NTE65101 Search Results
NTE65101 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NTE65101 |
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Integrated Circuit 256 x 4- Bit Static Random Access Memory (SRAM) | Original | 30.65KB | 4 | ||
| NTE65101 |
|
Microprocessor and Memory IC Pinouts | Scan | 29.41KB | 1 |
NTE65101 Price and Stock
NTE Electronics Inc NTE65101NMOS 1k Static RAM - 450ns - 22-lead DIP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTE65101 | 1 |
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NTE65101 | 3 |
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NTE65101 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
NTE65101Contextual Info: NTE65101 Integrated Circuit 256 x 4–Bit Static Random Access Memory SRAM Description: The NTE65101 is a CMOS 1024–bit device organized in 256 words by 4 bits in a 22–Lead DIP type package. This device offers ultra low power and fully static operation with a single 5V supply. Separate data inputs and data outputs permit maximum flexibility in bus–oriented systems. Data retention |
Original |
nte65101526-nte65101 | |
NTE65101Contextual Info: NTE65101 Integrated Circuit 256 x 4–Bit Static Random Access Memory SRAM Description: The NTE65101 is a CMOS 1024–bit device organized in 256 words by 4 bits in a 22–Lead DIP type package. This device offers ultra low power and fully static operation with a single 5V supply. Separate data inputs and data outputs permit maximum flexibility in bus–oriented systems. Data retention |
Original |
nte65101 | |
|
Contextual Info: t* MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE8255 40-Lead DI P, See Diag. 299 NMOS, Programmable Preipheral Interface PA3 I PA2 f PA1 § PAO 1 RO| C 5| 1 I 1 Q PC6 0 PC5 n PC4 Q pco Q pci Q PC2 Q PC3 g PBO Bo GND Al A0 PC7 PB1 r a PB2 NTE21128 |
OCR Scan |
nte825540-leadnte2112826-lead+6 | |
NTE65101
Abstract: NTE21128 NTE21256 NTE8255 GJA9
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OCR Scan |
nte825540-leadnte2112828-lead+7 |