2N378 Search Results

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2N3789

Contextual Info: 2N3789 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N3792

Abstract: 2N3715 PNP 2N3791 2N3716 2N3713 2N3714 2N3789 2N3790 2N3791
Contextual Info: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP

2N3790

Abstract: 2N3789
Contextual Info: 2N3789 2N3790 2N3791* 2N3792* *also available as JAN, JANTX, JANTXV SILICON PNP POWER TRANSISTORS .designed for medium-speed switching and amplifier applications. • TOTAL SWITCHING TIME @ 3 A « 1 iS (TYP 0.5 V (TYP) @ 4.0 A, I„ = 0.4 A • LOW VCE(SAT) =

2N3792 MOTOROLA

Abstract: 2N3789 2N3791 MOTOROLA 2N3713 MOTOROLA motorola 2n3789 GG04 2n3792 2N3790 MOTOROLA N3790 2N3790+MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | tj3fe.7aSM GGÖMSG1 T | "7 ^ 3 3 -2 3 2N3789. MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N3792 S IL IC O N PNP POW ER T R A N S IS T O R S 10 A M P E R E . . designed for medium-speed switching and amplifier applications. These devices feature:

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE PNP TO-3 DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247

2N3716

Abstract: 2N3714 2N3715 2N3713 2n3792 PNP 2N3791 2N3789 2N3790 2N3791 NPN transistor 2n3713
Contextual Info: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP

SOLID POWER CORP

Abstract: 2N3902 2N3788
Contextual Info: 8365700 SOLIO POWER CORP 95 C 0 0 1 0 8 S O L ID PODER CORP "is l~" 3 3 - o ! o DüT|ñ3bS7G0 DODOlOñ 3 HIGH VOLTAGE TRANSISTORS @ @ le VCEO le o O M AX SUS V MA A 2.0 325 3.5 325 100 3.5 4ÛÔ O O PT @ 25°C Watts 2N3788 100 12N3902 100 12N5157 1Ô0 ♦Vcex @ 25°C

2N3716

Abstract: 2N3713 2N3714 2N3715 2N3789 2N3792
Contextual Info: SILICON NPN POWER TRANSISITORS NPN 2N3713 Thru 2N3716 . designed for medium-speed switching and amplifier applications FEATURES * * * * Gain Ranged Specified at 1A and 3A. Low VCE sat : typically 0.5 V @ lc=5 A , lB=0.5A Excellent Safe Operating Areas Complementary PNP Types Available 2N3789 thru 2N3792

pmd10K80

Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

Contextual Info: 2N3789 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: 2N3782 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N3789 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N3902

Abstract: 2N5157 2N515 HFI9 l5a1 2N3788
Contextual Info: A P I ELECTRONICS INC 00433^2 Goooaab soo LIE D mine T -3 * I 3 HIGH VOLTAGE TRANSISTORS TO-3 PT TYPE NO. Ic 325 15 4ÖÖ 1ÔÔ 20 @ 25°C 325 V MA 400 400 5ÔÔ VcEX @ 9 @ lo o in 3.5 100 100 V ceo q ' su s V MA MAX Watte A 2N3788 1Q0 2N3902 100 2N5157 1ÔÔ

ic 23721

Abstract: 23732 23721
Contextual Info: Micmsemi PNP Transistors | Part Number ' PNP JANTXV2N3763 JANTXV2N3763L 2N4126 2N3906 2N4403 PN2907A 2N5401 2N2907A 2NS091 2NS093 2N5094 2N5096 2N3053 2N3774 2N3778 2N3245 2N3775 2N3779 2N3776 2N3780 2N3777 2N3781 2N3660 2N3661 2N3782 2N3719 2N3867 2N3867S

2N62U

Contextual Info: 8 E ì I m J E L E C T R O N IC S , INC. COLLECTOR CURRENT = D evice No 2N3660 2N3661 2N3740 2N374I 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2N5344 2N5345 2N5679 2N5680 2N62U 2N6212

MJ2955

Abstract: 2N3442 2N3055 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

2N4004

Abstract: 2N3551 2N1936 2N4005 2N326S tip665 TIP540 TIP664 2N6128 2N6127
Contextual Info: Case Outlines TO-61 2-67 max TO-63 TO-111 4 25 Metal Can Power \ High Reliability Professional Types continued Device Type 2N3789 2N3713 2N3715 2N3791 TIP5433 2N5940 2N3790 2N3792 2N5939 2N6127 2N6128 2N3714 2N3716 2N4301 TIP562 TIP563 TIP663 TIP664 TIP665

2N438b

Abstract: 2N1702 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899
Contextual Info: 15 SILICON POWER TRANSISTORS S A T U R A T IO f SI VO LTAG ES CUR REIN T G A IN TYPE NUMBER CASE TYPE V CBO V o < m O @> V EBO V h F I: M IN . I M A X . vCE @ 'c V A *C A VCE s VBE(s) V , V *B A 2 AMP SILICON P MP Observe (— ) Negative P olarity 2N3782

2N5875

Abstract: BDX85C LM3661TL-1.40 BU208 2N5886 BDW52B
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

Contextual Info: Power Transistors TO-3 Case TYPE NO. •c Pd BVc b O hFE bvceo @lc VCE SAT O <c *TYP (W) (A) NPN PNP MAX (A) (V) (V) MIN MIN MIN MAX (V) (A) MAX *T *TYP (MHZ) MIN 15 115 100 60 5.0 — 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . 2N3789 10 150 80 60

AD166

Abstract: AD262 AD263 2N256 2N4241 2N2066 2N1202 2n2148 2N2U germanium
Contextual Info: POWER GERMANIUM PNP Item Number Part Number • 10 >= 20 AD262 2N663 2N1245 2N1246 OC25 AD263 AD263 2N1971 I C 25 30 40 MP1534 2N378 2S8493 2S8493 2N2064A 2N1539A 2N3311 2N4241 2S8493W ~:;11~: 45 50 2N1544A 2N3314 MP1530 2N1529 2N1529A 2N3215 MP1535 2N1534

Contextual Info: HIGH VOLTAGE TRANSISTORS TO-3 PT TYPE NO. @ Ic VCEO Ic is Y M ÀX sui V MA Watts A 2N3788 1Q9 2N3902 100 2N5157 1ÖÜ V lao MA @ V cex Ic 125°C MA V ?25 100 400 5-9 325 100 400 .25 700* 2.5 4ÖÖ 1ÔÔ 5ÔÔ .25 7ÜÜ* .5 2,0 3.5 15 *Vcex @ 25°C @ Veto

2N3789

Abstract: 2N3792 2N3790 2N3791 2N3716 P125a
Contextual Info: SILICON PNP POWER TRANSISITORS PNP 2N3789 Thru 2N3792 designed for medium-speed switching and amplifier applications Boca Semiconducotor Corp. FEATURES * Tow Gain Ranges: BSC hFE Min = 15 and 30@IC=3A -2N3789.2N3790 25 and 50@lc=1A -2N3791,2N3792 h t t p ://wWW.b0Casemi.C0m