NTE128 Search Results

NTE1287

Abstract: audio amp pack 20w
Contextual Info: NTE1287 Integrated Circuit Linear, Audio Power Amp, 20 Watt Includes Thermal Shutdown Description: The NTE1287 is a monolithic integrated operational amplifier in a 14−lead quad in−line plastic package, intended for use as a low frequency class B power amplifier. Typically it provides 20W output

NTE1282

Contextual Info: NTE1282 Integrated Circuit Module − Hybrid, Audio Power Amplifier, 35W Features: D 2 Power Supplied Required D Darlington Type D Quasi−Complementary Output Absolute Maximum Ratings: TA = +25°C unless otherwise specified Maximum Supply Voltatge, VCCmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±45V

NTE1281

Abstract: NTE128 "Audio Power Amplifier"
Contextual Info: NTE1281 Integrated Circuit Module − Hybrid, Audio Power Amplifier, 50W Features: D 2 Power Supplied Required D Darlington Type D Pure Complementary Output Absolute Maximum Ratings: TA = +25°C unless otherwise specified Maximum Supply Voltatge, VCCmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±53V

NTE129P

Abstract: NTE128P transistor pnp NTE129P
Contextual Info: NTE128P NPN & NTE129P (PNP) Silicon Complementary Transistors General Purpose Amp Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features:

ramp generator

Abstract: NTE1289
Contextual Info: NTE1289 Integrated Circuit TV Vertical Deflection System Description: The NTE1289 is a monolithic integrated circuit in a 12–Lead quad in–line package designed for use in black and white and color TV receivers. Features: D Synchronization Circuit D Oscillator and Ramp Generator

NTE128

Abstract: NTE128 equivalent NTE129 NTE129MCP Transistor NTE128 NTE-129
Contextual Info: NTE128 NPN & NTE129 (PNP) Silicon Complementary Transistors Audio Output, Video, Driver Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current

NTE1291

Abstract: NTE1288 NTE1293 car audio amp
Contextual Info: ÎN T E EL ECTRONICS INC 17 E 1 43125*1 OOOEO 41 5 AUDIO PWR AMP, 20W, INCLUDES THERMAL SHUTDOWN, Vfcc=±22V 14-LEAD DIF» SEE DIAG 247 NTE1287 . T-90-01 AUDIO PWR AMP, 10W, FOR CAR RADIO, Vcc=18V MAX • 5-LEAD 10-220, SEE DIAG 205 NTE1288 V . + Vcc NC—

NTE1288

Abstract: NTE1232
Contextual Info: NTE1288 Integrated Circuit Audio Power Amplifier, 10W for Car Radio Description: The NTE1288 has improved performance with the same pin configuration as the NTE1232. The additional features of the NTE1232; very low number of external components, ease of assembly, space

NTE1286

Abstract: 40Vsupply NTE1285
Contextual Info: NTE1285 & NTE1286 Integrated Circuit Audio Power Amplifier, 5.8W Description: The NTE1285 and NTE1286 are audio power amplifiers in a 7–Lead SIP type package designed especially for car radio and car stereo applications. These devices are encapsulated in newly developed

Contextual Info: LINEAR INTEGRATED CIRCUITS NTE1286 Front View 7-Lead SIP, See Diag. 276 Audio Power Amp, 5.8W, (Mirrior Image Pin-Out of NTE1285), VCC = 18V NTE1287 14-Lead Staggered DtP, See Diag. 251 Audio Power Amp, 20W, W/Thermal Shutdown, Vcc * ±22V I Input Ramp putput |

Contextual Info: NTE128 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)1 Absolute Max. Power Diss. (W)1 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.90 h(FE) Max. Current gain.

1k trimpot

Abstract: poppet "am transmitter" the Poppet 500 milliwatt AM transmitter lm386 microphone 2N3819 equivalent ferrite core binocular NTE128 transistor 2n3053 hartley oscillator transistor equivalents for 2n2222a
Contextual Info: the Poppet 500 milliwatt AM transmitter 1 of 1 the Poppet "The Poppet" is a half-watt AM transmitter designed by Mr. Doug Gibson of England. The original design was published in issue 84 of SPRAT, newsletter of the GQRP Club. The version shown here incorporates changes suggested by

NTE1281

Abstract: NTE1269 dual balance mixer NTE1267 NTE1278 NTE1286 NTE1264 NTE1265 NTE1266 NTE126
Contextual Info: LINEAR INTEGRATED CIRCUITS N TE1264 16 -L e ad DIP, See Diag. 248 Video AGC Circuit for VCR, Vc c = 12V Typ N TE1265 18 -L e ad DIP, See Diag. 256 Noise Suppression Circuit for VCR, V cc = 12V Typ Emitter Follower Output High Pass Amp Input B Emitter Follower

LM317T

Abstract: tda2003 light bulb battery charger circuit LM317T battery charger LM317 design and the light bulb current limiter ECG1288 LM317T CURRENT CIRCUIT NTE1288 12v battery charger lm317 Ammeter circuit design
Contextual Info: Current limiting section Voltage doubler circuit only needed for 3 Li-Ion cells or more Lithium-Ion charger circuit 20w 12v* 1N5400 1N5400 +In A+ +12v input (prototype) (8-18v possible) 2 5 IC2 1 390k +Out LM317T Adj 220uF 220 3v grain of wheat* 4 1uF Optional

NTE153

Abstract: Nte 157 NTE123AP nte129 NTE159M nte123
Contextual Info: BI-POL AR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BV ceo BV ebo &FE T018 28a •c 0.8 BVcbo Amp, Audio to VHF Freq.,

NTE199

Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
Contextual Info: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

NTE1283

Abstract: NTE1284 NTE1285
Contextual Info: N T E ELECTRONICS INC 17E • • DUAL AUDIO PWR AMP, 5W PER CHANNEL, Vco=18V 20-LEAD DIP, SEE DIAG 255 V - NTE1273 m B l S S T 00Q2Q40 0 ■ NTE1278 FRONT VIEW i 20 19 18 17 16 15 14 13 12 11 —Bypass 2 . . Input 2 —Feedback 2 -Hi-Freq Comp 2 —Gnd —Bypass 2

100 amp npn darlington power transistors

Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
Contextual Info: 1995-2012.qxp:QuarkCatalogTempNew 9/11/12 8:56 AM Page 1995 25 Transistors and MOSFETs Silicon Bipolar Transistors Collector to Base V Collector to Emitter (V) Emitter to Base (V) Typical Fwd. Current Gain NPN NPN NPN NPN NPN NPN NPN NPN NPN 0.5 15.0 4.0

123AP

Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
Contextual Info: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge

NTE135A

Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
Contextual Info: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.