NTE211 Search Results

NTE21128

Contextual Info: NTE21128 Integrated Circuit NMOS, 128K 16K x 8 UV EPROM Description: The NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user

Contextual Info: t* MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE8255 40-Lead DI P, See Diag. 299 NMOS, Programmable Preipheral Interface PA3 I PA2 f PA1 § PAO 1 RO| C 5| 1 I 1 Q PC6 0 PC5 n PC4 Q pco Q pci Q PC2 Q PC3 g PBO Bo GND Al A0 PC7 PB1 r a PB2 NTE21128

NTE2117

Contextual Info: NTE2117 Integrated Circuit 16K Dynamic Random Access Memory RAM Description: The NTE2117 is a new generation MOS dynamic random access memory circuit in a 16−Lead DIP type package organized as 16,384 x 1−bit and incorporates advanced circuit techniques designed

NTE211

Abstract: NTE210
Contextual Info: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications

NTE2114

Contextual Info: NTE2114 Integrated Circuit MOS, Static 4K RAM, 300ns Description: The NTE2114 1024–word 4–bit static random access memory is fabricated using N–channel silicon– gate technology. All internal circuits are fully static and therefore require no clocks or refreshing for

NTE65101

Abstract: NTE21128 NTE21256 NTE8255 GJA9
Contextual Info: t* MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE8255 40-Lead DI P, See Diag. 299 NMOS, Programmable Preipheral Interface NTE21128 28-Lead DIP, See Diag. 446 NMOS, 128K EPROM, UV, 250ns NTE21256 16-Lead DIP, See Diag. 248 NMOS, 256k Dynamic RAM (DRAM), 150ns

NTE210

Abstract: NTE211
Contextual Info: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type pack­ age designed for general purpose, medium voltage, medium power amplifier and driver applications

NTE130

Abstract: 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211
Contextual Info: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts BV ebo " fe Pd *T 4 30 Min 8 150 80 (CER) 5 20 Min 50* 1.8 4 80 (CER) 5 20 Min 50* 4 Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) 'c 1.5 BVcbo BVceo 70 70 (CER)

Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q

NTE130

Abstract: NTE199 NPN RF Amplifier NTE241
Contextual Info: BI-POLAR TRANSISTORS Olag. No. •c 0VCBO BVceo BV ebo hFE Pd •t RF Pwr Amp/Driver, CB P0 = 3.5W Min, 27MHz, 12.5V T 039 21a 1.5 70 70 (CEFt) 4 30 Min 8 150 NPN-Si Audio Power Output & Medium Power Switching (Compì to NTE 197) T0220 11 a 7 90 80 (CER)

NTE130

Abstract: NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192
Contextual Info: N T E ELECTRONICS INC S2E D • b M B l S S ^ a D O S S I 6 024 B I N T E TRANSI5TÖ BS-6U PO LA B T —33—01 Maximum Breakdown Voltage Collector to Base Volts) Collector to Emitter (Volts) Emitter Io Basa (Volts) Typical Forward Current Gain Maximum Collector

a5 gnd

Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns