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    NDS9435

    Abstract: NDS9945 NDS9410 NDS9430 NDS9400 NDS9405 NDS9407 NDS9947 NDS9948 NDS9955
    Contextual Info: D M fte c E T c / *• T> m bäE Power M OSFETS continued bSQ113G 003^4^3 OOT « N S C 5 SOIC-8 Dual/Single DMOS soice 81 NChannel NATL SEfllCOND rOS(on) (Volts) Min Device VGS= 10V Ves = 4.5V (DISCRETE) 1 •o Po (A) Max (Watts) Max Configuration Pin Out


    OCR Scan     		bsq113qnds9410nds9945nds9955+8nds9956nds9400nds9405nds9407nds9430nds9435nds9947nds9948 PDF

    T0236

    Abstract: to236 2N2222A
    Contextual Info: bßE T> m bSQ113G CHM * N S C S NATL SEniCOND DISCRETE Devices VcEO(sust) (Volts) Min NPN 60 50 *01» PNP mA Min mA VcE{sat) lc 4 Ig (Volts) Max mA *T (MHz) mA Min P D(Amb| Package (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150


    OCR Scan     		bsq113g2n2904a2n2905a2n2907a+8mmbt2907apn2907apn3645tn2905ao-236t0-92t0236to236 2n2222a PDF

    DIODE 3L2

    Abstract: Complementary MOSFET Half Bridge
    Contextual Info: e? National February 1996 Semiconductor' NPS8852H Complementary MOSFET Half Bridge Features General Description These Complementary M O SFE T half bridge devices are produced using National's proprietary, high cell density, D M O S technology. This very high density process is especially tailored to


    OCR Scan     		nps8852hb5d113qdiode 3l2complementary mosfet half bridge PDF