Silicon unilateral switch
Abstract: DG1U SUS GE 2N4987 2N4987 equivalent 2N4987 GE 2N4988 2n498 2N4988 soli capacitors
Contextual Info: "ÏÏÏ G E SOLID STATE DE|3fl750fll DGlflDll 3 | 0 1E 18011 387 5 08 1 G E S O L I D ST A T E D Unijunction Transistors and Switches 2N4987, 2N4988, 2N4989, 2N4990 T 'Z S -c ^ Silicon Unilateral Switch Applications: • SCR Triggers ■ Frequency Drivers
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3fl750fll2n49872n49882n4989+112n49902n4987-9019--overvoltage3s750s1silicon unilateral switchdg1usus ge 2n49872n4987 equivalentge 2n49882n498soli capacitors
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2N4990
Abstract: Silicon unilateral switch 2N4990+SUS
Contextual Info: 2N4990 Silicon unilateral switch SUS in package TO-92 0.45max 0.7max 1 5.2 1.6 2 2.5 14.5 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings Symbol Vrrm IT(rms) Igm IT(sm) P Parameter, units Limits Peak reverse voltage, V DC forward anode current, mA
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2n499045max175masilicon unilateral switch+12n4990+sus
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2N4990
Abstract: 2N4987 SUS 2N4987 SUS GE 2N4987 2N4989 2N4988 Silicon unilateral switch 42322 DETJ3075001 2N4987-90
Contextual Info: G E SOLID STATE □1 DE I 3fl750fll □□1ÛD11 3 | 0 1E 18011 3875081 G E SOLID STATE D . Unijunction Transistors and Switches 2N4987, 2N4988, 2N4989, 2N4990 T ' Z S - c ^ Silicon Unilateral Switch Applications: • SCR Triggers ■ Frequency Drivers ■ Ring Counters
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3fl750fll2n49872n49882n4989+112n49902n4987-902n4969s2cs-42t47j2n2647001jjfsus 2n4987sus ge 2n4987silicon unilateral switch42322detj3075001
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c 337 25
Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3
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c 337 25sc160dtic 2160 triacv130he150+6general electric scr c220es54494533 gem2n4401 2n3904 2222a1n21es5451
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3N84
Abstract: 2N4988 RCA SCR 2n 2N4991 2N327 3N81 2N4984 IN4I48 3N85 40v neon lamp
Contextual Info: SILICON U N I L A T E R A L AND B I L A T E R A L SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of
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2nm462n3273n842n4988+7rca scr 2n2n49913n812n4984in4i483n8540v neon lamp
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2n2646 equivalent
Abstract: SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can
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2n489-4942n2646-472n49872n4990+122n4986in5059-2n4990sus-2n49862n2646 equivalent3n842n4987-90sus 2n49872n4987 equivalentge motor capacitor cross referenceequivalent transistor of 2n6027circuits by using 2n6027
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2N4983
Abstract: transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can
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2n489-4942n2646-47s-2n49832n4986+122n49632n4983---15vtransistor 2n4983general electric c22bcircuits by using 2n60272n2646 equivalentge c22b2n4991sbs thyristor2n602bge motor capacitor cross reference
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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FHC30LG
Abstract: ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358
Contextual Info: RF TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857 MMBR911
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mmbr50312sa17782sc37702sc4269+16mmbr51792sc3837k2sc35452sc37712sa16692sc4364fhc30lgne72089kc535cne388-06al307bmic 78l12 sot89kc535bal30779l05hearing aid lm358
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Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM
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cy8c38cy8c29incl79512t9797+1612t980412t980312t980012t980212t980112t9805arduino mega256013001 s 6d transistorarduino uno rev 3agilent optical encoder 9988mz 13001 transistorarduino mega 2650skiip 613 gb 123 ctarduino sound sensor module picarduino nanomc34063l
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four-layer diode
Abstract: transistor 2N4983 2N4992 D13V1 2N4983 2N4990 2N4991 2N4985 2n4989 RA3A
Contextual Info: SPECIAL SILICON PRODUCTS REFERENCE AMPLIFIERS > V c« = 3 Volts, lc= 0.1 m A , lz= 5 m A , Rb= 1K 2 At Vc e = 3V, lc = .lm A SPECIAL SILICON PRODUCTS INTEGRATED VOLTAGE REGULATOR IVR D13V SERIES The D13V is a monolithic integrated voltage regulator circuit. Designed for use as a shunt voltage regulating ele
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2n49882n49892n49902n4983+92n49852n49862n49912n49922n4993four-layer diodetransistor 2n4983d13v1ra3a
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2n2646 equivalent
Abstract: 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 equivalent transistor of 2n6027 low voltage scr THYRISTOR A2f 2N4985
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can
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2n489-4942n2646-472n2646 equivalent2n4991+82n4991 equivalentsilicon unilateral switchsbs thyristor 2n49912n2646equivalent transistor of 2n6027low voltage scrthyristor a2f2n4985
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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je1100mfc8040mfc8030mc1316+6triac 9707schematic of mc1466transistor mje 5332je 3055 motorolamcr407-2mc1466
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3N81
Abstract: IN4148 anode cathode 2N4983 3N84 eto thyristor thyristor igc TRANSISTOR BO 344 2N4987 2N4985 thyristor eto
Contextual Info: SILICON UNILATERAL AND BILATERAL SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of
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3n81in4148 anode cathode2n49833n84+6eto thyristorthyristor igctransistor bo 3442n49872n4985thyristor eto
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2N4985
Abstract: 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can
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2n489-4942n2646-47gec32u10khz+122n4984i2n2647-2n49852n49852n2646 cross reference2n2646 equivalent2n26462n49832n4991ge scr cross reference2n4992equivalent 2n1671
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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TDA3541
Abstract: tda3510 TDA1047 tda2030 ic audio amplifier TDA1044 tda3530 TCA440 TCA660 BD876 7809A
Contextual Info: ELECTRONIC COMPONENTS DIGEST Integrated Circuits Discrete Semiconductors transistors thyristors diodes JSC C OMPE L Contents GLOSSARY . . . . . . . . . . . . . . . . . . . . . . . . 2 INTEGRATED CIRCUITS TV/Video ICs . . . . . . . . . . . . . . . . . . . . .
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tip115o-22079l09acss9012d+14tip12679l12acss9012etip41ctda3541tda3510tda1047tda2030 ic audio amplifiertda1044tda3530tca440tca660bd8767809a
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2n2646 equivalent
Abstract: 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can
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2n489-4942n2646-472n2646 equivalent2n2646+8triac phase control2n602b2n4991equivalent 2n1671four-layer diodesbs thyristor2n49873n84
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GE TRIAC SC40B
Abstract: 2n4992 3N84 SC40B transistor 2n4992 2N4992 equivalent 2n2646 equivalent triac 9012 SBS thyristor Triac 50 amp 250 volt
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can
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2n489-4942n2646-472n4992sc40b+8ge triac sc40b3n84transistor 2n49922n4992 equivalent2n2646 equivalenttriac 9012sbs thyristortriac 50 amp 250 volt
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FN1016
Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773
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2n11122n12122n12172n1711+152n2219a2n22222n2222a2n23692n2369afn10162sc9012on4409on4673on4843c9012s2000a3bul310xi2sd5080mn1016
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po102
Abstract: 1401CA1 DIAC ecg6407 ECG6407 ic 565 1401CA3 AL307BM 78l05 sot-23 DZS535-15 AL307
Contextual Info: RF & MICROWAVE TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857
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mmbr50312sa17782sc37702sc4269+16mmbr51792sc3837k2sc35452sc37712sa16692sc4364po1021401ca1diac ecg6407ecg6407ic 5651401ca3al307bm78l05 sot-23dzs535-15al307
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thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y
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11pm104thyristor tag 8506nais inverter vf 7f operation manual922aa1y-a4p+7optek a400 817sprague 513dsprague 926csprague 195prapa relay 12vdctriac tag 8948mascot 719
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3N83
Abstract: 3N84 transistor 3N83 pin configuration NPN transistor 9012 PNP 40v neon lamp PNP Monolithic Transistor Pair transistor pnp 12V 1A Continuous Current Peak pin configuration NPN transistor 9012 npn nixie display 2N4987
Contextual Info: SILICON U NILATERAL AND BILATERAL SWITCHES SUS, SBS The General Electric S U S is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approxi mating those of an '‘ideal” four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of
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20/is/3n833n833n84+8transistor 3n83pin configuration npn transistor 9012 pnp40v neon lamppnp monolithic transistor pairtransistor pnp 12v 1a continuous current peakpin configuration npn transistor 9012 npnnixie display2n4987
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