J305 Search Results

1SS SOT-23

Abstract: SST5484
Contextual Info: Tem ic J304/305 S e m i c o n d u c t o r s N-Channel JFETs Product Summary Part Number V BR G S s M i n ( V ) gb Min (mS) lo ss Min (mA) J304 -2 to -6 -30 4.5 5 J305 -0.5 to -3 -30 3 1 VGS(off) (V) Features Benefits Applications • Excellent High Frequency Gain: J304,

2N3819 equivalent

Abstract: MAF100 sst4416 die 2n3819 equivalent ic
Contextual Info: NH SERIES DIE N-Channel JFETs The NH Series of n-channel JFETs is designed to provide high-performance amplification, especially at C fS iG c o n ix in c o rp o ra te d NH1CHP* N H 2C H P * NH 3CHP* 2N5484 J305 SST305 2N5485 2N3819 2N5486 2N4416 2N4416A J304

J305

Contextual Info: J305 N-Channel RF Amplifier • • This device is designed primarily forelectronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted

J304

Abstract: J305
Contextual Info: J304/305 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 −2 to −6 −30 4.5 5 J305 −0.5 to −3 −30 3 1 FEATURES BENEFITS D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz

mpf102 equivalent

Abstract: U1994 MPF*112 MPF112 K1837-18 2N5668-70 2N5555 equivalent siliconix MPF108 2NS484-6
Contextual Info: S Siliconix • VH F/U H F A m plifiers ■ Oscillators ■ M ixers J305 P erform ance Curves N H See Section 5 J304 n-channel JFETs designed fo r . B EN EFITS • Characterized for Operation at 100 and 400 MHz • Low Noise NF = 1.7 dB Typical at 100 MHz

Contextual Info: NH N-Channel JFETs fTSSconix in c o r p o r a t e d DEVICE TYPE PACKAGE Single TO-92 TO-226AA • Single SOT-23 • SST4416 Single TO-72 (TO-2Û6AF) • 2N4416,2N4416A Single Chip • Available as NH1CHP, NH2CHP, NH3CHP 2N5484, 2N5485, 2N5486 J304, J305

Contextual Info: B 60 9 -9 7 J304,J305 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXERS • OSCILLATORS • VHF/UHF AMPLIFIERS A b s o lu te m a x im u m ra tin g s a t T A = 2 S ° C Reverse Gate Source & Reverse Gate Drain Voltage - 30 V Continuous Forward Gate Current

J305

Abstract: J304 J30-5
Contextual Info: J304/305 Siliconix NĆChannel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 -2 to -6 -30 4.5 5 J305 -0.5 to -3 -30 3 1 Features Benefits Applications D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz

J305

Abstract: J304 8080F
Contextual Info: . P erform ance Curves N H See Section 5 • V H F /U H F A m p lifie rs ■ O scillators ■ M ix e rs J305 designed fo r S S ilic o n ix J304 n-channel JFETs B E N E F IT S • Characterized for Operation at 100 and 400 M H z • Low Noise N F = 1.7 dB Typical at 100 M H z

J304

Abstract: J305
Contextual Info: J304/305 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 –2 to –6 –30 4.5 5 J305 –0.5 to –3 –30 3 1 FEATURES BENEFITS APPLICATIONS D Excellent High Frequency Gain: J304,

J304

Abstract: J305
Contextual Info: J304/305 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 –2 to –6 –30 4.5 5 J305 –0.5 to –3 –30 3 1 Features Benefits Applications D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz

s5007

Abstract: J304 J305
Contextual Info: J304/305 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 −2 to −6 −30 4.5 5 J305 −0.5 to −3 −30 3 1 FEATURES BENEFITS D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz

J304

Abstract: J305 To206AF Siliconix N-Channel JFETs to-206af 3J304
Contextual Info: J304/305 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 –2 to –6 –30 4.5 5 J305 –0.5 to –3 –30 3 1 Features Benefits Applications D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz

Contextual Info: J304/305 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 −2 to −6 −30 4.5 5 J305 −0.5 to −3 −30 3 1 FEATURES BENEFITS D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz

J304

Abstract: J305 j305 siliconix SST5484
Contextual Info: J304/305 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number 9 fs Min mS Id s s Min (mA) V GS < o ff) ( V ) V (B R )G S S M i n ( V ) J304 -2 to -6 -3 0 4.5 5 J305 -0 .5 to - 3 -3 0 3 1 FEATURES BENEFITS APPLICATIONS • Excellent High Frequency Gain: J304,

J305

Contextual Info: J305 N-Channel RF Amplifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted

J305

Contextual Info: MOTOROLA Order this document by J304/D SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Am plifiers N-Channel — Depletion J304 J305 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Gate Voltage V DG -3 0 Vdc Gate-Source Voltage VGS -3 0 Vdc Gate Current

J305

Abstract: J304 SJ304 JFET HIGH FREQUENCY
Contextual Info: J304 J305 CASE 29-04, STYLE 5 TO-92 TO-226AA 1 D ra in MAXIMUM RATINGS Symbol Value Unit Drain-Gate Voltage Rating Vd G -3 0 Vdc Gate-Source Voltage vgs -3 0 Vdc 'G 10 mA Pd 350 2.8 mW mW/°C Tl 300 °C T j- Tstg - 65 to +150 °C Gate C urrent Total Device D issipation

J305

Abstract: bos-800 J304 SMPJ304 SMPJ305
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-60 B-60 01/99 J304, J305 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Mixers ¥ Oscillators ¥ VHF/UHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

j31a

Abstract: LCD-S401C52TR
Contextual Info: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. LCD -S401C52TR A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11149. DATE D2.0B.07 50,80 [E.000] 45.72 [1.800] V A e .so co .n o : G.35 [0.250: MAX, 40 1.00 [0.039] III III III III III III n il I ZI o CD CHARACTERISTICS

2n5248

Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
Contextual Info: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640

motorola D213 user guide

Abstract: SEMICONDUCTOR J601 eeprom u505 AD9226 J306 J307 J406 sine wave inverter schematic and firmware CR502 vr301 potentiometer
Contextual Info: High Speed ADC USB FIFO Evaluation Kit HSC-ADC-EVALB FEATURES FUNCTIONAL BLOCK DIAGRAM Buffer memory board for capturing digital data used with high speed ADC evaluation boards to simplify evaluation 32 kB FIFO depth at 133 MSPS upgradable Measures performance with ADC Analyzer

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage