2N2326 Search Results

2N2326

Contextual Info: 2N2326 SILICON CONTROLLED RECTIFIER SCR DESCRIPTION: The 2N2326 is Designed for Medium Current General Purpose Power Control Applications. PACKAGE STYLE TO- 39 0.350- 0.370 (8.890- 9.398} 0.315- 0.335 MAXIMUM RATINGS It 1-6 A (r m s ) @ Te - 85 0C It 1.0 A

2N2323A

Abstract: 2n2326 2N2329
Contextual Info: Silicon Controlled Rectifier 2N2323, 2N2324, 2N2326, 2N2328 & 2N2329 2N2323S, 2N2324S, 2N2326S, 2N2328S & 2N2329S 2N2323A, 2N2324A, 2N2326A & 2N2328A, 2N2329A 2N2323AS, 2N2324AS, 2N2326AS, 2N2328AS, 2N2329AS Features • Available in JAN, JANTX and JANTXV

2n1596

Abstract: 2N1595 2N2325 2N1599 2N2322 2N2323 2N2324 CS18B CS18BZ 2N1595A
Contextual Info: SCRs Continued IT (AMPS) 1.0 o 1.6 @ TC ( C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 CASE TO-18 TO-39 VRRM (VOLTS) 25 2N2322 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 150 200 2N2325 CS18B CS18BZ 2N1597 2N1597A 250 2N2326 2N2327 300 2N1598 2N1598A

JANTX 2N2326

Abstract: 2N2326
Contextual Info: 2N2326 Dimensions in mm inches . Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 0.41 (0.016) 0.53 (0.021)

2N2324

Abstract: 2N2322 2N2329 2N2323 semiconductor 2N2323 2N2325 "Silicon Controlled Rectifier" 2 amps 2N2326 semiconductor case marking 16 2N2328
Contextual Info: 2N2322 2N2323 2N2324 2N2325 Central 2N2326 2N2327 2N2328 2N2329 TM Semiconductor Corp. SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2322 Series types are hermetically sealed Silicon Controlled Rectifiers designed for sensing

Contextual Info: 2N2326 Dimensions in mm inches . Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 0.41 (0.016) 0.53 (0.021)

2N1595

Abstract: 2N1595A 2N2324 2n1596 CS18D 2N1596A 2N1597 2N2322 2N2323 2N2325
Contextual Info: SCRS Continued 1.0 It (AMPS) 1.6 @ T c (°C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 TO-39 TO-18 CASE VRRM (VOLTS) 2N2322 25 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 2N2325 150 200 C S18B C S18BZ 2N1597A 2N1597 2N2326 2N2327 250 300 400 CS18D

2328a

Abstract: c 2328a
Contextual Info: Silicon Controlled Rectifiers P art N um ber J AN TXV2N 2324S 2N2325 2N2325A ID202 2N2326 2N2326A AD102 AD109 AD116 ID203 JA N 2N2326 JA N 2N 2326A JAN 2N2326A S JA N 2N2326S JA N TX2N 2326 JAN TX2N 2326A JAN TX2N 2326A S JAN TX2N 2326S JA N TXV2N 2326 JA N TXV2N 2326A

Contextual Info: 2N2326 Dimensions in mm inches . Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 0.41 (0.016) 0.53 (0.021)

2N2328A

Abstract: 2N2324 2n2329 2N2329s JANtx 2N2324 JANTXV 2N2323 JANTX 2N2326 JANTX 2N2324A
Contextual Info: TECHNICAL DATA SILICON CONTROLLED RECTIFIER Qualified per MIL-PRF-19500/276 Devices Qualified Level 2N2323 2N2323S 2N2323A 2N2323AS 2N2324 2N2324S 2N2324A 2N2324AS 2N2326 2N2326S 2N2326A 2N2326AS 2N2328 2N2328S 2N2328A 2N2328AS JAN JANTX JANTXV 2N2329 2N2329S

2N1595

Abstract: 2N2324 2N1599A 2N1595A 2N1596 2n2328 2N1599 2N2329 2N2323 2N2327
Contextual Info: SCRs Continued IT (AMPS) 1.0 o 1.6 @ TC ( C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 CASE TO-18 TO-39 VRRM (VOLTS) 25 2N2322 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 150 200 2N2325 CS18B CS18BZ 2N1597 2N1597A 250 2N2326 2N2327 300 2N1598 2N1598A

scr tag 2 200

Abstract: scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138
Contextual Info: iTïïffi SCR IN METAL PACKAGE TO-39 •7 ? 1, 6 A RMS A r>M C IM M O h T A n DUC IM 'W 15V 2N2322 2N2322A BTX30- 50 2N2323 2N2323A BTX30-100 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 25V 50V 60V 100V 150V vDRM 200V V 250V RRM BLOCKING VOLTAGE

JANTX 2N2326A

Abstract: ST201 ST-200A JANTX 2N2324A 2N2324A JANTX
Contextual Info: in THYRISTORS a o PACKAGE DEVICE TYPE TO-39 2N 2323" 2N2323A“ 2N2324’ * 2N2324A* 2N2325A‘ * 2N2326Ä“ DC ON STATE CURRENT AMPS • gt MAX mA VDRM VOLTS 1.6 1.6 1.6 1.6 1.6 1.6 30 50 100 100 150 200 Vg t MAX VOLTS 200 20 200 20 20 20 0.8 0.6 0.8 0.6

Contextual Info: SCRS Continued 1.0 It (AMPS) 1.6 @ T c (°C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 TO-18 CASE TO-39 VRRM (VOLTS) 2N2322 25 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 2N2325 150 200 CS18B CS18B Z 2N1597A 2N1597 2N2326 2N2327 250 300 400 CS18D

Contextual Info: m 2N2326 \ \ SILICON CONTROLLED RECTIFIER SCR DESCRIPTION: The 2N2326 is Designed for Medium Current General Purpose Power Control Applications. MAXIMUM RATINGS 1-6 A (RMS) @ Tc - 85 °C 't 1.0 A @ Tc = 85 °C 200 V ce P gm = 1 00 m W P g (avg) = 10 m W

BTX30-500

Abstract: btx30-100 BTX30-200 TAG606 TAG606-200 BTX30 TAG611-800 TAG606-600 BTX30-400 2N2324A
Contextual Info: iTïïffi SCR IN METAL PACKAGE TO-39 •7 ? 1, 6 A RMS A r>MC IM M O h T A n D U C IM'W 15V 2N2322 2N2322A BTX30- 50 2N2323 2N2323A BTX30-100 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 25V 50V 60V 100V 150V vDRM 200V V 250V RRM BLOCKING VOLTAGE

VOLTAGE-60

Contextual Info: COMSET SEMICONDUCTORS 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP)

2N2325

Abstract: 2N2324 2N2326 2N2322 2N2323
Contextual Info: 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP) IT(RMS) ITSM Ratings Peak reverse blocking voltage (1)

New England Semiconductor 2n2326a

Abstract: 2N2324A 2N2325 2N2322 2N2323 2N2323A 2N2324 2N2325A 2N2326 2N2326A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SILICON CONTROLLED RECTIFIERS TO-39/TO-5 PACKAGE DEVICE TYPE V drm VOLTS IT AMPS 80°C ¡D RM jiA Vgt VOLTS I gt HA mA Ih P gm WATTS TO-39 2N2322 25 1.6 10 0.35/0.8 200 2.0 0.1 fjl 2N2323 50 1.6 10 0.35/0.8 200 2.0 0.1 2N2323A 50

Contextual Info: DIGITRON SEMICONDUCTORS 2N2322 A -2N2328(A), 2N2329 SILICON CONTROLLED RECTIFIERS 1.6 AMP, PLANAR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

GE C106B1

Abstract: SCR C106Y1 ge c106d1 GE C106A1 ge C106Y1 SCR C103 GE C6U GE C6F 2N1931 c106B1 scr
Contextual Info: 232 232 232 232 o O PHASE CONTROL SCR’s LOW CURRENT .5 TO 4.0 AMPERES GE TYPE JE D EC C3 C103 C8 C6 C7 05 — C106 C107 2N877-81 — 2N1929-35 — 2N2344-48 2N2322-29 * 2NI1595-99 — — 30-200 30-200 25-300 25-200 2G-200 25-400 «M O » 15-400 15-400 o.so

GT 32 DIAC

Abstract: TAG 203 350 2n50b tag 627 800 tag thyristoren 2N3936 2N3937 2N1601 tag 6 600 TO-48C
Contextual Info: Thyristoren Silicon Controlled Rectifiers TYP* *8=V .V DRM RRM BRX 44.BRX 49 BRX 50.BRX 56 TAG 50.TAG 57 BR 103 TAG 60P TAG 60A TAG 06-* BR 203 TAG 64F TAG 64A TAG 1-* TAG 2-* BTX 30-* TAG 520-* TAG 521~* TAG 605-* TAG 606-* TAG 106 BRX.61.BRX66 TAG 610-*

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL