2N2322 Search Results

New England Semiconductor 2n2326a

Abstract: 2N2324A 2N2325 2N2322 2N2323 2N2323A 2N2324 2N2325A 2N2326 2N2326A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SILICON CONTROLLED RECTIFIERS TO-39/TO-5 PACKAGE DEVICE TYPE V drm VOLTS IT AMPS 80°C ¡D RM jiA Vgt VOLTS I gt HA mA Ih P gm WATTS TO-39 2N2322 25 1.6 10 0.35/0.8 200 2.0 0.1 fjl 2N2323 50 1.6 10 0.35/0.8 200 2.0 0.1 2N2323A 50

Contextual Info: DIGITRON SEMICONDUCTORS 2N2322 A -2N2328(A), 2N2329 SILICON CONTROLLED RECTIFIERS 1.6 AMP, PLANAR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

GE C106B1

Abstract: SCR C106Y1 ge c106d1 GE C106A1 ge C106Y1 SCR C103 GE C6U GE C6F 2N1931 c106B1 scr
Contextual Info: 232 232 232 232 o O PHASE CONTROL SCR’s LOW CURRENT .5 TO 4.0 AMPERES GE TYPE JE D EC C3 C103 C8 C6 C7 05 — C106 C107 2N877-81 — 2N1929-35 — 2N2344-48 2N2322-29 * 2NI1595-99 — — 30-200 30-200 25-300 25-200 2G-200 25-400 «M O » 15-400 15-400 o.so

SCR GE C5u

Abstract: SCR C103 specification of IC 2N1597 scr c108 7N870 GE scr C5u scr C203 2N2346 SCR C106Y1 2N2322-29
Contextual Info: C3 GE TYPE 2N 877-81"1 JEDEC C1 03 C203 - 2N5060-64 C5 30-200 30 400 2N2322-29 C6 07 - 2N 2344-48 25-400 25-200 - C106 C107 C108 - - - 50 400 15-600 1 *« K . 15-600 2N1595-99,A ELECTRICAL SPECIFICATIONS 30-200 VOLTAGE RANGE ? 5 400 FORWARD CONDUCTION •t r m s :i Max. RM S on-state current (A

SCR C106Y1

Abstract: ge c106b1 1N177 2N1777A 2N2344 2N1932 G C106B1 2N1931 Z4XL18 2N2346
Contextual Info: 232 232 232 O 232 o P H A S E C O N T R O L SCR’ s LOW C U R R E N T .5 TO 4.0 A M P ER ES GE TYPE JE D EC C3 C103 C8 C6 C7 05 — C106 C107 2N877-81 — 2N1929-35 — 2N2344-48 2N2322-29 * 2NI1595-99 — — 30-200 30-200 25-300 25-200 2G-200 25-400 «M O »

2N3555

Abstract: 2N4110 2n2344 2N1595 2n2009 2N6332 2N3005 2N4212 2N3003 2n6335
Contextual Info: SOLID SILICON CONTROLLED RECTIFIERS ON STATE CURRENT piv CASE — =£!!L 275mA 280mA 350mA 390mA 500mA 1.0A 1.3A TO-18 TO-18 TO-18 TO-18 TO-5 TO-18 TO-5 TO-5 TO-5 2N4212 2N2009 2N2322 2N2322A 2N2344 2N3027 2N3030 2N3555 2N4213 2N2010 2N1595 2N1595A 2N2028

2n1596

Abstract: 2N1595 2N2325 2N1599 2N2322 2N2323 2N2324 CS18B CS18BZ 2N1595A
Contextual Info: SCRs Continued IT (AMPS) 1.0 o 1.6 @ TC ( C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 CASE TO-18 TO-39 VRRM (VOLTS) 25 2N2322 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 150 200 2N2325 CS18B CS18BZ 2N1597 2N1597A 250 2N2326 2N2327 300 2N1598 2N1598A

2N2324

Abstract: 2N2322 2N2329 2N2323 semiconductor 2N2323 2N2325 "Silicon Controlled Rectifier" 2 amps 2N2326 semiconductor case marking 16 2N2328
Contextual Info: 2N2322 2N2323 2N2324 2N2325 Central 2N2326 2N2327 2N2328 2N2329 TM Semiconductor Corp. SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2322 Series types are hermetically sealed Silicon Controlled Rectifiers designed for sensing

JAN2N2324

Abstract: Unitrode 2n2323 JANTX 2N2324 2N2325 432t JANTX 2N2326 2N2323 2N2324 JANTX2N2326A JANTX2N2323
Contextual Info: SCRs 2N2322-2N2329 2N2323A-2N2328A 1.6 Amp, Planar FEATURES DESCR IPTIO N • A vailable as JA N , JA N T X V & JA N T X V Types • 1.6A D.C. C u rre n t • Peak Currents: to 30A • V oltage R atings: to 400V • 20/iA Max. T rigger C u rre n t "A " types

Contextual Info: Silicon Controlled Rectifiers Page 1 of 1 Home Package Device Type VDRM Volts IT Amps 80° C IDRM mA VGT Volts IGT mA IH Ma PGM Watts TO-39 2N2322 25 1.6 10 0.35/0.8 200 2.0 0.1 TO-39 2N2323 50 1.6 10 0.35/0.8 200 2.0 0.1 TO-39 2N2323A 50 1.6 10 0.35/0.6 20

2N1595

Abstract: 2N1595A 2N2324 2n1596 CS18D 2N1596A 2N1597 2N2322 2N2323 2N2325
Contextual Info: SCRS Continued 1.0 It (AMPS) 1.6 @ T c (°C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 TO-39 TO-18 CASE VRRM (VOLTS) 2N2322 25 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 2N2325 150 200 C S18B C S18BZ 2N1597A 2N1597 2N2326 2N2327 250 300 400 CS18D

TD6001S

Abstract: ET 191 la 78140 marking ALP 2N2322 thomson ms 250
Contextual Info: S G S-THOMSON 7ÖC D DD07tiB7 2N2322— ►2N2329 TD 5001 S - TD 6001 S SENSITIVE GATE THYRISTORS THYRISTORS SENSIBLES 7ÖC Û 7 Ô 3 7 lïiR M S l — 1.6 A / T c = 85°C • Operates directly from low signal sensitive gate . • • • V D R M = V r r m up to 600 V.

2N2327A

Contextual Info: NEW ENGLAND SEMICONDUCTOR SILICON CONTROLLED RECTIFIERS TO-39/TO-5 PACKAGE TO-39 jit^ nr fj! TO-5 UT li ! V drm VOLTS IT AMPS 80°C I drm HA VOLTS V gt Igt |iA mA WATTS 2N2322 25 1.6 10 0.35/0.8 200 2.0 0.1 2N2323 50 1.6 10 0.35/0.8 200 2.0 0.1 2N2323A 50

scr C203

Abstract: 2N2344 application 2N2323 C108D1 2N2346 7N870 SCR 2N5061 SCR C103 specifications 2N1597 C103
Contextual Info: C3 GE TYPE 2N877-81"1 JEDEC C103 C203 - 2N5060-64 C5 30-200 30 400 2N2322-29 C6 07 - 2N 2344-48 25-400 25-200 - C106 C107 C108 - - - 50 400 15-600 1 *«K . 15-600 2N1595-99,A ELECTRICAL SPECIFICATIONS 30-200 VOLTAGE RANGE ?5 400 FORWARD CONDUCTION •t r m

scr tag 2 200

Abstract: scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138
Contextual Info: iTïïffi SCR IN METAL PACKAGE TO-39 •7 ? 1, 6 A RMS A r>M C IM M O h T A n DUC IM 'W 15V 2N2322 2N2322A BTX30- 50 2N2323 2N2323A BTX30-100 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 25V 50V 60V 100V 150V vDRM 200V V 250V RRM BLOCKING VOLTAGE

Contextual Info: SCRS Continued 1.0 It (AMPS) 1.6 @ T c (°C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 TO-18 CASE TO-39 VRRM (VOLTS) 2N2322 25 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 2N2325 150 200 CS18B CS18B Z 2N1597A 2N1597 2N2326 2N2327 250 300 400 CS18D

2N2322A

Abstract: 2N2322-29 rgk 20/2 2N2322 2N2325 2N2323 2N2323A C511
Contextual Info: SCR C5 Series 2N2322-29 2N2322A-28A 1.6A RMS Up to 400 Volts C511 Diamond Base * _ T he C5 S eries of Silicon C ontrolled R ectifiers a re rev erse blocking th y ris to rs fo r use in low pow er sw itch in g and control ap p licatio ns. T hey fe a tu re tw o ra n g e s of g a te se n si­

BTX30-500

Abstract: btx30-100 BTX30-200 TAG606 TAG606-200 BTX30 TAG611-800 TAG606-600 BTX30-400 2N2324A
Contextual Info: iTïïffi SCR IN METAL PACKAGE TO-39 •7 ? 1, 6 A RMS A r>MC IM M O h T A n D U C IM'W 15V 2N2322 2N2322A BTX30- 50 2N2323 2N2323A BTX30-100 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 25V 50V 60V 100V 150V vDRM 200V V 250V RRM BLOCKING VOLTAGE

VOLTAGE-60

Contextual Info: COMSET SEMICONDUCTORS 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP)

2N2325

Abstract: 2N2324 2N2326 2N2322 2N2323
Contextual Info: 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP) IT(RMS) ITSM Ratings Peak reverse blocking voltage (1)

GT 32 DIAC

Abstract: TAG 203 350 2n50b tag 627 800 tag thyristoren 2N3936 2N3937 2N1601 tag 6 600 TO-48C
Contextual Info: Thyristoren Silicon Controlled Rectifiers TYP* *8=V .V DRM RRM BRX 44.BRX 49 BRX 50.BRX 56 TAG 50.TAG 57 BR 103 TAG 60P TAG 60A TAG 06-* BR 203 TAG 64F TAG 64A TAG 1-* TAG 2-* BTX 30-* TAG 520-* TAG 521~* TAG 605-* TAG 606-* TAG 106 BRX.61.BRX66 TAG 610-*

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Contextual Info: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2H5061

Abstract: 2N268 2N2601 2N893
Contextual Info: discrete devices lir^ ] JEmitronicr hot line T O L L F R E E N U M B E R 800-777-3960 thyristors and triggers silico n controlled rectifiers Type 'Note 1 Forward Current It (Amps) Max. Forward Max. Reverse Voltasti V fom / V rom (volts) (Noto 2) Maximum