2N160 Search Results

2N1603A

Abstract: GE C20C GE C220C Motorola diodes IR-106C1 2N393 2N4171 C222C AEG TO2 MCR106-5
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 S107C2 n07C1 C106C C106C1 C106C3 S106C1 S106C2 n06C1 MCR106-5 IR106C1 :~~g~g~ 15 20 IR106C4 IR106C41 Cl0SC Cl0BC Cl0BC STY3004 2N1603A 2Nl776 ~~~H~~ 25 30 2Nl776B SN503 SNS03 TIC10SC Cl0SCl Cl0SCl Cl0SCl

T107A1

Abstract: SF3842 SF3841 2N4177 2n3269 2N4153 SH5813 2N1601 ncr100-8 ge c106A4
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 2N3273 C107A2 C107A4 C107A C107G C106A2 C106A4 SF2R5842 S2060A S2061A NCM100C 2N1601 NCR1008 S1003LS1 C10BA2 C10BA2 C10BA4 C10BA4 S1003LS2 S1003LS3 SN301S

S10601

Abstract: C10601 T10601 nec 3S4M S4004F1 2N2454 GE C150 s20600 S04070H S4003LS3
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number SeRs, VDRM 5 10 S04050H S04070H S04100H S20600 S2061 0 NCM400C 2N1604 NCR400B S4003LS1 C10802 g~g:g~ 15 20 C10804 C10804 S4003LS2 S4003LS3 3P4J 3P4J-Z CR3CM8 CR3CM8 ~~~;g~6 25 30 TXF4005 TYF4005 OR03E C150

2n2619

Contextual Info: jG/nitronicr discrete devices SEMICONDUCTORS Semitronics Corp. silicon rectifiers cont’d PHASE CONTROL SCR’s TYPE JE D E C 7.4 TO 25 AMPERES C10 C11 C15 C220-2 C126 C36 C37 2N1770A 77A 2N1770-78 2N2619 2N1600A2N1604A - - 2N1842-50 - 25-400 25-600 25-600

Contextual Info: \Pioauaii, Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 2N1600 SILICON PNPN CONTROLLED RECTIFIER maximum ratings — all temperatures Indicated are stud temperatures VFI,I) V, I, lf i,

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N148 diode

Abstract: 1N148 2N160 LF155A exponential Voltage-to-Frequency Converter ic lf351 as operational amplifier ic u440 ad611 Power AMPLIFIER 6012 "High Speed Amplifiers"
Contextual Info: LT1055/LT1056 Precision, High Speed, JFET Input Operational Amplifiers U DESCRIPTION FEATURES • ■ ■ ■ Guaranteed Offset Voltage –55°C to 125°C Guaranteed Drift Guaranteed Bias Current 70°C 125°C Guaranteed Slew Rate 150µV Max 500µV Max 4µV/°C Max

DTS108

Abstract: L30C DTS103 DTS106 2SC5250 2sd222 UP 130 L10B
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2N1674

Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

2N1103

Abstract: 2SC167 2SC166 CK26A CI44 BC412 KIS434 NS435 NS436 NS438
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

transistor b1154

Abstract: B1154 10PE1 2N2962 2N1103 ASY13-2 GET116 2SC5220 AFY11 ASY12
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

GT 32 DIAC

Abstract: TAG 203 350 2n50b tag 627 800 tag thyristoren 2N3936 2N3937 2N1601 tag 6 600 TO-48C
Contextual Info: Thyristoren Silicon Controlled Rectifiers TYP* *8=V .V DRM RRM BRX 44.BRX 49 BRX 50.BRX 56 TAG 50.TAG 57 BR 103 TAG 60P TAG 60A TAG 06-* BR 203 TAG 64F TAG 64A TAG 1-* TAG 2-* BTX 30-* TAG 520-* TAG 521~* TAG 605-* TAG 606-* TAG 106 BRX.61.BRX66 TAG 610-*

D634 transistor

Abstract: 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2N5036

Abstract: A1381 transistor 2N5034 2N5035 156-043 2SD323 2N5034 package B170000 B170001 S8002
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2N1601

Abstract: 2N1604 2N3228 2N1771A 2N2325 2N3525 2N2324A 2N2325A 2N2326 2N2326A
Contextual Info: Silicon Controlled Rectifiers Cont. Maximum Trigger Characteristics Type Volts IG T (m A) V gt (V) Discrete Devices Surge Current (A) RMS On-State Current IT R M S (A) Package 2N 2324A 100 0.02 0.8 15 1.6 2 N 2325 150 0.2 1.0 15 1.6 T O -3 9 2N 2325A 150

2SA143

Abstract: transistor 2sa143 T01A 2SA298 2SA327 CK16A 2N640 2SA297 2SA80 2V465
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N1103

Abstract: A608 transistor pnp 2SC631 2SC632 2N3604 FV918 2SC167 2SC166 2N2161 2N1082
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

TRIAC zo 607 MA

Abstract: ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760
Contextual Info: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Contextual Info: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N1602

Abstract: 2n1649 2N893 2N6241 2nu8 2N6401 2N2679 2n4327 2N3228 2n4146
Contextual Info: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T '- ä $ - 'O l 3 discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current Maximum Junction Temperature CC Mw. DC Cate Trinar Current

OC140

Abstract: 2S0187 SK3011 Low-Power Germanium NPN TR182 2N43 2S030 2n357a ASY73
Contextual Info: LOW-POWER GERMANIUM NPN Item Number Part Number Manufacturer Y BR CBO hFE (V) Ic Max (A) fT (Hz) C bo Max (F) ICBO Max V(BR)CEO Po Max (A) (V) (W) Derate at (WrC) Tope, 2.5m 2.8m 2.5m 100 J 75 J 75 J 100 J 1.lm 4.0m 2.5m 2.0m 60A 75 A 100 J 100 J 100 J TO• 1

1N148 diode

Abstract: LF351 op-amp D/A 2N160 Power AMPLIFIER 6012 LT1056CS8 2N5160 equivalent 747 op amp datasheet lt 864 LM329 LF351 op-amp application
Contextual Info: LT1055/LT1056 Precision, High Speed, JFET Input Operational Amplifiers U DESCRIPTIO FEATURES • ■ ■ ■ ■ The LT 1055/LT1056 JFET input operational amplifiers combine precision specifications with high speed performance. Guaranteed Offset Voltage: 150µV Max

SCR C220D

Abstract: scr C10 C220B C220D C126M C15U C123 SCR 2n1602 c220f C220E
Contextual Info: jemitronicr discrete devices SEMICONDUCTORS Semitronics Corp. silicon rectifiers cont’d PHASE CONTROL SCR’s TYPE JEOEC 7.4 TO 25 AMPERES C10 C11 C15 C220-2 C126 C36 C37 2N1770A 77A 2N 1770-78 2N2619 2N 2N1604A - - 2N 1842-50 - 25*400 25-600 25-600