2N2545
Abstract: 2N2547 2N25M 2N1042 2n2042 2N2560 2n2564 2N2565 2N2563 2N1045
Contextual Info: TYPES 2N1042, 2N1043, 2N1044, 2N1045 • 2N2560, 2N2561, 2N2562, 2N2563 • 2N2564, 2N2565, 2N2566, 2N2567 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS 90 a H sm sH a Guaranteed l CEx of 85 °C 4 0 -, 60-, 80-, or 100-V0LT UNITS 20 WATTS AT 25'C CASE TEMPERATURE
|
OCR Scan
|
2n10422n10432n10442n1045+102n25602n25612n25622n25632n25642n25652n25452n25472n25m2n2042
|
PDF
|
2N2458
Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386
|
Original
|
2n19722n909st6600st6601+15sa2715bsx702sc5622n4792n479a2n24582n2537 texas2n25512n24572n2429sgs-ates c4262n24252n23982n2431bf253
|
PDF
|
2N2560
Abstract: MT27 2N2553 2N1041 MT28 2N1043 2n1040 2N1042
Contextual Info: ermanium power transistors 142 PNP ALLOY TRANSISTORS 1 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE' TYPE NUMBER CASE SIZE VCB VCE VEB VCE Ic (A) Min. Max. 2N1038 2N1039 2N1040 2N1041 2N2552 2N2553 2N2554 2N2555 2N2556 2N2557 2N2558 2N2559 TO-5 TO-5 TO-5 TO-5
|
Original
|
2n10382n10392n10402n1041+112n25522n25532n25542n25552n25562n25572n2560mt27mt282n10432n1042
|
PDF
|
MP2145
Abstract: AD149 AD148 2s812 2N2068-0 2N1437 OC26 germanium 2N256 m945
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C •5 · 10 >= MP2145 2N2145 2N2145A 2N618 2N268A 2N20680 2N3161 MP2141 2N2141 2N2141A ~1~~~ 20 MP2146 2N2146 2N2146A 2N1761 2N3157 2N2660 2N2663 2N2666 · ~~~~~2 15 · 25 30 2N1758 2N1362 2N1363 2N1762 ADl63
|
Original
|
mp21452n21452n2145a2n618+152n268a2n206802n3161mp21412n21412n2141aad149ad1482s8122n2068-02n1437oc26germanium2n256m945
|
PDF
|
1N5438
Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi
|
OCR Scan
|
27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175
|
PDF
|
2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
|
OCR Scan
|
2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149
|
PDF
|
2N2458
Abstract: TRF648 sgs-ates transistors FBase-F Package 2N2425 2N2455 westcode diode 2n2534 2n2474 2N2431
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 55 Ie Max (A) Westcode Westcode MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec Marcomclec MarconiElec MarconiElec MarconiElec MarconiElec
|
Original
|
2n2458trf648sgs-ates transistorsfbase-f package+62n24252n2455westcode diode2n25342n24742n2431
|
PDF
|
2n555
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V VCE, V yc.o y VCE, V Min. CURRENT C A IN Hfe Yce @ Ic Max. V A SA TURA TION VOL TA GES y Cf * y SF(|) /c @ y y A A 9j-c aC /W 3 AMP GERMANIUM PNP CA2D2 2N155 2N176 2N235A 2N236A MT-36 TO-3 TO-3
|
OCR Scan
|
2n1552n1762n235a2n236a+7mt-362n236b2n2422n2552n2562n2682n555
|
PDF
|
transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
|
OCR Scan
|
transistor 2n4st25c transistor2n407 transistor2sa114+6tfk 808transistor 2sc124sf1222ge2 transistortfk 877tfk 748
|
PDF
|
Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
|
OCR Scan
|
25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76
|
PDF
|
LS 74151
Abstract: 2N555 MT27 220 hfk 2N176 Germanium Power Devices MT-27 2N2553 2N297A 2N155
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V yc.o CA2D2 2N155 2N176 2N235A 2N236A 2N236B 2N242 2N255 2N256 2N268 2N285A 2N285B 2N297A 2N375 2N392 2N399 2N538 2N538A 2N539 2N539A 2N540 2N540A 2N554 2N555 2N618 2N1359 2N1360 2N1362 2N1363
|
OCR Scan
|
mt-362n1552n1762n235a+142n236a2n236b2n2422n2552n2562n268ls 741512n555mt27220 hfkgermanium power devicesmt-272n25532n297a
|
PDF
|
npn 10 a 50 v to-3 germanium
Abstract: TO10 package germanium transistors NPN AD163 2N1041 AUY26 npn 10 a 50 v germanium 2n1040 germanium 2SB449
Contextual Info: POWER GERMANIUM TRANSISTORS Item Number «C Part Number Manufacturer Type Max V BR CEO (A) (V) Po Max h re fT ICBO Max k)N Max ON) Min (HZ) (A) (s) r (CE)ut T Oper Max (Ohms) Max (°C) 250m 250m 230m 160m 470m 500m 250m 250m 250m 750m 10 10 10 750m 10 10 10
|
Original
|
2n25542n25582n17562n1760+162n31602n31562n10392n25552n2559ck258npn 10 a 50 v to-3 germaniumto10 packagegermanium transistors npnad1632n1041auy26npn 10 a 50 v germanium2n1040germanium2sb449
|
PDF
|
2N1100
Abstract: transistor t03 germanium transistor pnp 2n277 2N1100 Power Transistor 2N4277 2N4280 2N5440 2N1039 2n2912 2N2555
Contextual Info: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s
|
OCR Scan
|
dddd1412n58a2n10732n2158+162n53252n143/132n1073a2n2158a2n54352n174a2n1100transistor t03germanium transistor pnp 2n2772n1100 power transistor2n42772n42802n54402n10392n29122n2555
|
PDF
|
RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
|
OCR Scan
|
rca h 5412t3122n2654as218 transistor+6gex 74adiode germanium 1n283k3004tfk diodeac132ti-483
|
PDF
|
|
|
RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
|
OCR Scan
|
rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
|
PDF
|
transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
|
OCR Scan
|
an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
|
PDF
|
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
|
OCR Scan
|
500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
|
PDF
|
STA6047
Abstract: 2N1038 2n1039 LS 74151 2n2665 2N2661 germanium transistors NPN STA6048 STA9860 STA9861
Contextual Info: silicon power transistors NPN TO-63 cont’d C(M AX) = 10 to 30A VcEO(SUS) = f T = 0.6 to 30 MHz 60 to 350V Is/b to F F tO N @ VcE ICEV Pd @ VcE(SAT) @ Ic/VcE Vbe t = 1sec Generic T r=100°c @ Ic/Ib d jc @ I c / Ib @ VCE fT (Min-Max @ I c / Ib @ Ic/VcE VcEO|SUS|
|
OCR Scan
|
stae046sta6047sta60482n2564+132n25652n25662n25672n26592n26602n26612n10382n1039ls 741512n2665germanium transistors npnsta9860sta9861
|
PDF
|
transistor TF78
Abstract: AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
|
OCR Scan
|
npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om0transistor tf78ac178asz16rt150b1130032n21342s8822sa231gft26 transistorat202
|
PDF
|
2N1100 Power Transistor
Abstract: DTG-2400 2n4280 germanium transistor pnp 2n277 2N2912 2n58a DTG2400 2N2567 2n1039 2N5435
Contextual Info: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s
|
OCR Scan
|
dddd1412n58a2n10732n2158+142n53252n143/132n1073a2n2158a2n54352n174a2n1100 power transistordtg-24002n4280germanium transistor pnp 2n2772n2912dtg24002n25672n1039
|
PDF
|
N1702
Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961
|
OCR Scan
|
2n34a2n43a2n44a2n59a+162n59b2n59c2n60a2n60b2n60c2n61an17022n2772sa632n390al204a2n408tfk 940oc592n3742n1922
|
PDF
|
st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
|
OCR Scan
|
sylvan58mc09a001-0066x0003-00150746a+1568x000368x0003-001t-e013793b3-393b3-4st178diode e1110ck705ecg semiconductor replacement guidecs1237me1120te10881n9421n733adelco dtg-110b transistor
|
PDF
|
