MRF511 Search Results

CHN 645

Abstract: transistor chn 115 chn 726 MRF511 chn 706 CHN 612 CHN 851 chn 625 CHN 650 transistor chn 726
Contextual Info: MRF511 SILICON l ’h e R ,F L i n e HIGH FREQUENCY TRANSISTOR NPN S IL IC O N NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed specifically for broadband applications requiring low distortion characteristics and noise figure. Specified for use in C A T V applications.

Contextual Info: I MOTOROLA SC XSTRS/R 4 bE F b3b 7 E SM QGc1 4 7 m D MOTOROLA T T '^ > 3 - o 5 •I SEMICONDUCTOR I TECHNICAL DATA MRF511 The RF Line H IG H F R E Q U E N C Y T R A N S IS T O R N P N S IL IC O N H IG H F R E Q U E N C Y T R A N S IS T O R NPN SILICON . designed s p e c ific a lly fo r b ro a d b an d a p p lic a tio n s re q u irin g lo w

Contextual Info: MRF511 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)35 I(C) Max. (A)250m Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)15

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2N5179

Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

MRF965

Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

2N5109 motorola

Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­

2N3866 MOTOROLA

Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

2N5109 motorola

Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

900 mhz oscillator using bfr91 transistor

Abstract: Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

2n4427 MOTOROLA

Abstract: MRF536 motorola 2N4427 Y parameters of transistors 2N3948 mrf901 2n5160 MRF586 BFY90 MOTOROLA 2N5583
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

LM1011N

Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
Contextual Info: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

CHN 703

Abstract: c 2665 transistor MRF511
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T he RF L ine HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICO N . . . designed s p e c ific a lly fo r broadband a p p lica tio n s re q u irin g low d is to rtio n ch a ra c te ristic s and noise fig u re .

MRF511

Abstract: 38092 MRF517 SILICON DICE motorola
Contextual Info: 34 M O T O R O L A SC -CDIODES/OPTO} 6367255 M OT O R O L A SC DE I b 3 b 7255 □ 03fl0'i E 0 ~ f ~ 34 c D IO D E S /O P TO SILICON RF TRANSISTOR DICE (continued) 38092 7~~3 MRFC517 DIE NO. — NPN LINE SOURCE — RF502.95 m This die provides performance equal to or better than that of

jrc386d

Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Contextual Info: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50

317A-01

Abstract: 2N5583 MRF965 2N5109 motorola 2N5943 244A-01 MRF962 MRF586 BFR90 application BFR91
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued CATV, MATV, and Class A Linear Transistors The devices listed below are excellent for Class A linear C A TV/M ATV applications and are listed according to increasing gainbandwidth (fj) . More information concerning the device for your specific linear design needs can be obtained through your local

2n5835

Abstract: 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF502 MRF965 low noise transistor cross motorola 2N3866 2n5160
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

MRF536

Abstract: MRF515 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters s-parameter 2N4427 MRF227 MRF229 MRF237
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­