J304 Search Results

1SS SOT-23

Abstract: SST5484
Contextual Info: Tem ic J304/305 S e m i c o n d u c t o r s N-Channel JFETs Product Summary Part Number V BR G S s M i n ( V ) gb Min (mS) lo ss Min (mA) J304 -2 to -6 -30 4.5 5 J305 -0.5 to -3 -30 3 1 VGS(off) (V) Features Benefits Applications • Excellent High Frequency Gain: J304,

2N3819 equivalent

Abstract: MAF100 sst4416 die 2n3819 equivalent ic
Contextual Info: NH SERIES DIE N-Channel JFETs The NH Series of n-channel JFETs is designed to provide high-performance amplification, especially at C fS iG c o n ix in c o rp o ra te d NH1CHP* N H 2C H P * NH 3CHP* 2N5484 J305 SST305 2N5485 2N3819 2N5486 2N4416 2N4416A J304

MK128

Abstract: tn 1113 f k
Contextual Info: PRODUCT NO. REV 1 62371-50RRS A REVISIONS ECN DESCRIPTION SKETCHED RELEASED BY DATE M.K B/17/98 J30485 M.K 12/8/'98 65.625±0.5 8.7±0.8 5 a a ra 0 a DIM V NOTE 6 63.65±1 60.75 106.83 N0TE4 5.0 - J 9.2- i 11-19 4— 13.14 21. 03 (12.8) J PC CARD b ic t ii

J304

Abstract: J305
Contextual Info: J304/305 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 −2 to −6 −30 4.5 5 J305 −0.5 to −3 −30 3 1 FEATURES BENEFITS D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz

mpf102 equivalent

Abstract: U1994 MPF*112 MPF112 K1837-18 2N5668-70 2N5555 equivalent siliconix MPF108 2NS484-6
Contextual Info: S Siliconix • VH F/U H F A m plifiers ■ Oscillators ■ M ixers J305 P erform ance Curves N H See Section 5 J304 n-channel JFETs designed fo r . B EN EFITS • Characterized for Operation at 100 and 400 MHz • Low Noise NF = 1.7 dB Typical at 100 MHz

Contextual Info: NH N-Channel JFETs fTSSconix in c o r p o r a t e d DEVICE TYPE PACKAGE Single TO-92 TO-226AA • Single SOT-23 • SST4416 Single TO-72 (TO-2Û6AF) • 2N4416,2N4416A Single Chip • Available as NH1CHP, NH2CHP, NH3CHP 2N5484, 2N5485, 2N5486 J304, J305

Contextual Info: B 60 9 -9 7 J304,J305 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXERS • OSCILLATORS • VHF/UHF AMPLIFIERS A b s o lu te m a x im u m ra tin g s a t T A = 2 S ° C Reverse Gate Source & Reverse Gate Drain Voltage - 30 V Continuous Forward Gate Current

J305

Abstract: J304 J30-5
Contextual Info: J304/305 Siliconix NĆChannel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 -2 to -6 -30 4.5 5 J305 -0.5 to -3 -30 3 1 Features Benefits Applications D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz

J305

Abstract: J304 8080F
Contextual Info: . P erform ance Curves N H See Section 5 • V H F /U H F A m p lifie rs ■ O scillators ■ M ix e rs J305 designed fo r S S ilic o n ix J304 n-channel JFETs B E N E F IT S • Characterized for Operation at 100 and 400 M H z • Low Noise N F = 1.7 dB Typical at 100 M H z

J304

Abstract: J305
Contextual Info: J304/305 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 –2 to –6 –30 4.5 5 J305 –0.5 to –3 –30 3 1 FEATURES BENEFITS APPLICATIONS D Excellent High Frequency Gain: J304,

J304

Abstract: transistor j304 N-Channel RF Amplifier
Contextual Info: J304 J304 N-Channel RF Amplifier • This device is designed for electronic switching applications such as low ON resistance analog switching. • Sourced from process 50. TO-92 1 1. Drain 2. Source 3. Gate NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25°C unless otherwise noted

J304

Abstract: J305
Contextual Info: J304/305 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 –2 to –6 –30 4.5 5 J305 –0.5 to –3 –30 3 1 Features Benefits Applications D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz

s5007

Abstract: J304 J305
Contextual Info: J304/305 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 −2 to −6 −30 4.5 5 J305 −0.5 to −3 −30 3 1 FEATURES BENEFITS D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz

J304

Abstract: J305 To206AF Siliconix N-Channel JFETs to-206af 3J304
Contextual Info: J304/305 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 –2 to –6 –30 4.5 5 J305 –0.5 to –3 –30 3 1 Features Benefits Applications D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz

Contextual Info: J304/305 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 −2 to −6 −30 4.5 5 J305 −0.5 to −3 −30 3 1 FEATURES BENEFITS D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz

J305

Abstract: siliconix jfets J304
Contextual Info: Tem ic J304/305 Siliconix N-Channel JFETs Product Summary Part Number v GS oB (V) J304 - 2 to —6 J305 -0.5 to - 3 gfeMin (mS) IDSS M in(m A) -3 0 4.5 5 -3 0 3 1 ; V<BR)Gss Min (V) Features Benefits Applications • Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 M Hz

J304

Abstract: J305 j305 siliconix SST5484
Contextual Info: J304/305 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number 9 fs Min mS Id s s Min (mA) V GS < o ff) ( V ) V (B R )G S S M i n ( V ) J304 -2 to -6 -3 0 4.5 5 J305 -0 .5 to - 3 -3 0 3 1 FEATURES BENEFITS APPLICATIONS • Excellent High Frequency Gain: J304,

Contextual Info: ^zmi-L-onauctoi l/-\oaue£i, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. J304 N-Channel RF Amplifier • This device is designed for electronic switching applications such as low ON resistance analog switching.

J305

Contextual Info: MOTOROLA Order this document by J304/D SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Am plifiers N-Channel — Depletion J304 J305 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Gate Voltage V DG -3 0 Vdc Gate-Source Voltage VGS -3 0 Vdc Gate Current

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JF E T High Frequency Amplifier N-Channel — Depletion J304 1 DRAIN 2 SOURCE MAXIMUM RATIN G S Symbol Value Unit D rain -G ate Vortage Rating Vd G -3 0 Vdc G ate-Source Voltage VG S -3 0 Vdc 'G 10 mA PD 350 2.8 mW mW/°C

J305

Abstract: J304 SJ304 JFET HIGH FREQUENCY
Contextual Info: J304 J305 CASE 29-04, STYLE 5 TO-92 TO-226AA 1 D ra in MAXIMUM RATINGS Symbol Value Unit Drain-Gate Voltage Rating Vd G -3 0 Vdc Gate-Source Voltage vgs -3 0 Vdc 'G 10 mA Pd 350 2.8 mW mW/°C Tl 300 °C T j- Tstg - 65 to +150 °C Gate C urrent Total Device D issipation

J305

Abstract: bos-800 J304 SMPJ304 SMPJ305
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-60 B-60 01/99 J304, J305 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Mixers ¥ Oscillators ¥ VHF/UHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

J305

Contextual Info: J304 SERIES N-Channel JFETs C fS ilic o n ix in cD rp D rated The J304 Series of n-channel JFETs is designed to provide high-performance amplification, especially at high-frequency. These parts feature low noise, high gain and provide wide bandwidth. For additional design

bf244

Abstract: MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion J304 1 DRAIN 3 GATE 2 SOURCE 1 2 3 CASE 29–04, STYLE 5 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 30 Vdc Gate–Source Voltage