2N680 Search Results
2N680 Datasheets (92)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2N680 | Motorola | Motorola Semiconductor Datasheet Library | Scan | 79.98KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N680 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 110.87KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N680 | Unknown | Shortform Transistor Datasheet Guide | Short Form | 93.04KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N680 | Unknown | Transistor Shortform Datasheet & Cross References | Scan | 83.31KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N680 | Unknown | Vintage Transistor Datasheets | Scan | 53.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N680 | Unknown | GE Transistor Specifications | Scan | 37.18KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N680 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 92.2KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N680 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 145.41KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N680 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.24KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6800 | Defense Supply Center Columbus | N-Channel FET | Original | 169.27KB | 23 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6800 | International Rectifier | TRANS MOSFET N-CH 400V 3A 3TO-205 | Original | 65.29KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6800 | International Rectifier | HEXFET TRANSISTORS | Original | 131.98KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6800 | Microsemi | N Channel MOSFET; | Original | 176KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6800 | Microsemi | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V TO-205AF TO-39 | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6800 | Semelab | FET, 2 VThreshold, ID 3 A | Original | 24.12KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6800 | Semelab | N-CHANNEL ENHANCEMENT POWER MOSFET | Original | 48.67KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6800 | Harris Semiconductor | Power MOSFET Data Book 1990 | Scan | 230.17KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6800 | International Rectifier | TO-39 Package N-Channel HEXFET | Scan | 102.24KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6800 | International Rectifier | TO-39 N-Channel HEXFET Power MOSFETs | Scan | 44.22KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6800 | Motorola | European Master Selection Guide 1986 | Scan | 59.59KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N680 Price and Stock
Vishay Intertechnologies RMK22N680RB- Waffle Pack (Alt: RMK22N680RB) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RMK22N680RB | Waffle Pack | 15 Weeks | 100 |
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Buy Now | |||||
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RMK22N680RB | Bulk | 100 |
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Buy Now | ||||||
ECS International Inc ECXV-H37C2N-68.00068.000 MHZ +3.3V SMD HCMOS VCXO 7050 PKG 25 PPM -40 ~ +85C 90 PPM PULL RANGE - Bulk (Alt: ECXV-H37C2N-68.000) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ECXV-H37C2N-68.000 | Bulk | 17 Weeks | 10 |
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International Rectifier 2N6802Trans MOSFET N-CH 500V 2.5A 3-Pin TO-39 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N6802 | 2 | 22 Weeks | 2 |
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Buy Now | |||||
SPC Multicomp MC0402N680J500CTMultilayer Ceramic Capacitor, Mc Series,; |Multicomp Pro MC0402N680J500CT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MC0402N680J500CT | Tape & Reel | 21,096 | 500 |
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Buy Now | |||||
| MC0402N680J500CT | Cut Tape | 21,096 | 10 |
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| MC0402N680J500CT | Tape & Reel | 10,000 | 10,000 |
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Buy Now | ||||||
| MC0402N680J500CT | Tape & Reel | 10,000 |
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| MC0402N680J500CT | Cut Tape | 10,000 |
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Vishay Intertechnologies NTHS0805N02N6801JENtc Thermistor, 6.8K, 0805; Thermistor Type:Chip; Resistance (25°C):6.8Kohm; Product Range:Nths Series; B-Constant:3477K; B-Constant Tolerance:± 3%; Probe Material:-; Lead Length:-; Operating Temperature Min:-40°C; Qualification:- Rohs Compliant: Yes |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTHS0805N02N6801JE | Tape & Reel | 2,000 |
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| NTHS0805N02N6801JE | Cut Tape | 2,000 |
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NTHS0805N02N6801JE | 143 Weeks | 2,000 |
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Get Quote | ||||||
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NTHS0805N02N6801JE | 10 Weeks | 2,000 |
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2N680 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2N6804Contextual Info: Rugged Power MOSFETs 2N6804 File N um ber 2217 Avalanche-Energy-Rated P-Channel Power MOSFETs TE R M IN A L DIAGRAM -11 A, -100V r Dsiom = 0.30D Features: • S ingle pulse avalanche e n ergy rated ■ SOA is p o w e r-d is s ip a tio n lim ite d ■ N anosecond s w itc h in g speeds |
OCR Scan |
2n6804-100v92cs-433092cs-43278 | |
2N6801LCC6Contextual Info: Search Results Part number search for devices beginning "2N6801" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) 2N6801 N-Channel TO39 450V 2.5A 25W |
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2n68012n6801lcc42n6801lcc4-jqr-b2n6801lcc6+4 | |
1RF9130
Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
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OCR Scan |
jantx2n6782jantx2n6784jantx2n6786jantx2n6788+16 | |
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Contextual Info: 2N6804+JANTX Transistors P-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)11# I(DM) Max. (A) Pulsed I(D)7.0# @Temp (øC)100 IDM Max (@25øC Amb)50# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75# Minimum Operating Temp (øC) |
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2n6804 | |
JANTX2N6796
Abstract: 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6798 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798
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2n6796jantx2n6796jantxv2n67962n6798+8 | |
2N6799Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel 2N6799 JTX, JTXV 2N6800 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosnm and a high transconductance. FEATURES |
OCR Scan |
2n67992n6800 | |
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Contextual Info: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These |
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2n6796u2n6798u2n6800u2n6802u+3 | |
2N6802
Abstract: IRFF430
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Original |
2n6802irff430o-205af | |
2N6880
Abstract: 2N6798 JANTXV
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Original |
2n67962n67982n68002n6802+4 | |
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Contextual Info: 2N6800 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET. |
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2n6800o205af11-oct-02 | |
p12p10
Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
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OCR Scan |
2n68042n68492n68512n6895+15 | |
2N6800Contextual Info: SEME 2N6800 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . BVDSS ID RDS(on) 0 .8 9 m a x . (0 .0 3 5 ) |
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2n680000a/ms300ms | |
MOSFET
Abstract: 2N6802
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Original |
2n6802irff43000a/us300us+1 | |
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Contextual Info: 2N6802 IRFF430 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) |
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2n6802irff430o-205af | |
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Contextual Info: 2N6800 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 400V 3.0A Ω |
Original |
2n6800o205af2n6800lcc42n6800lcc4-jqr-b+3 | |
mil-prf-19500/557
Abstract: 2N6800 2N6800U
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Original |
mil-prf-19500/5572n68002n6800uopera0803+1 | |
2N6802
Abstract: 2N6802U
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Original |
mil-prf-19500/5572n68022n6802ut4-lds-0149 | |
2N6802Contextual Info: MOTOROLA SC XSTRS/R F 12E 0 | b3b?25M GQöbbbö 0 | 2N6802 CASE 79-05, STYLE 6 TO-39 TO-205AF MAXIMUM RATINGS Symbol Value U nit Drain-Source Voltage Rating Voss 500 Vdc Drain-Gate Voltage (Rq s * 1 . 0 m il) Vd g r 500 Vdc Vg S Drain Current Continuous |
OCR Scan |
2n6802o-205af | |
DD 127 D TRANSISTOR
Abstract: transistor DD 127 D 2N6880 2N6798 2N6796 2n6796 jantx 2N6796 JANTXV 2N6802 2n6800 2N6798 JANTXV
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Original |
2n67962n67982n68002n6802+9 | |
DD 127 D transistor
Abstract: 2n6798u 2N6796U
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Original |
2n6796u2n6798u2n6800u2n6802u+6 | |
asz21
Abstract: AF117 AF114 OC170 Low-Power Germanium PNP GT346B 2G381 2SA239 2n2398 s100
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Original |
2n11582n6152n29662n1158a+14 | |
2N6801-SM
Abstract: BFC49
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OCR Scan |
2n6800sm2n68012n6801-sm2n6801lcc4+7 | |
2N6800Contextual Info: 2N6800 {£ HARRIS N -Channel Enhancem ent-M ode Power MOS Field-Effect Transistor A ug ust 1 9 9 1 P a ckage Features T O -2 0 5 A F • 3 A, 4 0 0 V * rD S o n ) BOTTOM VIEW = m C. • S O A is P o w e r - D is s ip a t io n L im ite d • N an o se co n d |
OCR Scan |
2n6800 | |
2N6804Contextual Info: 2 } H A R R 2N6804 IS Avalanche-Energy-Rated P-Channel Power MOSFETs A ugust 1 9 9 1 Package Features TQ-204AA BOTTOM VIEW • -1 1 A, -1 0 0 V * rD S on = 0 .3 0 f i DRAIN (FLANGE) SOURCE • Single Pulse A valanche E nergy Rated • S O A is P ow er-D issip atio n Lim ited |
OCR Scan |
2n6804tq-204aasscs-4330492cs-43307 | |