2N2567 Search Results

2N2545

Abstract: 2N2547 2N25M 2N1042 2n2042 2N2560 2n2564 2N2565 2N2563 2N1045
Contextual Info: TYPES 2N1042, 2N1043, 2N1044, 2N1045 • 2N2560, 2N2561, 2N2562, 2N2563 • 2N2564, 2N2565, 2N2566, 2N2567 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS 90 a H sm sH a Guaranteed l CEx of 85 °C 4 0 -, 60-, 80-, or 100-V0LT UNITS 20 WATTS AT 25'C CASE TEMPERATURE

power BJT PNP

Abstract: 2N2567
Contextual Info: 2N2567 Ge PNP Power BJT 6.88 Transistors Bipolar Germanium PNP . 1 of 2 Home Part Number: 2N2567 Online Store 2N2567 Diodes G e PNP Po w er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N2458

Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

2N2560

Abstract: MT27 2N2553 2N1041 MT28 2N1043 2n1040 2N1042
Contextual Info: ermanium power transistors 142 PNP ALLOY TRANSISTORS 1 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE' TYPE NUMBER CASE SIZE VCB VCE VEB VCE Ic (A) Min. Max. 2N1038 2N1039 2N1040 2N1041 2N2552 2N2553 2N2554 2N2555 2N2556 2N2557 2N2558 2N2559 TO-5 TO-5 TO-5 TO-5

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

Contextual Info: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s

2N2458

Abstract: TRF648 sgs-ates transistors FBase-F Package 2N2425 2N2455 westcode diode 2n2534 2n2474 2N2431
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 55 Ie Max (A) Westcode Westcode MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec Marcomclec MarconiElec MarconiElec MarconiElec MarconiElec

2n555

Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V VCE, V yc.o y VCE, V Min. CURRENT C A IN Hfe Yce @ Ic Max. V A SA TURA TION VOL TA GES y Cf * y SF(|) /c @ y y A A 9j-c aC /W 3 AMP GERMANIUM PNP CA2D2 2N155 2N176 2N235A 2N236A MT-36 TO-3 TO-3

AD166

Abstract: AD262 AD263 2N256 2N4241 2N2066 2N1202 2n2148 2N2U germanium
Contextual Info: POWER GERMANIUM PNP Item Number Part Number • 10 >= 20 AD262 2N663 2N1245 2N1246 OC25 AD263 AD263 2N1971 I C 25 30 40 MP1534 2N378 2S8493 2S8493 2N2064A 2N1539A 2N3311 2N4241 2S8493W ~:;11~: 45 50 2N1544A 2N3314 MP1530 2N1529 2N1529A 2N3215 MP1535 2N1534

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types

LS 74151

Abstract: 2N555 MT27 220 hfk 2N176 Germanium Power Devices MT-27 2N2553 2N297A 2N155
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V yc.o CA2D2 2N155 2N176 2N235A 2N236A 2N236B 2N242 2N255 2N256 2N268 2N285A 2N285B 2N297A 2N375 2N392 2N399 2N538 2N538A 2N539 2N539A 2N540 2N540A 2N554 2N555 2N618 2N1359 2N1360 2N1362 2N1363

2N2648

Abstract: BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 BCX59-7 BC107AP BC560 BCY59 BCY59VII BC582 BC582 BC582 2N3043 2N3044 2N304:, 2N2642 2N2643 2N2644 JC501P BCY76 BCY76 MD2974

germanium

Abstract: pnp germanium to36 AD167 2n2063 ASZ1018 2n1182 2N1202 2N1666 2N2063A AD166
Contextual Info: POWER GERMANIUM TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max ON) r HFE fT ICBO Max Max (CE)sat Max ~Oper Max Min (Hz) (A) (8) (Ohms) (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . .10 . . . .15 .

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

STA6047

Abstract: 2N1038 2n1039 LS 74151 2n2665 2N2661 germanium transistors NPN STA6048 STA9860 STA9861
Contextual Info: silicon power transistors NPN TO-63 cont’d C(M AX) = 10 to 30A VcEO(SUS) = f T = 0.6 to 30 MHz 60 to 350V Is/b to F F tO N @ VcE ICEV Pd @ VcE(SAT) @ Ic/VcE Vbe t = 1sec Generic T r=100°c @ Ic/Ib d jc @ I c / Ib @ VCE fT (Min-Max @ I c / Ib @ Ic/VcE VcEO|SUS|

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK