CS18D Search Results

to18 case

Abstract: Marking A2s CS18B CS18D CS18M CS18N
Contextual Info: CS18B CS18D CS18M CS18N w w w. c e n t r a l s e m i . c o m SILICON CONTROLLED RECTIFIER 1 AMP, 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS18B series types are hermetically sealed silicon controlled rectifiers manufactured in a TO-18 case, designed for

2N1595

Abstract: 2N1595A 2N2324 2n1596 CS18D 2N1596A 2N1597 2N2322 2N2323 2N2325
Contextual Info: SCRS Continued 1.0 It (AMPS) 1.6 @ T c (°C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 TO-39 TO-18 CASE VRRM (VOLTS) 2N2322 25 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 2N2325 150 200 C S18B C S18BZ 2N1597A 2N1597 2N2326 2N2327 250 300 400 CS18D

Contextual Info: CS18BZ CS18DZ CS18MZ CS18NZ w w w. c e n t r a l s e m i . c o m SILICON CONTROLLED RECTIFIERS 1.0 AMP, 200 THRU 800 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR CS18BZ series types are hermetically sealed silicon controlled rectifiers manufactured in a TO-18 case, designed for

Contextual Info: SCRS Continued 1.0 It (AMPS) 1.6 @ T c (°C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 TO-18 CASE TO-39 VRRM (VOLTS) 2N2322 25 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 2N2325 150 200 CS18B CS18B Z 2N1597A 2N1597 2N2326 2N2327 250 300 400 CS18D

CS18B

Abstract: CS18D CS18M CS18N to18 case
Contextual Info: Central CS18B CS18D CS18M CS18N TM Semiconductor Corp. SILICON CONTROLLED RECTIFIER 1.0 AMP, 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS18B series types are hermetically sealed silicon controlled rectifiers manufactured in a TO-18 case, designed

Contextual Info: Centrar CS18B CS18D CS18M CS18N Semiconductor Corp. SILICON CONTROLLED RECTIFIER 1.0 AMP, 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS18B series types are hermetically sealed silicon controlled rec­ tifiers manufactured in a TO-18 case, designed for

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2n1596

Abstract: 2N1595 2N2325 2N1599 2N2322 2N2323 2N2324 CS18B CS18BZ 2N1595A
Contextual Info: SCRs Continued IT (AMPS) 1.0 o 1.6 @ TC ( C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 CASE TO-18 TO-39 VRRM (VOLTS) 25 2N2322 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 150 200 2N2325 CS18B CS18BZ 2N1597 2N1597A 250 2N2326 2N2327 300 2N1598 2N1598A

BT131 equivalent

Abstract: BRX49 equivalent S6015L equivalent BTA16-600B equivalent BT134 equivalent BTA12-600B equivalent X0405MF equivalent equivalent mcr22 2N5064 equivalent BT131 600 equivalent
Contextual Info: index/cross Reference Industry Part Number Central Part Number Code 2N5060 2N5061 2N5062 2N5063 2N5064 2N6071 2N6071A 2N6071B 2N6072 2N6072A 2N6072B 2N6073 2N6073A 2N6073B 2N6074 2N6074A 2N6074B 2N6075 2N6075A 2N6075B 2N6342 2N6342A 2N6343 2N6343A 2N6344 2N6344A

BRX49 SCR

Abstract: BRX49 equivalent BRX49 SCR BRX49 BRX49 datasheet Thyristors BRX49 transistor brx49 CPS041 CS18D CS89M
Contextual Info: PROCESS CPS041 Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 41 x 41 MILS Die Thickness 8.7 MILS ± 0.6 MILS Cathode Bonding Pad Area 18 x 8 MILS Gate Bonding Pad Area 7.1 x 7.1 MILS Top Side Metalization

BRX49 equivalent

Abstract: BRX49 BRX49 pinout 2n1771 data sheet 2N4172 2N1778 circuit G C106B1 2N3670 2n3668 C103B
Contextual Info: SCRs Silicon Controlled Rectifiers Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts IT (AMPS) o 0.8 @ TC ( C) 55 55 55 55 60 ITSM (AMPS) 6.0 6.0 6.0 6.0 10 TO-92 CASE TO-18 TO-92 Pinout Pinout CGA AGC VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885

Contextual Info: Continued 1.0 It (AMPS) 1.6 TC (°C ) 90 90 70 70 70 iTSM (AMPS) 10 10 15 15 15 CASE T O -39 T O -1 8 VRRM (VOLTS) 25 2 N 2322 50 2 N 1595 2 N 1 5 95 A 2 N 2 3 23 100 2 N 1596 2N 1596A 2 N 2 3 24 150 200 2 N 2 3 25 C S 18B CS18BZ 2N 1597 2N 1 5 97 A 250

C106D to-126

Abstract: BRX49 equivalent BRX49 CMPS5061 equivalent mcr22 2N5064 equivalent EQUIVALENT 2N5064 BRX47 BRX49 BRX49 datasheet CMPS5062
Contextual Info: SCRs IT AMPS 0.2 @ TC (oC) 25 60 60 60 60 25 90 ITSM (AMPS) 7.5 10 10 10 10 10 10 SOT-89 TO-92 SOT-223 TO-18 CASE VRRM (VOLTS) 0.8 SOT-23 TO-92 30 2N5060 BRX44† 60 2N5061 BRX45† 2N5062 BRX46† 100 CMPS5061 150 1.0 2N5063 BRX47† 200 CMPS5062 300 CMPS5063

BTA08-600C equivalent

Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
Contextual Info: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

Contextual Info: PROCESS CPS041 Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 41 x 41 MILS Die Thickness 8.7 MILS ± 0.6 MILS Cathode Bonding Pad Area 18 x 8 MILS Gate Bonding Pad Area 7.1 x 7.1 MILS Top Side Metalization

SCR 2N1599

Abstract: SCR 2N1595 BRX49 SCR c106B1 scr scr c103b CS83-110N 2N4174 scr 2N3669 2N4172
Contextual Info: SCRS Silicon Controlled Rectifiers Metal/Plastic Packages 0.8 to 110 Am peres RMS 15 to 1200 Volts 0.8 IT (AMPS) @ TC (°C) •TSM (AMPS) 55 55 55 55 60 60 6.0 6.0 6.0 6.0 10 10 I TO-18 CASE I TO-92 TO-92-18R VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001