NTE250 Search Results

NTE2503

Contextual Info: NTE2503 Silicon NPN Transistor High Gain Switch Features: D High DC Current Gain D High Current Capacity D Low Collector–Emitter Saturation Voltage D High Emitter–Base Voltage Applications: D AF Amplifier D Various Driver Absolute Maximum Ratings: TA = +25°C unless otherwise specified

NTE249

Abstract: SILICON COMPLEMENTARY transistors darlington darlington complementary power amplifier
Contextual Info: NTE249 NPN & NTE250 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications.

Contextual Info: NTE2505 Silicon NPN Transistor Low Frequency, General Purpose Amp Features: D High Current Capacity D High DC Current Gain D Low Collector Emitter Saturation Voltage D High Emitter Base Breakdown Voltage Absolute Maximum Ratings: TA = +25°C unless otherwise specified

NTE2501

Abstract: NTE2502
Contextual Info: NTE2501 NPN & NTE2502 (PNP) Silicon Complementary Transistors High Voltage for Video Output Features: D High Breakdown Voltage D Excellent High Frequency Characteristics Applications: D High Definition CRT Display D Color TV Chroma Output, High Breakdown Voltage Drivers

NTE2508

Contextual Info: NTE2508 NPN & NTE2509 (PNP) Silicon Complementary Transistors Video Output for HDTV Features: D High Gain Bandwidth Product: fT = 500MHz D High Breakdown Voltage: VCEO = 120V Min D Low Reverse Transfer Capacitance and Excellent HF Response Applications:

Contextual Info: NTE2506 Silicon NPN Transistor High Frequency Video Driver Description: The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the cascode stage of the driver for high–resolution color graphics monitors. Features: D High Breakdown Voltage

"NPN Transistor"

Abstract: tab ic
Contextual Info: NTE2507 Silicon NPN Transistor High Frequency Video Output Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE2504

Contextual Info: NTE2504 Silicon NPN Transistor High Gain Audio Amplifier Features: D Large Current Capacity IC = 2A D Adoption of MBIT Process D High DC Current Gain: hFE = 800 to 3200 D Low Collector–Emitter Saturation Voltage: VCE(sat) < 0.5V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo

NTE199

Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
Contextual Info: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

100 amp npn darlington power transistors

Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
Contextual Info: 1995-2012.qxp:QuarkCatalogTempNew 9/11/12 8:56 AM Page 1995 25 Transistors and MOSFETs Silicon Bipolar Transistors Collector to Base V Collector to Emitter (V) Emitter to Base (V) Typical Fwd. Current Gain NPN NPN NPN NPN NPN NPN NPN NPN NPN 0.5 15.0 4.0

123AP

Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
Contextual Info: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge

nte160

Contextual Info: BI-POL AR TRANSISTORS Typical Forward Current Gain Maximum Collector Power Dissipation Watts Case Style Diag. No. Maximum Collector Current (Amps) >C BVCbo BVceo BVebo hre Pd »T Darlington Switch (Compì to NTE2427) SOT-89 555a 0.5 90 80 (CER) 5 2000 Min