2N7225 Search Results

TO-276

Abstract: IRF250SMD IRFN250 TO276AB
Contextual Info: IRFN250 2N7225U1 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

2n7225

Contextual Info: 2N7225JANTX/JANTXV Siliconix NĆChannel EnhancementĆMode Transistors Product Summary VDS V rDS(on) (W) ID (A) 200 0.105 27.4 Parametric limits in accordance with MILĆSĆ19500/592 where applicable. TOĆ254AA Hermetic Package D G Case Isolated S D S G NĆChannel MOSFET

Contextual Info: 2N7225+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)27.4 I(DM) Max. (A) Pulsed I(D)17 @Temp (øC)100# IDM Max (@25øC Amb)110 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55

MIL-PRF-19500/592

Abstract: 2N7225 2N7225U
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7225 2N7225U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

JANTXV2N7224

Abstract: 2N7224 JANTXV 2N7228 JANTX mosfet data sheet JANTX2N7224 JANTX2N7225 2N7228 JANTX mosfet JANTX2N7228 2N7224 2N7225 2N7227
Contextual Info: 2N7224, JANTX2N7224, JANTXV2N7224 2N7225, 2N7225, 2N7225 2N7227, JANTX2N7227, JANTXV2N7227 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/592 100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated

Contextual Info: IRFN250SMD 2N7225U1 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 2 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 200V 27.4A Ω 0.100Ω FEATURES 1 6 .0 2 (0 .6 3 1 )

Contextual Info: N-CHANNEL POWER MOSFET 2N7225 / IRFM250 • VDSS = 200V, ID CONT = 27.4A, RDS(ON) = 100mΩ • Hermetic Isolated Metal TO-254AA Package • Integral Body Diode • High-Reliability Screening Options Available • Tabless and Z Tab options available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

2n7225jantx

Contextual Info: 2N7225JANTX/JANTXV N-Channel Enhancement-Mode Transistors Product Summary VDS V rDS(on) (W) ID (A) 200 0.105 27.4 Parametric limits in accordance with MIL-S-19500/592 where applicable. TO-254AA Hermetic Package D G Case Isolated S D S G N-Channel MOSFET

2N7225

Abstract: JS500 2N7224 2N7227 2N7228 OMNIREL N7224
Contextual Info: 2N7224 2N7227 2N7225 2N7228 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V T h ru 500V, N -C h a n n e l E n h a n c e m e n t M o d e , M O S F E T P o w e r T r a n s is to r FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low RDS on

2N7225

Contextual Info: Tem ic 2N7225JANTX/JANTXV Siliconix N-Channel Enhancement-Mode Transistors Product Summary VD S V r DS(on) ( ß ) I d (A) 200 0.105 27.4 Parametric limits in accordance with MIL-S-19500/592 where applicable. TO-254AA H erm etic P ackage o C a s e I s o la te d

Contextual Info: IRFN250 2N7225U1 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

2N6801-SM

Abstract: BFC49
Contextual Info: SEMELAB pic Type_No 2N6800SM 2N6801 2N6801-SM 2N6801LCC4 2N6802 2N6802SM 2N6845 2N6847 2N6849 2N6849L 2N6851 2N7000 2N7218 2N7219 2N7221 2N72220 2N7224 2N7225 2N7227 2N7227 2N7228 2N7228 2N7236 2N7237 BC264 BFC10 BFC11 BFC12 BFC13 BFC14 BFC15 BFC16 BFC17 BFC18

Contextual Info: 2N7224 2N7227 2N7225 2N7228 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, N-Channel Enhancement Mode, MOSFET Power Transistor FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Ceramic Feedthroughs Available

2N7225

Abstract: IRFM250
Contextual Info: IRFM250 2N7225 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) VDSS ID(cont) RDS(on) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)

2N7225 JANTX

Abstract: 2N7228 JANTX mosfet 2N7225 2N7224 JANTXV 2N7228
Contextual Info: 2N7224, 2N7225, 2N7227 and 2N7228 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/592 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. These devices are also available in a low profile U surface mount

Contextual Info: N-CHANNEL POWER MOSFET 2N7225 / IRFM250 • VDSS = 200V, ID CONT = 27.4A, RDS(ON) = 100m1 • Hermetic Isolated Metal TO-254AA Package • Integral Body Diode • High-Reliability Screening Options Available • Tabless and Z Tab options available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

2N7225

Contextual Info: SENSITRON SEMICONDUCTOR 2N7225 TECHNICAL DATA DATA SHEET 271, REV. A HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 200 VOLT, 0.105 OHM, 27.4 A MOSFET IN A HERMETIC TO-254 PACKAGE. add suffix S for up-screening to JTX Level – 2N7225S MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED.

Contextual Info: 2N7224 2N7227 2N7225 2N7228 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V. N-C hannel E n h a n c e m e n t Mode. MOSFET Power T r a n s is t o r FEATURES • • • • Isolated Hermetic Metal Package Fast Switching LowRDS on Ceramic Feedthroughs Available

2N6801LCC6

Contextual Info: Search Results Part number search for devices beginning "2N6801" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) 2N6801 N-Channel TO39 450V 2.5A 25W

Contextual Info: IINCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. MIL-PRF-19500/592G 17 April 2013 SUPERSEDING MIL-PRF-19500/592F 2 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

SHD239608

Abstract: shd239606
Contextual Info: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM

C3781

Abstract: 2N7225 IRFM250 2N7225 JANTX transistor 1317 i324
Contextual Info: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR t N-CHANNEL IRFMS50 SN7SS5 JANTX2N7S25 2N7225 REF: MIL-S-19500/5 9 5 ] Product Summary 200 Volt, 0.100 Ohm HEXFET The HEXFET® technology is the key to International

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET