H11AV2A
Abstract: h11av2 H11AV1A harris H11AV1 H11AV3 H11AV1A H11AV3A 0730-2P H11AV3T
Contextual Info: Optofsolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e H I IAV series consists o f a gallium arsen id e, in fra re d em itting d io d e co u p led with a silicon p h o to tra n sisto r in a dual in-line
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h11av1h11av2h11av3h11av1a+5h11av2ah11av3a0730-2ph11av1a harrish11av3t
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transistor c1684
Abstract: h11av2 equivalent H11AVI OPTOCOUPLER 636 H11AV3 H11AV2A H11AV3A 113t CL685
Contextual Info: QUALITY TECHNOLOGIES TRANSISTOR OUTPUT OPTOCOUPLER H11AV1 H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A PACKAGE DIMENSIONS I G.8G 6.36 I ¥ J W The H11AV series consists of a gallium arsenide infrared emitting diode coupled with an NPN silicon phototransistor in a dual-in-line package. The H11AV1A,
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h11av1h11av2h11av3h11av1a+9h11av2ah11av3ah11avtransistor c1684h11av2 equivalenth11avioptocoupler 636113tcl685
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1AV3A
Contextual Info: Ö U AL IT Y TECHNOLOGIES CORP S7E P 74bbfl51 0 0 0 4 1 7 b OOfl • ö T Y Optoisolator Specifications_ H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The HI 1AV series consists o f a gallium arsenide, infrared emitting
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1AV3A
Abstract: H11AV1A H11AV1 H11AV2A H11AV2 H11AV3 H11AV3A 1av3 0730-2P ic 5304 1a
Contextual Info: G E SOLI» 01 STATE 3>E § 3 f l ? 5 0 ö l ODIITDb O ptoelectronic specifications . Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A G a As Infrared Emitting D iode & N P N Silicon Photo-T ransistor T he G E Solid State H11AV series consists of a gallium arsenide, infrared
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h11av1h11av2h11av3h11av1a+6h11av2ah11av3a0730-2p1av3a1av3ic 5304 1a
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H11AV1A
Abstract: H11AV1 H11AV2 H11AV3 H11AV2A H11AV3A 0730-2P
Contextual Info: G E SOLID STATE 01 DE|3fl750fll 0an70fa O p to e le c tr o n ic s p e c ific a tio n s . Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State HllAV series consists of a gallium arsenide, infrared
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eh11a
Abstract: 1AV Series H11AV1A H11AV1 H11AV2 H11AV3 H11AV2A H11AV3A 0730-2P 11AV2
Contextual Info: Optoisolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e H I 1AV series consists o f a gallium arsenide, in fra re d em itting d io d e co u p led w ith a silicon p h o to tra n sisto r in a dual in-line
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h11av1h11av2h11av3h11av1a+6h11av2ah11av3a0730-2peh11a1av series11av2
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H11AV1A harris
Abstract: H11AV2A
Contextual Info: HARRI S SEMI COND 37E SECTOR 43G2271 D D G2 7 1 b ô 2 I HAS optoelectronic speculations- T -H Î-S 3 Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A G a A s In f ra re d E m ittin g D io d e & N P N S ilic o n P h o to - T ra n s is to r
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43g2271h11av1h11av2h11av3+7h11av1ah11av2ah11av3a0730-2p92cs-4266292cs-429s1h11av1a harris
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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p421 coupler
Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
Contextual Info: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety
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tlp227gatlp227gtlp227g/tlp597ga/tlp227ga-2p421 coupler+9moc604acny17-3ztlp250 mosfet driver application notetlp250 mosfet driverp421 photocouplercny17-2ztransistor ac125tlp181 smd 11-4c1 typemoc3041 application note
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aiou
Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A ge h11a transistor BC 176
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA H 1 1 A V 1 ,A H 1 1 A V 2 ,A H 1 1 A V 3 ,A 6-Pin DIP Optoisolators Transistor Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
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e54915iec380/vde0806iec435/vde0805iec65/vde0860+11iec204/vde011330a-02730d-02aiouh11av2h11av3h11av1ah11av2ah11av3age h11atransistor bc 176
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IT 1172
Abstract: TSC 304-15
Contextual Info: SAFETY R E L IA B IL IT Y A N D S A F E T Y O ptoelectronics may be used in system s in w hich personal safety o r o th er hazard m ay be involved. All com ponents, including sem iconductor devices, have the potential o f failing o r d egrading in w ays that could im pair the proper operation o f such system s. W ell-know n circuit techniques are available to
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H11AV1A
Abstract: H11AV3 SL5504 507Q
Contextual Info: — TH OM SO N/ DISTRIBUTOR SfiE D • T0Et.ñ?3 OQDS74fi 741 ■ TCSK Optoelectronic Products Optoisolators/Optocouplers T ype # D e s c rip tio n S u rg e Iso la tio n V o lta g e RMS M in Continued C u rre n t T ra n s fe r R a tio M in T y p ic a l (ps)
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MOC5010
Abstract: MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143
Contextual Info: - Quick-Reference Product Guide Industry Replacement Guide T h e su g g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts f o r th e p ro d u c ts listed. H a rris a ssu m e s n o re sp o n sibility a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t
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TIL145
Abstract: ge h11a TIL31A TIL33A MOC7811 TIL81 TIL99 TIL903-2 C3012 TIL34A
Contextual Info: Quick-Reference Product Guide Industry Replacement Guide T h e sug g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts fo r th e p ro d u c ts listed. H a r r is assum es n o re sp o n s ib ilit v a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t
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H11AV3
Abstract: H11AV1A H11AV2A H11AV3A AN978 VDE0160 VDE0832 VDE0833 H11AV2
Contextual Info: MOTOROLA B SEM ICONDUCTOR TECHNICAL DATA H11AV1,A H11AV2,A H11AV3,A 6-Pin D IP O p to iso la to rs T ransisto r Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. •
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pc111 optocoupler
Abstract: PC113 optocoupler coy80ng optocoupler crossreference 4N25 PHILIPS optocoupler H11A1 philips cnx82a 4N35 cny17 optocoupler 4N25 optocoupler mct2e
Contextual Info: Philips Semiconductor» Optocouplers Cross-reference Guide O PT O CO U PLER PH ILIPS’ O PTO CO U PLER REPLA C E M E N T CODE no te l O PTO CO UPLER PH ILIPS’ O PTO CO UPLER REPLAC EM EN T CODE (note 1) CNX35 CNX35U direct H11A3 H11A3 direct CNX36 CNX36U
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H11AV1
Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A diode b3l
Contextual Info: MOTOROLA SC DIO D ES/O PTO b4E Ï • b3b725S 0 0 f lb b 43 S T P ■ f l O T ? MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4k TO ca VDE UL C SA SETI BS ® SEMKO DEMKO BABT NEM KO H 1 1 A V 1 ,A * [CTR = 100% Min] H 11 A V 2 ,A 6-Pin D IP O p to is o la to rs
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b3b725sh11av1h11av2h11av3+4h11av3ah11av1ah11av2adiode b3l
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H11AV3A
Abstract: H11AV1A H11AVI H11AV1 H11AV2 H11AV3 H11AV2A
Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA & TO VDE UL CSA SETI SEM KO <§> B S DEM KO N EM KO BAB T H11AV1,A* H11AV2,A H11AV3,A [CTR = 1 0 0 % Min 6-Pin D IP O ptoisolators Transistor Output [C TR * 5 0 % Min] [CTR = 2 0 % Min] T he H11AV1.A, H 11A V 2.A and H 11A V 3.A devices consist of a gallium arsenide infrared
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MCP3021Z
Abstract: MCP3020Z CNY17-3Z MCT2201Z CNY17-1Z MCP3022Z CNY17-2Z C2090 cny17-4z MCT2200Z
Contextual Info: QUALITY • R TECHNOLOGIES VDE APPROVED h ig h -vo ltag e o pto co uplers VDE APPROVED OPTOCOUPLERS jm PACKAGE DIMENSIONS Quality Technologies Corporation's optocoupler can be supplied with approval to VDE component standard 0883/6.80 and equipment standards DIN IEC 435/VDE
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740L6001
Abstract: MCP3040 MCP3010 MCT4R MCp*3041 MCP3031 MCP3030 MCA2230Z MCP3011
Contextual Info: gm QUALITY OPTOCOUPLERS • T echno lo g ies OPTOCOUPLERS Alphanumeric Product Listing Product Page Product Page Product Page 4N25 4N26 4N27 4N28 4N32 . .1-21 . .1-21 . .1-21
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MOC3Q11
Abstract: h11m qx14 21B6 LED55C H11M1 22b4 22L2 NY33 H11M4
Contextual Info: Quick-Reference Product Guide HARRIS OPTOELECTRONIC Devices Index to Types Type No. ' 4 Page No. Type No. Page No. IN6264 IN6265 IN 6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196 196 196 198 198 F5F1 F5G1 GE3009 GE3010 GE3011 GE3Ô12 GE3020
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Optocouplers QTC
Abstract: moc641a optokoppler MOC633A "vergleichsliste" PC618 moc635a vergleichsliste QTC H11AA1 PC627
Contextual Info: Optokoppler Optocouplers Vergleichsliste Cross reference Diese Liste erhebt keinen Anspruch auf Vollständigkeit, im Einzelfall bitte die entsprechenden Datenblätter vergleichen. (This list does not claim being complete, therefore, please compare each individual case with the appropriate
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cnx35cnx35ucnx36cnx38+15cnx48ucnx71acnx72acnx82acny17-1cny17-aoptocouplers qtcmoc641aoptokopplermoc633avergleichslistepc618moc635aqtc h11aa1pc627
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CNY17 III
Abstract: H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47
Contextual Info: Quick-Reference Product Guide _ HARRIS OPTOELECTRONIC Devices Index to Types Type No. 4 Page No. Type No. Page No. Type No. Page No. Type No. Page No. IN6264 IN6265 IN6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196
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C8050 equivalent
Abstract: cny21 equivalent S13MD1 SHF600-1 moc641 QCPL-4502 CNY17-1Z PS2016 CNY17-3Z K8031P
Contextual Info: 10. Cross Reference The fo llo w in g C ross-R eference is m ea nt to serve as a guide fo r existing com p etitive devices to T oshiba's ph o to co u p le r pro du ct line. Toshiba's nearest equivalent devices are selected on th e basis o f general sim ila rity
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