TO206AF Search Results

SD5000N

Abstract: SD5001 sd5001 siliconix SD5001N sd5400 aros SD5400CY SD5000 SILICONIX SD5000
Contextual Info: T e m ic SD5000/5400 Series Siliconix N-Channel Lateral DMOS FETs SD5000I SD5400CY SD5000N SD5401CY SD5001N Product Summary Part Number v BR Ds Min (V) VGS(th) Max (V) SD5000I 20 1.5 SD5000N 20 1.5 SD5001N 10 1.5 SD5400CY 20 1.5 SD5401CY 10 1.5 For applications information see AN301, page 12-33.

Contextual Info: TE LEDYNE COMPONENTS EäE a w b a e D o üü ía4 3 â m g T-31-25 SD2204 SEMICONDUCTOR P-CHANNEL ENHANCEMENT MODE D-MOS FET ORDERING INFORMATION Sorted Chips in Conductive Waffle Pack TO-220AA TO-92 Plastic Package Description SD2204CHP SD2204BD -400V, 7000

to 206af

Abstract: to-206af sd210 206af SD214 rings To206AF
Contextual Info: 3bE D TELEDYNE COMPONENTS ÔIlTbQS 00077^0 S BITSC 'T-lÇ-lÇ WTELEDYNE COMPONENTS SD210 SD211 SD212 SD213 SD214 SD215 N-CHANNEL ENHANCEMENT-MODE DMOS FET SWITCHES FEATURES ABSOLUTE MAXIMUM RATINGS • ■ ■ V ds High Input to Output Isolation—120dB typical

marking code vishay SILICONIX to-236

Abstract: marking code vishay SILICONIX to-72 vishay siliconix code marking to-92
Contextual Info: PAD/JPAD/SSTPAD Series Vishay Siliconix Low-Leakage Pico-Amp Diodes PAD1 PAD5 PAD50 JPAD5 SSTPAD5 JPAD50 SSTPAD100 PRODUCT SUMMARY lR Max pA PAD1 -1 PAD5/JPAD5/SSTPAD5 -5 PAD5Q/JPAD50 -50 SSTPAD100 -100 FEATURES BENEFITS APPLICATIONS • Ultralow Leakage: PAD1 <1 pA

SFs SOT23

Contextual Info: 2 AE D • aTl?bUa QaQb4bM 1 H TELEDYNE CO M PO NENTS - T - 3 5 ~ - 2 S - TZ404 SEMICONDUCTOR _ N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH ORDERING INFORMATION TO-92 Pfaatic Package

SD306DE

Abstract: SD306 lm 2435 t SD304DE TELEDYNE 1413 0007AD
Contextual Info: TELEDYNE COMPONENTS 3bE D • fi^l?bOa 0007AD2 □ « T S C WTELEDYNE COMPONENTS SD304 SD306 N-CHANNEL ENHANCEMENT-MODE DUAL GATE DMOS FET FEATURES ABSOLUTE MAXIMUM RATINGS ■ ■ ■ ■ ■ ■ ■ Normally Off-Enhancement-Mode Operation Dual Gate with Gate Protective Diodes

digital controlled attenuator

Abstract: d82 sot-23 Teledyne Semiconductor CDG4460 DB3 5T
Contextual Info: 2flE » • awboa Doot-3is h m TELEDYNE COMPONENTS CDG4460 SEMICONDUCTOR 6-BIT VIDEO FREQUENCY DIGITAL CONTROLLED ATTENUATOR ORDERING INFORMATION 16-Pln Ceram ic Package | CPG4460J FEATURES APPLICATIONS ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Data Latch

CHIP SM 4108

Abstract: SM 4108 sm 4109 un 5111 IC
Contextual Info: TELEDYNE COMPONENTS 2flE D m öWbQE 0Ü0L.3Q7 7 M CDG2214 S E M IC O N D U C T O R HIGH SPEED ANALOG SWITCH ORDERING INFORMATION 8-Pin Ceramic Dip Package 13 :• — ■- 8-Pin Plastic Dip (Package 8) One SPST Switch Industrial Temperature Range C0G2214BJ

2N4416

Abstract: SST4416
Contextual Info: Tem ic 2N4416/2N4416A/SST4416 Semiconductors N-Channel JFETs Product Summary P art Number V GS<off V) V (B R )G S S M i n ( V ) 2N 4416 -< 6 -3 0 2N 4416A - 2 .5 t o - 6 SST4416 -£ 6 g ft M in (mS) lo ss (mA) 4 .5 5 -3 5 4 .5 5 -3 0 4 .5 5 Features Benefits

Contextual Info: TELEDYNE COMPONENTS 5ñE D • aW bOH . QOat.4aM O T-29 -25 SD1202 SEMICONDUCTOR_ N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS FETs ORDERING INFORMATION Sorted Chips In Waffle Pack TO-226AA TO-92 Package

s t u 309d

Abstract: AMI Semiconductor socket 771 C451 4308B TLC 771
Contextual Info: SÖE D T EL ED Y N E COMPONENTS m Ö T 1 7 tü £ ÜQGb 3 Q I b CDG308, CDG309 CDG4308, CDG4309 SE M IC O N D U C T O R QUAD MONOLITHIC SPST CMOS/D-MOS ANALOG SWITCHES ORDERING INFORMATION s o -« S u ite * Mount Pacfcìa* O rw * b tlc tt mrtrc , Gomm ^W Tefnp.FÄng«

ss 7941

Contextual Info: EÒE TELEDYNE COMPONENTS D a ii7 b a a — OGOb4Qc] 4 • r T-29-25 SD1106 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION SD1106CHP SD1106DD SD1106AD Sorted Chips In Waffte Pack TO-2Q6AA TO-18 Package TO-237 Packaae ' FEATURES

SD215DE-2

Abstract: SD215DE vishay
Contextual Info: SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMM ARY Part Number V(BH)DS M in (V) v GS(th) Max (V) rDS(on) Max (Q ) Crss Max (pF) SD211DE-2 30 1.5 4 5 V GS= 1 0 V 0.5 2 SD213DE-2

Contextual Info: DMCD N-Channel _ Depletion-Mode MOSFET in c o r p o r a te d DEVICE TYPE PACKAGE Single TO-72 TO-206AF • SD2100 Single Chip • Available as DMCD1CHP TYPICAL CHARACTERISTICS Depletion Mode - Drain Current & On-Reslstance vs. Gate-Source Cutoff Voltage

JR 3610

Abstract: RT 083 206af 44464
Contextual Info: TELEDYNE COMPONENTS - 2ÖE D Mi ÛTiTtOE 000 ^40^ b • ■ -T-29-25 — cfTlHJlß2l0\7zi V P 0 8 0 8 , V P 1 00 8 SEMICONDUCTOR P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Sorted CWp* tn Wsffla Pack TO-226AA (TO-82 Plastic Package

Contextual Info: jre s ft 3N163 SERIES P-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY B O T T O M VIEW TO -7 2 TO-206AF PART NUM BER V (BR|DSS 3N163 -40 250 -50 3N164 -30 300 -50 "W 1 • d (A) 1 2 3 4 Performance Curves: MRA DRAIN G ATE SUBSTR ATE, C A S E SO URCE

SST4118

Abstract: 2N4117A 2N4118A 2N4119A PN4117A PN4118A PN4119A SST4117 SST4119
Contextual Info: 2N/PN/SST4117A Series Vishay Siliconix N-Channel JFETs 2N4117A PN4117A SST4117 2N4118A PN4118A SST4118 2N4119A PN4119A SST4119 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 4117 –0.6 to –1.8 –40 70 30 4118 –1 to –3

37654

Abstract: PAD5 PAD Series JPAD50 PAD50 SSTPAD100 diode pico-amp PAD1 sstpad5
Contextual Info: PAD/JPAD/SSTPAD Series Low-Leakage Pico-Amp Diodes PAD1 PAD5 PAD50 JPAD5 JPAD50 SSTPAD5 SSTPAD100 Product Summary Part Number IR Max pA PAD1 –1 PAD5/JPAD5/SSTPAD5 –5 PAD50/JPAD50 –50 SSTPAD100 –100 Features Benefits Applications D Negligible Circuit Leakage Contribution

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

2N3307 MOTOROLA

Abstract: 2N3307 2N3308 GE-17
Contextual Info: M O T OR OL A SC X S T R S /R F la E ° I b3t?2S l1 000^351 fe, | 2N3307 2N3308 CASE 20-03, STYLE 10 TO-72 TO-206AF M A X IM U M RATINGS Symbol 2N3307 2N3308 Unit VCEO 35 25 Vdc Colfector*Emitt6r Voltage Vc es 40 30 Vdc Collector-Base Voltage VCBO 40 30

2N3909

Abstract: 2N3909A
Contextual Info: MOTORGLA SC XSTRS/R F 12E 0 I b3b?SS4 OQflbblb 3 | 2N3909, A CASE 20-03, STYLE 5 TO-72 TO-206AF 3 Drain MAXIMUM RATINGS Symbol Value Drain-Source Voltage Rating Vd S -2 0 Vdc Drain-Gate Voltage Vd G -2 0 Vdc Vg SR 20 Vdc Reverse Gate-Source Voltage Forward Gate Current

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

2N4416 equivalent

Abstract: 2n4416 transistor junction fet high frequency n-channel 2N4416 2N4416A
Contextual Info: 2N4416A 2N4416A SMALL SIGNAL N–CHANNEL J–FET THAT IS DESIGNED TO PROVIDE HIGH PERFORMANCE AMPLIFICATION AT HIGH FREQUENCIES MECHANICAL DATA Dimensions in mm inches 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) FEATURES

BUZ901P

Abstract: BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410
Contextual Info: STI Type: BUZ341 Notes: Breakdown Voltage: 200 Continuous Current: 33 RDS on Ohm: 0.07 Trans Conductance Mhos: 15 Trans Conductance A: 21 Gate Threshold min: 2.1 Gate Threshold max: 4.0 Resistance Switching ton: 60 Resistance Switching toff: 680 Resistance Switching ID: 3.0