2N6106 Search Results

2N6106

Abstract: 2N6110 BE-1 2N6108 2N6106 application
Contextual Info: Inchange Semiconductor Product Specification 2N6106 2N6108 2N6110 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・With short pin APPLICATIONS ・Power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

Contextual Info: 2N6106 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)80 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)7.0

2N3055 TO-220

Abstract: 2N3055, TO5 complementary-pair 2N3055 TO-3 40250 BUX66C 2N3054 2N5293 BFT19B 2N5495
Contextual Info: COMPLEMENTARY-PAIR POWER TYPES Hometaxial-Base/Epitaxial-Base 1.5 o 2 A \r = 2 .5 A U P-N-P N-P-N l„ 3 t o 3.5 A N-P-N P-N-P N-P-N P-N-P N-P-N L 4 to 6 A w L 121 o 17 A N-P-N * P-N-P P-N-P 2N5293 2N5294 2N6106 2N6107 2N5786 2N 5783 2N3054 2N5955 2N5495 2N 5494

rca 17417

Abstract: TA8445 TA8723 TA8722 2N6476 2N6109 equivalent TA8210 2N6474 2N6106-2N6111 TA7743
Contextual Info: ÏÏÏ 3875081 G E SOLID DE | 3 ñ 7 S G ñ l STATE 01E 17415 DD1741S O D_ r T 3 _ _ General-Purpose Power Transistors - File N um ber 676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 Epitaxial-Base, Silicon

2N6181

Abstract: 2N3055 2n3055 complement 40852 2N3054 2N5293 2N5294 2N5495 2N5783 2N5786
Contextual Info: COMPLEMENTARY-PAIR POWER TYPES Hometaxial-Base/Epitaxial-Base 1.5 o 2 A \r = 2 .5 A U P-N-P N-P-N l„ 3 t o 3.5 A N-P-N P-N-P N-P-N P-N-P N-P-N L 4 to 6 A w L 121 o 17 A N-P-N * P-N-P P-N-P 2N5293 2N5294 2N6106 2N6107 2N5786 2N5783 2N3054 2N5955 2N5495 2N5494

Contextual Info: IEIIS.Uu £e,mi-(2onau.eko^ ^Products., Line. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N61062N61082N6110 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package •With short pin

2N8107

Abstract: rca 17417 TA8232 2N6109 equivalent 2N6476 2N6474 equivalent transistors 2N6473 2N6476 rca DG17417 2N6111 RCA
Contextual Info: ÏÏÏ 387 5081 G E SOLID STATE DE |3fl7SQfll DD1741S D " 01E 17415 t T y T .3 Y Z // Power Transistors - File Num ber 676 r - 3 6 - i ? 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476

2N6106

Abstract: 2N6110 2N6108
Contextual Info: SavantIC Semiconductor Product Specification 2N6106 2N6108 2N6110 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·With short pin APPLICATIONS ·Power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

TA7741

Abstract: 2N6106-2N6111 2N6476
Contextual Info: File Number 676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 HARRIS SEMICOND SECTOR SbE D 43D2571 DÜ4DS03 21M • H A S TERMINAL DESIGNATIONS, 7 = 3 3 - < 2 / Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors General-Purpose Medium-Power Types for

TA8723

Abstract: TLE 6289 647s TA8210 TA7783 TA7741 TA8232 h ta7782 TA7742
Contextual Info: 676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors TERMINAL DESIGNATIONS o G en eral-P u rp o se M e d iu m -P o w e r Typ es for Sw itchin g and A m p lifie r A p plications : t Features: • Low saturation voltages

RCA413

Abstract: 2N5415 2N6079 RCA411 2N3439 2N3440 2N5840 2N6175 2N6177 2N6213
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

2N6103

Abstract: 300W TRANSISTOR AUDIO AMPLIFIER 40594 Complementary Darlington Audio Power Amplifier 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT

40872

Abstract: 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111
Contextual Info: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.

BD278

Abstract: TO-220-AA 2N6033 2N6079 2N6108 2N6102 2N6103 2N6032 2N6098 2N6099
Contextual Info: 2N6033 FAMILY [n-p-n] silicon f j = 50 MHz min; P j = 140 W max DESCRIPTION hFE V/*ES\(SUS) V p e r-t(sus) V/<cu(sill) V V V 2N TYPES l<"» A V « V •CER- "1A Temp.—°C V CF 25 150 V 1.3 1 50 40 5 2 4 2 50 40 0.05« 0.25» 250 8« 5« 250 0.5 1.2 0.2

2N5415

Abstract: 2N3055 RCA 2N3054 transistor BUX66C rca 2n3055 RCA 40250 2N3439 2N3440 rca transistor 508 2N6079
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . . f r to 2 0 M H z . . . P y to 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N]

2N6178

Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053

2N3055 RCA

Abstract: rca413 RCA411 2N3440 rca rca 2n3055 rca 41013 2N5415 2N3772 RCA BUX 64 2N3439
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

2N6491 SWITCH

Abstract: 2N6489 SWITCH 4-0992 ta8662 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT

2n6125

Contextual Info: Power Transistors TYPE POLA­ NO. RITY M AXIM UM RATINGS CASE Pd IC VCEO mW (A) (V) H FE VCE(sat) min max IT CO M P L E ­ IC VCE max IC min MENTARY (mA) (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc