2N515 Search Results

2N5157

Contextual Info: TYPE 2N5157 N-P-N SILICON POWER TRANSISTOR • 100 W at 75° C Case Temperature • 700 V Collector-Emitter Off-State Voltage • Min V BR CEO of 400 V • Max t0ff of 1.7 /is at lc = 1 A • Typ VcE(sat) of 0.3 V at lc = 3.5 A • Typ f r of 5 MHz at 12 V , 0.2 A

2N5002

Contextual Info: TYPES 2N5002, 2N5004. 2N5152, 2N5154 N-P-N SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TR AN SISTO RS W IT H CO M PUTER-D ESIG NED ISO TH ER M A L G EO M ETR Y 3 3 C B -4 mC< • For Complementary Use with 2N 5003, 2N 5005, 2N 51 51, and 2N 5153

2N5152U3

Contextual Info: 2N5152U3 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High

Contextual Info: 2N5151 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power switching • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5151J • JANTX level (2N5151JX)

2N5154L

Contextual Info: Data Sheet No. 2N5154L Generic Part Number: 2N5154L Type 2N5154L Geometry 9201 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/544 Features: • • • • Silicon power transistor for use in high speed switching applications. Housed in a TO-5 case.

2N5152L

Abstract: MIL-PRF-19500 544 electrical
Contextual Info: Data Sheet No. 2N5152L Generic Part Number: 2N5152L Type 2N5152L Geometry 9201 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/544 Features: • • • • Silicon power transistor for use in high speed switching applications. Housed in a TO-5 case.

2N5154SMD

Contextual Info: 2N5154SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed

2n6151

Abstract: 2N5005 2n5153 2N5004 2N5003 2N5151 2N5002 2N5152 2N5154
Contextual Info: TYPES 2N5003, 2N5005. 2N5151. 2N51S3 P-N-P SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY For Complementary Use With 2N5002, 2N5004, 2N5152, 2N5154 15 mJ Reverse Energy Rating with I q - 10 A and 4 V Reverse Bias

2N5151S

Contextual Info: 2N5151S Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)

2N5153U3

Abstract: 2N5153 JANS 2N5153 2N5153 JANTXV 2N5151 2N5151L 2N5153L IC 545 305
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS 2N5151 2N5151L 2N5151U3 2N5153 2N5153L

2N3902

Abstract: 2N5157
Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices Qualified Level 2N3902 JAN JANTX 2N5157 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current Total Power Dissipation

2N3902

Abstract: 2N5157 JANTX2N5157
Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices Qualified Level 2N3902 JAN JANTX 2N5157 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current Total Power Dissipation

B205A

Abstract: 2n5152 2N5151 2N5154
Contextual Info: Datasheet central Vi ^ W l • — ■ 2N5151 2N5152 2N5153 2N5154 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS W *m Spwiirnwili iftfli1corn. 9^9■■ llvWI IUVvbwl WB pva 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824

2N5154

Abstract: 2N5152 MIL-PRF-19500 2N5154 2N5152L 2N5154L JANTXV2N5154
Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 Devices Qualified Level 2N5152 2N5152L JAN JANTX JANTXV 2N5154 2N5154L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

LE17

Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR 2N5154N2A • Hermetic Ceramic Surface Mount SMD1 Package • High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM PD TJ Tstg Collector – Base Voltage (IE = 0)

2SB5950

Abstract: B0540C to-53 2SB595-0 B0242c 2N3186 2N3198
Contextual Info: POWER SILICON PNP Item Number Part Number I C} 5 -10 20 2SB1270 2SB9200 2SA1293 2N5005 2N5153 2N5153S 2N5609 2N5617 See Index NthAmerSemi Semelab SGS-Ates NthAmerSemi NEC Corp JA See Index Matsushita Matsushita Matsushita ~emel~ ToshibaCorp Sanyo Elect Sanyo Elect

2N5152L

Abstract: 2N5152LJ 2N5152LJS 2N5152LJV 2N5152LJX
Contextual Info: 2N5152L Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa offers: • High-speed power switching • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5152LJ • JANTX level (2N5152LJX)

Contextual Info: NPN High Power Silicon Transistors 2N3902 & 2N5157 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 • TO-3 TO-204AA Package Maximum Ratings Symbol 2N3902 2N5157 Units Collector - Emitter Voltage Ratings VCEO 400 500 Vdc Emitter - Base Voltage

Contextual Info: 2N5152S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)

2N5152

Contextual Info: Search Results Part number search for devices beginning "2N5152" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N5152 NPN TO39 80V 5A 30 100 5/2.5 60MHz

Contextual Info: 2N5154XSMD1-SQR-A MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCH 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 )

Contextual Info: 2N5152 2N5154 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCHES 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. DESCRIPTION 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. The 2N5152 and the 2N5154 are silicon

Contextual Info: 2N5151SMD05 2N5153SMD05 MECHANICAL DATA Dimensions in mm inches PNP BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 )

Contextual Info: 2N5151S Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)