HC68R2 CMOS 128-Word CDP68HC68R1 and 'rWi>‘ 35 256-Word (CDP68HC68R2) by 8-Bit Static RAMs Product Preview TO P Random-Access Memories (RAMs) -
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3fl750fllcdp68hc68r1cdp68hc68r2128-word+4256-word92cs-37865cdp1804cdp6805
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ITE4391
Contextual Info: DI E SOLI» STATE DE 3fl750fll DD1D17S 1 | 3875081 G E SOLID STATE 2 N 4 3 9 1 -2 N 4 3 9 3 , IT E 4 3 9 1 -IT E 4 3 9 3 G 01E 10978 D 2N4391 - 2N 4393, ITE4391- ITE4393 & N-Channel JFET Switch FEATURES ABSOLUTE MAXIMUM RATINGS • rd5(on <300 Ohms (2N4391)
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4541B
Contextual Info: G E SOLID STATE 01 •3 D Ë | 3fl750ûl 0013400 S 3875081 G E SOLID STATE 01E 13408 D T-zt-n CD4541B Types CMOS Programmable Timer A -Í2 - High-Voltage Types 20-Volt Rating B Rtc ~ 7 CTC Features: ■ Low symmetrical output resistance, typically 100CI at
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3fl750cd4541b20-volt100ci+3rca-cd4541b16stage4541b
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4011-S
Contextual Info: G E SOLID STATE 01 m T | 3fl750fll D01 401 1 S | f- ï - 0 ? - 0 ï Data Conversion C ir c u its CA3338 CMOS High-Speed R-2R D/A Converter Product Preview Features: • ■ ■ ■ ■ ■ ■
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CA747CE
Abstract: CA747E CA741 LM741 null adjustment LM748 10-kilohm RCA-CA1458 CA741CA 942e CA1458
Contextual Info: G E SOLID STATE DI 3875081 G E SOLID STATE D E :J 3fl750fll 0Dmi7t, M 01E 14176 D uperanonai Amplifiers CA741, CA747, CA748, CA1458, CA1558, LM741*, LM748*, LM1458*, LM1558* - 7 P - O 5 - J - 0 Operational Amplifiers H ig h -G ain Sing le and Dual O perational Am plifiers
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ca741ca747ca748ca1458+12ca1558lm741lm748lm1458lm1558rca-ca1458ca747ceca747elm741 null adjustment10-kilohmca741ca942e
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CA3055
Abstract: RCA 7946 i8096
Contextual Info: G E SOLI» STATE Power Control Circuits 01 DE|3fl750fll -. QD14S37 ._ ._ _ — CA3085, CA3085A, CA3085B 5 2 -1 /-Z Z Positive Voltage Regulators For Regulated Voltages from 1.7 V to 46 V at Currents up to 100m A Features
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3fl750fllqd14s37ca3085ca3085a+6ca3085b18--typicalrca-2n3772ca3055rca 7946i8096
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74hct922
Abstract: 74HCT32G 54hct32
Contextual Info: T G E SOLI» STATE 01 d F | 3fl750fll 0011403 1 Technical D a ta _ T-43-21 CD54/74HC32 CD54/74HCT32 F ile N u m b e r 1643 High-Speed CMOS Logic Quad 2-Input OR Gate Type Features: • Typical propagation delay - 7 ns @ V co = S V, C l = 15 pF,
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cd54/74hc32cd54/74hct323fl750fllt-43-21+7rca-cd54/74hc32cd54hc/hct3214-leadcd74hc/hct3274hct92274hct32g54hct32
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H11AV1A
Abstract: H11AV1 H11AV2 H11AV3 H11AV2A H11AV3A 0730-2P
Contextual Info: G E SOLID STATE 01 DE|3fl750fll 0an70fa O p to e le c tr o n ic s p e c ific a tio n s . Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State HllAV series consists of a gallium arsenide, infrared
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GES5307
Abstract: 2n5307 2N5308 2N5308A GES5308 GES5308A
Contextual Info: ~q £ SOLID STATE 01 DE 1 3fl750âl 0017^51 S | 3875081 G E SOLID STATE 01E 17951 D Signal Transistors 2N5307, 8, 8A, GES5307, 8, 8A -p z i Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5307, 08, 08A and GES5307, 8, and 8A are planar, epitaxial, passivated NPN silicon Darlington transis
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S6431m
Abstract: RCA-S6493M S6493M
Contextual Info: G E SOLI» STATE Dl 3875081 G E SOLID STATE S ilicon C ontrolled Rectifiers DE I 3fl750öl DD1774E M 01E 17742 D S6493M File Number Silicon Controlled Rectifier For High-Current Pulse Applications
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2C337
Abstract: 92C5-37555 RFL2N05 RFL2N06 RFP4N05 RFP4N06
Contextual Info: 01 3fl750fll 0010113 □ 3 8 7 5 0 8 1 G E S O L ID STATE Standard Power MOSFETs - 01E 18113 RFL2N05, RFL2N06, RFP4N05, RFP4N06 File Number 1497 N-Channel Enhancement-Mode Power Field-Effect Transistors 2 and 4 Amperes, 50 V - 60 V rDs on = 0.60 and 0.750
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3fl750fllrfl2n05rfl2n06rfp4n05+4rfp4n069zcs-337412c33792c5-37555
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cqx 87
Abstract: CQX14 CQX15 CQX16 CQX17 "GE Solid state" CQX 13
Contextual Info: G E SOLID STATE 01 DE 3fl750fll Qdllülb t. I Optoelectronic Specifications T 'H /gS — Infrared Emitter CQX14, CQX15, CQX16, CQX17 Gallium Arsenide Infrared-Emitting Diode The GE Solid State CQX14-CQXI5-CQX16-CQXI7 series are gallium arsenide, light emitting diodes which emit non-coherent, infrared energy with a peak wave
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3fl750fllcqx14cqx15cqx16+9cqx17cqx14-cqx15-cqx16-cqx17of940ato-18-000mm778mmcqx 87ge solid statecqx 13
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BUY69A
Abstract: RCA-BUY69 BUY69 BUY69B BUY69C SOLID STATE TRANSISTORS C633H
Contextual Info: E SOLID STATE" ~0l 3875081 G E SOLID STATE 5T~|3fl750fll D017faBfi fa J - 01E 17628 D Y -Ï3-C Z Pro Electron Power Transistors File Num ber 1237 BUY69A, BUY69B, BUY69C H ig h V o lta g e S ilic o n N - P - N * P o w e r T ra n s is to rs terminal designations
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buy69abuy69bbuy69c00-1000v+7o-204aarca-buy69mcs-31034dd17b31buy69solid state transistorsc633h
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G10 zener diode
Abstract: "RCA Solid State thyristor SGT03U13 SGT06U13 SGT23U13 Surgector dw0t
Contextual Info: G E SOLI» STATE Gl 3875081 G E SOLID STATE ’" D e | 3fl750àl0Q17fa34 ' 0 ÏÊT 17634 T -K '1 3 ' D - S U R G E C T O R s
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e17634sgt03u13sgt06u13sgt23u13+7o-20292cs-387793fl750fllg10 zener dioderca solid state thyristorsurgectordw0t
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lt 6249
Abstract: Lt 6251
Contextual Info: 3875081 G E SOLID STATE □ 1 DE |3fl750fll 0 0 1 7 I M t> | High-Voltage Power Transistors File Number 523 2N6249, 2N6250, 2N6251 450-V, 30-A, 175-W Silicon N-P-N Switching Transistors For S w itchin g A p plications in Industrial and C o m m ercial Equipm ent
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3fl750fll2n62492n62502n6251+2lt 6249lt 6251
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2N4990
Abstract: 2N4987 SUS 2N4987 SUS GE 2N4987 2N4989 2N4988 Silicon unilateral switch 42322 DETJ3075001 2N4987-90
Contextual Info: G E SOLID STATE □1 DE I 3fl750fll □□1ÛD11 3 | 0 1E 18011 3875081 G E SOLID STATE D . Unijunction Transistors and Switches 2N4987, 2N4988, 2N4989, 2N4990 T ' Z S - c ^ Silicon Unilateral Switch Applications: • SCR Triggers ■ Frequency Drivers ■ Ring Counters
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3fl750fll2n49872n49882n4989+112n49902n4987-902n4969s2cs-42t47j2n2647001jjfsus 2n4987sus ge 2n4987silicon unilateral switch42322detj3075001
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