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    2N5160 Search Results

    2N5160 Datasheets (10)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N5160
    		Motorola European Master Selection Guide 1986 Scan PDF 222.04KB 3
    2N5160
    		Motorola PNP Silicon Power Transistor Scan PDF 216.18KB 4
    2N5160
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 35.99KB 1
    2N5160
    		Unknown Semiconductor Master Cross Reference Guide Scan PDF 113.25KB 1
    2N5160
    		Unknown Shortform Transistor Datasheet Guide Short Form PDF 95.52KB 1
    2N5160
    		Unknown Vintage Transistor Datasheets Scan PDF 55.77KB 1
    2N5160
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 103.82KB 1
    2N5160
    		Unknown Transistor Shortform Datasheet & Cross References Scan PDF 89.13KB 1
    2N5160
    		Unknown Basic Transistor and Cross Reference Specification Scan PDF 50.38KB 1
    2N5160
    		Unknown Shortform Transistor PDF Datasheet Short Form PDF 170.91KB 1
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    2N5160 Price and Stock

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    New Jersey Semiconductor 2N5160

    PNP Silicon RF Power Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N5160 6,568 1
    • 1 $27.60
    • 10 $25.39
    • 100 $22.36
    • 1000 $22.36
    • 10000 $22.36
    		Buy Now

    New Jersey Semiconductor Products Inc 2N5160

    TRANSISTOR,BJT,PNP,40V V(BR)CEO,400MA I(C),TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5160 5,254
    • 1 $29.90
    • 10 $29.90
    • 100 $29.90
    • 1000 $23.00
    • 10000 $23.00
    		Buy Now

    onsemi 2N5160

    TRANSISTOR,BJT,PNP,40V V(BR)CEO,400MA I(C),TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5160 22
    • 1 $52.00
    • 10 $52.00
    • 100 $44.20
    • 1000 $44.20
    • 10000 $44.20
    		Buy Now

    2N5160 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5160

    Contextual Info: 2N5160 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5160 Availability Online Store


    Original     		2n5160stv3208lm3909n PDF

    2N5160

    Abstract: 2N5160 MOTOROLA MRF5160 MRF*5160 MRF5160HX 2N3866 MRF5160HXV J0240 RIA 39 transistor MRF516
    Contextual Info: I MOTOROLA SC XSTRS/R F 4 bE b 3 b 7254 D 00=14075 7 MOTOROLA m o T b " P 3 3 - I 7 - • SEMICONDUCTOR TECHNICAL DATA 2N5160 T h e R F Line If = -4 0 0 m A POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR P N P S ILIC O N . . . designed fo r am plifier, frequency m ultiplier or oscillator applica­


    OCR Scan     		b3b72542n51602n3866mil-s-19500+10mrf5160hxmrf51300-mhz2n5160 motorolamrf5160mrf*5160mrf5160hxvj0240ria 39 transistormrf516 PDF

    transistor rc 3866

    Abstract: rc 3866 transistor 3866 s t 3866 power transistor Transistor 2N5160 transistor t 3866 2N5160 t 3866 transistor
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5160 T h e R F Line 1C = - 4 0 0 mA POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR PNP SILICON . . . designed fo r am plifier, freq u e n cy m ultiplier or o scillato r applica­ tion s in m ilitary and industrial equipm ent. Su itab le fo r use as C lass A,


    OCR Scan     		2n5160transistor rc 3866rc 3866transistor 3866 s+4t 3866 power transistortransistor 2n5160transistor t 3866t 3866 transistor PDF

    2N5160

    Contextual Info: me. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 2N5160 The RF Line PNP SILICON AMPLIFIER TRANSISTOR PNP SILICON RF POWER TRANSISTORS . . . designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment, Suitable for use as Class A,


    Original     		2n51602n3866400-mhz-30nh+1-10pf PDF

    2N5160

    Contextual Info: M O T O R O L A SC -CXSTRS/R F> 6 3 6 725 4 MOTOROLA SC ST DT|h3b72SM 0D7TMST 0 89D 79459 <XSTRS/R F 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MXR5160 Die Source Same as 2N5160 RF TRANSISTOR PNP SILICON M A XIM U M RATINGS Symbol Value Collector-Emitter Voltage


    OCR Scan     		f3672542n5160 PDF

    2N5160

    Abstract: MXR5160 2N5160 MOTOROLA
    Contextual Info: M O T O R O L A SC -CXSTRS/R F> "ñ^ 6 3 6 7 2 5 4 M O T O R O L A SC CXSTRS/R F DË_|h3b72SM 0D7TMST 0 89D 7 9 4 5 9 D7v?/-2 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MXR5160 Die Source Sam e a s 2N5160 RF TRANSISTOR PNP SILICON M AXIM UM RATINGS Sym bol Value


    OCR Scan     		h3b72smmxr51602n51602n5160 motorola PDF

    2N3866 application note

    Abstract: transistor 2n2369 LT1016 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8 Transistor 2N3866
    Contextual Info: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies


    Original     		lt1671lt1394lt1016lt1116+8lt17201671fs2n3866 application notetransistor 2n2369lt1671cms8lt1671cs8lt1671is8transistor 2n3866 PDF

    rosemount 118mf

    Abstract: OPTO MOS SWITCH OFM 2N5160 equivalent LT1001 KELVIN-VARLEY DIVIDER ultronix 105A 2n5160 OFM-1A 2N5160 ss LT301A
    Contextual Info: LT1001 Precision Operational Amplifier DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire


    Original     		lt1001lt1001clt1001am152mm+10254mmrosemount 118mfopto mos switch ofm2n5160 equivalentkelvin-varley dividerultronix 105a2n5160ofm-1a2n5160 sslt301a PDF

    1N148 diode

    Abstract: 1N148 2N160 LF155A exponential Voltage-to-Frequency Converter ic lf351 as operational amplifier ic u440 ad611 Power AMPLIFIER 6012 "High Speed Amplifiers"
    Contextual Info: LT1055/LT1056 Precision, High Speed, JFET Input Operational Amplifiers U DESCRIPTION FEATURES • ■ ■ ■ Guaranteed Offset Voltage –55°C to 125°C Guaranteed Drift Guaranteed Bias Current 70°C 125°C Guaranteed Slew Rate 150µV Max 500µV Max 4µV/°C Max


    Original     		lt1055/lt1056150pa500paamplifi81+11254mm1n148 diode1n1482n160lf155aexponential voltage-to-frequency converteric lf351 as operational amplifieric u440ad611power amplifier 6012high speed amplifiers PDF

    Tektronix 2245a

    Abstract: 2M3866 s2 umi 250v 1a Tektronix 2246a s 2 umi 1A 130 degree 250V 2N2369 transistor pulse generator PNP TRANSISTOR 1A 60V s 2 umi 1A 250V LARE RTL 1000 AVS Ralph Morrison Wiley
    Contextual Info: um A pplication Note 47 August 1991 TECHNOLOGY High Speed Amplifier Techniques A Designer's Companion for W ideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note


    OCR Scan     		an47-131an47-132tektronix 2245a2m3866+8s2 umi 250v 1atektronix 2246as 2 umi 1a 130 degree 250v2n2369 transistor pulse generatorpnp transistor 1a 60vs 2 umi 1a 250vlare rtl 1000 avsralph morrison wiley PDF

    4013 flipflop

    Abstract: oscilloscope service manual teledyne transistor cross reference lt317 ad639 CA3096 "cross reference" 6012 DAC CA3096 ltc1043 2N2369
    Contextual Info: rru m i Application Note 14 TECHNOLOGY March 1986 Designs for High Performance Voltage-to-Frequency Converters Jim W illiam s Monolithic, modular and hybrid technologies have been The positive input voltage causes A1, the servo amplifier, used to implement voltage-to-frequency converters. A


    OCR Scan     		12-bitan-134013 flipfloposcilloscope service manual+8teledyne transistor cross referencelt317ad639ca3096 "cross reference6012 dacca3096ltc10432n2369 PDF

    Datasheet of 7490 IC decade counter

    Abstract: VDR-307 SCO-106 ic 7490 pin diagram ic 7490 Decade Counter data sheet 7490 Decade Counter internal diagram of 7490 IC IC sine wave generator for 1Hz-to-100MHz Julie Research Labs SP656
    Contextual Info: Application Note 9 August 1986 Application Considerations and Circuits for a New Chopper-Stabilized Op Amp Jim Williams A great deal of progress has been made in op amp DC characteristics. Carefully executed designs currently available provide sub-microvolt VOS ΔT drift, low bias currents


    Original     		sp656an9-20datasheet of 7490 ic decade countervdr-307+7sco-106ic 7490 pin diagramic 7490 decade counter data sheet7490 decade counterinternal diagram of 7490 icic sine wave generator for 1hz-to-100mhzjulie research labs PDF

    74H123

    Abstract: 74hc123 Spice LT1597 darlington array with clamp diode 2A AN7418 tektronix 454 service manual 2N3440 HARRIS SEMICONDUCTOR 74hc163 spice 74hc123 AN7421
    Contextual Info: Application Note 74 July 1998 Component and Measurement Advances Ensure 16-Bit DAC Settling Time The art of timely accuracy Jim Williams Introduction Instrumentation, waveform generation, data acquisition, feedback control systems and other application areas are


    Original     		16-bitan74-47an74-48an74f+1074h12374hc123 spicelt1597darlington array with clamp diode 2aan7418tektronix 454 service manual2n3440 harris semiconductor74hc163spice 74hc123an7421 PDF

    2N5179

    Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
    Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


    OCR Scan     		17a-0105a-01gain-200mrf502+14bfx89bfy902n51792n2857mrf904mrf914high gain pnp rf transistor2n49572n3866 motorola2n2857 motorolamotorola 2n5179motorola european master selection2n4958y parameters of transistors PDF

    Lt1016

    Abstract: sn1016 lt1016 equivalent LT1220
    Contextual Info: LT1016 UltraFast Precision 10ns Comparator FEATURES • ■ ■ ■ ■ ■ U ■ DESCRIPTIO UltraFastTM 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking


    Original     		lt1016t1016lt1711/lt1712lt1713/lt1714+7lt1715150mhzlt1719/lt1720/lt1721sn10161016fcslt1016 equivalentlt1220 PDF

    2N5109 motorola

    Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
    Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­


    OCR Scan     		17a-0105a-01mrf536mrf2369+14mrf57144a-012n5947mrf5112n6603mrf9622n5109 motorolabfr90 applicationmrf931mrf586244a-01mrf961mrf5172n5943 PDF

    2N3866 MOTOROLA

    Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
    Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


    OCR Scan     		17a-0105a-012n58292n5031+14mrf904mrf571rf572/mrf23692n3866 motorola2n3866 motorola s parameters2n517910 ghz pnp transistornpn uhf transistor 2n51792n2857 motorolamotorola 2n51792n2857rf power transistor npn, motorola2n4957 PDF

    2N3553 motorola

    Abstract: MRF229 MRF581 mrf237 MOTOROLA MOTOROLA SELECTION 2n3553 MRF314A 2N3866 MOTOROLA motorola mrf237 MRF227 MRF340
    Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers T he transistors listed in th ese tab les a re specified for operation in C lass C RF p ow er a m p lifie r circuits. The tables a re arrang ed by increasing frequency of operation first, then by increasing output pow er.


    OCR Scan     		mrf229mrf6042n4427mrf553+15317d-01mrf6072n62552n3553mrf237mrf2072n3553 motorolamrf581mrf237 motorolamotorola selection 2n3553mrf314a2n3866 motorolamotorola mrf237mrf227mrf340 PDF

    2N5109 motorola

    Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
    Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan     		17a-0105a-01mrf58744a-01+162n39592n39602n5835mm4049mrf9142n59432n5109 motorolabfy90 motorola2n5583mrf965bfr91 motorolamrf586motorola 2n51792n4427 motorolamacro-x ceramic2n3866a PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845 PDF

    SCO-106

    Abstract: of CMOS IC 74c90 RCA 2N3866 Julie Research Labs LT318A AD650 MTR-51 ICL7652 LM11 LTC1052
    Contextual Info: ~"""""Llnet\R .L, Application Note 9 TECHNOLOGY~- Application Considerations and Circuits for a New Chopper-Stabilized Op Amp Jim Williams A great deal of progress has been made in op amp DC characteristics. Care'lully executed designs currently available provide sub-microvolt Vas ~ T drift, low bias


    Original     		sp656an9-20sco-106of cmos ic 74c90+8rca 2n3866julie research labslt318aad650mtr-51icl7652lm11ltc1052 PDF

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		powes3666mrf38662n28572n3866+162n5943mrf904mrf5712n49582n31602n55832n4427 equivalent bfr91bfr90 equivalent2n5503mra1600-30tpv-595a2n3553 equivalentmrf477 equivalentmra0500-19l2n6084 equivalentmotorola transistor mrf239 PDF

    ta143

    Abstract: Ferronics 21-110J AN47-127 AN47 AN-4745 AN47-48 an47fa AN47-93 Tektronix P6056 TELEDYNE PHILBRICK logarithmic
    Contextual Info: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.


    Original     		gltan47an47-129an47-130an47-131+11an47-132an47fata143ferronics 21-110jan47-127an47an-4745an47-48an47-93tektronix p6056teledyne philbrick logarithmic PDF

    LT1220

    Contextual Info: LT1016 UltraFast Precision 10ns Comparator Features n n n n n n n Description UltraFast 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking


    Original     		lt1016100mhzlt1715150mhz+2lt1719/lt1720/lt1721lt1220 PDF