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    2N2661 Search Results

    2N2661 Datasheets (13)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N2661
    Diode Transistor 3 AMP Germanium PNP Transistors Scan PDF 81.34KB 1
    2N2661
    Diode Transistor Silicon Transistors Scan PDF 81.34KB 1
    2N2661
    Germanium Power Devices Germanium Power Transistors Scan PDF 379.49KB 4
    2N2661
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 81.79KB 1
    2N2661
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 52.7KB 1
    2N2661
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 86.93KB 1
    2N2661
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 151.86KB 1
    2N2661
    Unknown GE Transistor Specifications Scan PDF 40.97KB 1
    2N2661
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 86.7KB 1
    2N2661
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 90.48KB 1
    2N2661
    Unknown Vintage Transistor Datasheets Scan PDF 53.88KB 1
    2N2661
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 33.13KB 1
    2N2661
    Silicon Transistor JAN / Consumer / Military / Industrial / Automotive / Hi-Rel Scan PDF 389.7KB 1
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    2N2661 Price and Stock

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    Others 2N2661

    TRANSISTOR,BJT,PNP,90V V(BR)CEO,3A I(C),CAN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N2661 5
    • 1 $7.35
    • 10 $3.67
    • 100 $3.67
    • 1000 $3.67
    • 10000 $3.67
    Buy Now

    Texas Instruments 2N2661

    Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Germanium, TO-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian 2N2661 7,060
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    2N2661 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N2659

    Abstract: 2N2660 2N2662 2N2665 2N2664 2N2668 Germanium Transistor Texas Germanium 2N2667 c 2665 transistor
    Contextual Info: TYPES 2N2659, 2N2660, 2N2661, 2N2662, 2N2663, 2N2664 2N2665, 2N2666, 2N2667, 2N2668, 2N2669, 2N2670 _P-N-P AUOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS m < * 2 c- 5 ¡1 5 50-, 70», or 9 0 -VOLT UNITS Guaranteed l« x at 85°C ° * 2 15 WATTS at 2 5 'C CASE TEMPERATURE


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    2n26592n26602n26612n2662+92n26632n26642n26652n26662n26672n2668germanium transistortexas germaniumc 2665 transistor PDF

    2N1602

    Abstract: 2n1649 2N893 2N6241 2nu8 2N6401 2N2679 2n4327 2N3228 2n4146
    Contextual Info: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T '- ä $ - 'O l 3 discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current Maximum Junction Temperature CC Mw. DC Cate Trinar Current


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    2n6822n685t0-482n686+162n6872n6882n8892n6902n7642n7652n16022n16492n8932n62412nu82n64012n26792n43272n32282n4146 PDF

    MP2145

    Abstract: AD149 AD148 2s812 2N2068-0 2N1437 OC26 germanium 2N256 m945
    Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C •5 · 10 >= MP2145 2N2145 2N2145A 2N618 2N268A 2N20680 2N3161 MP2141 2N2141 2N2141A ~1~~~ 20 MP2146 2N2146 2N2146A 2N1761 2N3157 2N2660 2N2663 2N2666 · ~~~~~2 15 · 25 30 2N1758 2N1362 2N1363 2N1762 ADl63


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    mp21452n21452n2145a2n618+152n268a2n206802n3161mp21412n21412n2141aad149ad1482s8122n2068-02n1437oc26germanium2n256m945 PDF

    2n555

    Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V VCE, V yc.o y VCE, V Min. CURRENT C A IN Hfe Yce @ Ic Max. V A SA TURA TION VOL TA GES y Cf * y SF(|) /c @ y y A A 9j-c aC /W 3 AMP GERMANIUM PNP CA2D2 2N155 2N176 2N235A 2N236A MT-36 TO-3 TO-3


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    2n1552n1762n235a2n236a+7mt-362n236b2n2422n2552n2562n2682n555 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680 PDF

    2N2660

    Contextual Info: 2N6660/2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N6660 and 2N6661 are enhancementmode normally-off transistors that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate


    Original
    2n6660/2n66612n66602n6661dsfp-2n6660+2a0213072n2660 PDF

    LS 74151

    Abstract: 2N555 MT27 220 hfk 2N176 Germanium Power Devices MT-27 2N2553 2N297A 2N155
    Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V yc.o CA2D2 2N155 2N176 2N235A 2N236A 2N236B 2N242 2N255 2N256 2N268 2N285A 2N285B 2N297A 2N375 2N392 2N399 2N538 2N538A 2N539 2N539A 2N540 2N540A 2N554 2N555 2N618 2N1359 2N1360 2N1362 2N1363


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    mt-362n1552n1762n235a+142n236a2n236b2n2422n2552n2562n268ls 741512n555mt27220 hfkgermanium power devicesmt-272n25532n297a PDF

    2N2648

    Abstract: BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601
    Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 BCX59-7 BC107AP BC560 BCY59 BCY59VII BC582 BC582 BC582 2N3043 2N3044 2N304:, 2N2642 2N2643 2N2644 JC501P BCY76 BCY76 MD2974


    Original
    bc237-5bc237abc237a18bc237a5+16bcx70gbcx70rztx237bc167bc167abcx702n2648bc107bp2n2709delco2n26062n32472n2646 texas2n26242n26112n2601 PDF

    2N1100

    Abstract: transistor t03 germanium transistor pnp 2n277 2N1100 Power Transistor 2N4277 2N4280 2N5440 2N1039 2n2912 2N2555
    Contextual Info: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s


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    dddd1412n58a2n10732n2158+162n53252n143/132n1073a2n2158a2n54352n174a2n1100transistor t03germanium transistor pnp 2n2772n1100 power transistor2n42772n42802n54402n10392n29122n2555 PDF

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    rca h 5412t3122n2654as218 transistor+6gex 74adiode germanium 1n283k3004tfk diodeac132ti-483 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353 PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1 PDF

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    thyristor xo 602 ma5a/1/thyristor xo 602 maah 903601n126+62n3392n3201transistor bf 175germanium transistorepitaxial mesa2n241 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor PDF

    2N8402

    Abstract: SN232 2n883 mi SN2014 2n4146 2N3560
    Contextual Info: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T 3 '- ä $ - 'O discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current 1 44 l (»m p») Max. Forward Max. R ev in t Voltate» Vfo m / V hom


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    2n8402sn2322n883 misn2014+22n41462n3560 PDF

    STA6047

    Abstract: 2N1038 2n1039 LS 74151 2n2665 2N2661 germanium transistors NPN STA6048 STA9860 STA9861
    Contextual Info: silicon power transistors NPN TO-63 cont’d C(M AX) = 10 to 30A VcEO(SUS) = f T = 0.6 to 30 MHz 60 to 350V Is/b to F F tO N @ VcE ICEV Pd @ VcE(SAT) @ Ic/VcE Vbe t = 1sec Generic T r=100°c @ Ic/Ib d jc @ I c / Ib @ VCE fT (Min-Max @ I c / Ib @ Ic/VcE VcEO|SUS|


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    stae046sta6047sta60482n2564+132n25652n25662n25672n26592n26602n26612n10382n1039ls 741512n2665germanium transistors npnsta9860sta9861 PDF

    2N1100 Power Transistor

    Abstract: DTG-2400 2n4280 germanium transistor pnp 2n277 2N2912 2n58a DTG2400 2N2567 2n1039 2N5435
    Contextual Info: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s


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    dddd1412n58a2n10732n2158+142n53252n143/132n1073a2n2158a2n54352n174a2n1100 power transistordtg-24002n4280germanium transistor pnp 2n2772n2912dtg24002n25672n1039 PDF