T0237 Search Results

SST5484

Contextual Info: Temic S e m i c o n d u c t o r s W S08 T0220 TOS2 T0237 GateUafcage rpA> Ij>ss , u m Mifl T092 2 lead Max Min Max Min T092 (3 lead) . 9ft . Typ Max | Max Typ ] Max Comments T0220AA (T092) J210 15 12 J211 20 12 15 40 12 J212 -25 -3 -2.5 ' -4.5 -4 ~6 -1 0 0

N-Channel JFET FETs

Abstract: T072
Contextual Info: T emic S e m i c o n d u c t o r s ^ S08 T052 T0220 T0237 T092 <2 lead T092 3 lead) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode (continued) Part N um ber | Vm ¿t- (••) II - «>-•-¿j Î ' ¿.A.: T0226AA (T092) VP0300L -3 0 2.5 -4.5 30 60

2410m

Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
Contextual Info: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■

Contextual Info: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)

2N2907a national

Abstract: 2N2222A TO-92 2N2907A TO-92 2N4401 NATIONAL SEMICONDUCTOR NPN transistor 2N2222A in T0-92 package Transistor 2N2222A transistor 2N3725 2N2904A 2N2905A 2N2907A
Contextual Info: bôE T> m bS 0 1 1 3 G □DB'iSe'i c m NATL S E M I C O N D Devices VtEOtsusti Volts Min NPN (ns) Max mA bpE @ l( Mia mA VcE(sat)@lc& (Volts) Max mA mA *T (MHz) Min Package PD (Amt) (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150

NTE130

Abstract: 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211
Contextual Info: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts BV ebo " fe Pd *T 4 30 Min 8 150 80 (CER) 5 20 Min 50* 1.8 4 80 (CER) 5 20 Min 50* 4 Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) 'c 1.5 BVcbo BVceo 70 70 (CER)

2N6717

Abstract: 2N6728 2N6716 92GU05 92GU06 T060
Contextual Info: 92GU05,06 2N6716.17 NPN POWER TRANSISTORS 60-80 VOLTS 2 AMPS, 1.2 WATTS COMPLEMENTARY TO THE 2N6728, 29/92GU55, 56 SERIES Applications: • High Vc e ratings: 92GU05 = 60V min. VCEO 92GU06 = 80V min. VcEO EMITTER • Exceptional power-to-price ratio C A S E S TY LE TO-237

diac D30

Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
Contextual Info: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED

datasheet s402

Abstract: s402
Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDDF-4R6-001 REV: 3 Page: 1/5 0.39" Quadruple Digit Displays ELF-4R6GWB/S402 PART NO. : ECN : █ Features : █ Applications: ● Industrial standard size. ● Audio equipment ● Low power consumption. ● Instrument panels

Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo

bc857 to 92

Abstract: to236 2N2222A D41D4 pN3644 BCX79 national PN2222A
Contextual Info: Devices V CE0 su*t (Volts) Min PUP NPN 45 BCX59 fT@ lC II f e @ I c Min Max mA (MHz) Min mA NF (HB) Max Pp (Arab) Paekage (mW) @25°C BC857 100 125 800 2.0 300 Typ 10 10 TO-236* 350 BC860 100 125 800 2.0 300 Typ 10 3.0 TO-236* 350 BCX71 100 120 630 2.0 125 Typ

2N6728

Abstract: BC546 BC556 2N4036 national NSDU05
Contextual Info: bflÇ ]> • b S 0 1 1 3 G D G B T S lb 4 3 b « N S C S General Purpose Amplifiers and Switches continued; _ _ N A T L SEni COND ( D I S C R E T E (Volts) Min 65 60 PNP NPN - f i Devices V C E 0 ( m i s I) fT @»c hF E @ lc mA NF (dB) Max Min Max

NTE130

Abstract: NTE199 NPN RF Amplifier NTE241
Contextual Info: BI-POLAR TRANSISTORS Olag. No. •c 0VCBO BVceo BV ebo hFE Pd •t RF Pwr Amp/Driver, CB P0 = 3.5W Min, 27MHz, 12.5V T 039 21a 1.5 70 70 (CEFt) 4 30 Min 8 150 NPN-Si Audio Power Output & Medium Power Switching (Compì to NTE 197) T0220 11 a 7 90 80 (CER)

CDLE-031-106

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDLE-031-106 REV.: 1 Page: 1/4 4.7mm Round Type LED Lamps PART NO. : 313-2UYT/S530-A4 ECN: █ Features : ● Choice of various viewing angles ● Available on tape and reel. ● Reliable and robust Package Dimensions:

NTE130

Abstract: NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192
Contextual Info: N T E ELECTRONICS INC S2E D • b M B l S S ^ a D O S S I 6 024 B I N T E TRANSI5TÖ BS-6U PO LA B T —33—01 Maximum Breakdown Voltage Collector to Base Volts) Collector to Emitter (Volts) Emitter Io Basa (Volts) Typical Forward Current Gain Maximum Collector

2SC1861

Abstract: mpsa42q LOW-POWER SILICON NPN BF417 sm 6aa PE155A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 go. 95 PN3440 BFN22 BF622 BF422S PE422 S922TS BF822S S2057 2SC3333 2SC3334 Manufacturer V(BR)CEO hFE Ic Max (A) fT (Hz) PhilipsElec Siemens Akt See Index

NTE153

Abstract: Nte 157 NTE123AP nte129 NTE159M nte123
Contextual Info: BI-POL AR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BV ceo BV ebo &FE T018 28a •c 0.8 BVcbo Amp, Audio to VHF Freq.,

ELS-316SURDB/S530-A3

Abstract: T02373
Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDDS-316-027 REV: 1 Page: 1/5 0.36" Singlel Digit Displays PART NO. : ELS-316SURDB/S530-A3 ECN : █ Features : █ Applications: ● Industrial standard size. ● Audio equipment ● Low power consumption. ●

Contextual Info: Package Information Vishay Siliconix TO−263 D2PAK : 3−LEAD - B- A INCHES E C2 L2 - A- E1 D1 D L 1 3 L3 2 A A b2 E2 Detail A b C e 0.010 M A M L4 2 PL 0_ - 5_ Dim A b b1 b2 c* c1 c2 D D1 E E1 E2* e L L1 L2 L3 L4 M Min Max 0.160 0.190 0.020 0.039 0.020

2N671A

Abstract: 2N671 2N6727 2n671 transistor 2N6715 2N6726 TRANSISTOR 726 2N6714
Contextual Info: Datasheet Central 2N6714 2N6726 Semiconductor Corp. 2N6715 2N6727 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-237 CASE Manufacturers of World Class Discrete Semiconductors

BC337 BC547

Abstract: BC182 BC547 BC547 surface mount T0-92 BT2907A TN2905A BC237 2n5962
Contextual Info: bSD113Q DDa^Sl? 372 * N S C 5 m Devices Volts Min •c Min Max 2N4032 1000 100 2N6554 1500 80 SEniCOND PNP NF (dB) Max Package I’ d (A n ti» (mW) @25°C mA (MHz) Min mA 300 100 150 50 TO-39 800 300 50 75 50 T0-202(55) 1333 M M BT2907A 600 100 300 150

T0236

Abstract: to236 2N2222A
Contextual Info: bßE T> m bSQ113G CHM * N S C S NATL SEniCOND DISCRETE Devices VcEO(sust) (Volts) Min NPN 60 50 *01» PNP mA Min mA VcE{sat) lc 4 Ig (Volts) Max mA *T (MHz) mA Min P D(Amb| Package (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150

2N6714

Abstract: 2N6726 2N6727 92GU51 92GU51A 30C40
Contextual Info: 92GU51.51A 2N6726.27 PNP POWER TRANSISTORS -30- -40 VOLTS 2 AMPS, 1.2 WATTS COMPLEMENTARY TO THE 2N6714,15/92GU01, 01A SERIES Applications: • Class “B” audio outputs/drivers. • General purpose switching and lamp drive in industrial and automotive circuits.

2n2907 TO-92

Abstract: BC337 hie hre hfe bc337 hie c237a C714B BC337 hoe 2N3702 NATIONAL SEMICONDUCTOR C2371 C2379 hie for bc337
Contextual Info: Process National Semiconductor 3 S o -(pS 2_ 63 PNP M edium Row ^ 12. ( 2 13 2 1 Uj- D ESC R IPT IO N 3.020 Process 63 is a non-overlay, double-diffused, si I epitaxial device. Complement to Process 19. A PPLIC A T IO N This device was designed for use as general pure