2N3301 Search Results

2N3301

Abstract: 2N330
Contextual Info: 2N3301 2N3302 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N3301 and 2N3302 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are designed to cover a wide range of amplifier and switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM

2N3302

Abstract: 2n3301
Contextual Info: SGS-THOMSON 2N3301 2N3302 R!tlD EæilLI(g'iri iD(SS GENERAL PURPOSE AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N3301 and 2N3302 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are designed to cover a wide range of amplifier and

Contextual Info: 30E ]> • 7^2^237 0031171 5 '" P 3 S - 1 S r z 7 SCS-THOMSON ^7# 2N3301 2N3302 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESC RIPTIO N The 2N3301 and 2N3302 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are designed to cover a wide range of amplifier and

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

BCY59-9

Abstract: bsx21 npn transistor 2N120 001-120 2N160A 2N915 8SX21 2N719 2N720 2N720A
Contextual Info: TO-18 METAL-CAN PACKAGE TRANSISTORS NPN E le c tric a l C h a ra c te ris tic s M a x im u m R a tin g s Typ* N o. VCBO (V) Min V CEO V EBO *CBO (V) Min (V) Min (^A ) Ma ' V CB hFE 0.100 10.0 10.0 10.0 1.20 5.00 0.90 1.30 50 150 15 150.0 10.0 10.0 10.0

2N4033

Abstract: 2N3702 2N3794 2N4235 2N3107 2N3115 2N3073 2N3081 2N3108 2N3109
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. >- C A SE a < _i o CL M AXIM UM R A T IN G S Pd mW •c H V C E (S A T ) FE 'c (A ) V C EO (V ) min max max 'c f T min Cob C O M PLE­ max M EN TA RY TYPE (m A | V CE (V ) (V ) (A ) (MHz) (pF) 2N3073 2N3081 2N3107

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

2n3547

Abstract: 2N3549
Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. 2N2896 2N2897 DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V e ic h FE BVCBO BVCEO BVEBO •CBO « VCBO (mA) (V) MIN VCE V C E (S i iT) IC Cob (V) (V) (mA) MAX MAX (pF) MAX n- NF ton

2n3298

Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
Contextual Info: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max

IC 4047

Abstract: N2219 ic 4046 bsw830 BSW82 N 2222 N2222A BSW83 2N3301 2N3302
Contextual Info: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 5C 0mA) in TO-18 and TO-39 (~ T O - 5 ) metal cases for high speed switching Type Characteristics @ Tam b= 25°C Maximum Ratings f" l„ Tam b— ff 2 5 °C Tease— V CE = 10 V = 10 mA

N3020

Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A
Contextual Info: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F | n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220

2N9308

Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
Contextual Info: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5

2N4033

Abstract: 2N2905 2N3702
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS POLA­ RITY CASE 2N2838 2N2868 2N2897 2N2904 2N2905 P N N P P 2N2905A 2N2906 2N2906A 2N2907 2N2907A TYPE NO. H FE Vc, COMPLE­ C* h min max MENTARY MHz (MHz) TYPE max (mA) VcE (V) (V) (A) 225 120 200 120

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

2n3009

Contextual Info: Small Signal Transistors TO-18 Case Continued T Y P E NO. D E S C R IP T IO N bvc bo b v c eo b v e b o I C B O « m <V) MM IMI (V) mu h PE VCBC « te (m A) (ft* ) M AX 0 VCE (V) VC£(Si T )« « C Cob (V ) (m A) M AX W * . M AX m NF ton toft (MHZ) (< «) (M )

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

2n2846

Abstract: 2N3015 2n2224 MOTOROLA 2n2218 TRANSISTOR 2n2848 2N2222A motorola 2C2222A MPS8092 2N4401 die 2n3116
Contextual Info: 34 M O T O R O L A SC -CDIODES/OPTO} 1 D • t,3fc,7S55 0 0 3 7 ^ 7 4 34C 37974 7"-3r- /S SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C2222A — DIE NO. NPN LINE SOURCE — DMB101 This die provides performance similar to that of the following device types:

2N295

Abstract: 2N2891 2N223
Contextual Info: central se hi co nd u ct or bi D F | n a n t . 3 o o o o s it, 1 9 8 9 9 6 3 CENTRAL SEMICC3NDUCTOFr ' " _ 6 IC 00 216 NPNM ETALCA N -SW ITC H IN G AND GENERAL PURPOSE Cont'd. i — 21 h CDb MHz pF 8 8 8 8 8 < o 00 at VCE V V 2N2219 2N2219A 2N2220 2N2221

2N3134

Abstract: 2N3135 2N3136 2N3250 2N3250A 2N3251A 2N3299 2N3300 2N3302 BT2907A
Contextual Info: Transistors Cont. Discrete Devices Medium Current, High-Speed Amplifiers (Cont.) Maxim um Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C V c b VCE V e b Volts Volts Volts V C E (Sat) lc /l„ H f e @ >C Min/Max mA Volts m A/m A

2SC1675L

Abstract: 2N2196 2N2214 2N2161 2N2204 LOW-POWER SILICON NPN BF235 TL3643 2n2222 to92 BFX97
Contextual Info: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 PN2221 2N2218 BSX60 2N2846 2N3015 MPS2222 MPS6532 2N2845 MMBT2222 2N2961 PH2222 UPI2218 2N2219 2N2538 2N3981 2N3981 2N3981 2SC773 2N5028 2N5028 ~~~g~ 25 30 35 -40 45 50 2N2960 A5T2222 BFX94A

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A