254AA Search Results

2N7218

Abstract: 2N7219 2N7221 2N7222 JANTX2N7218 JANTX2N7219 JANTX2N7221 JANTX2N7222 JANTXV2N7218 JANTXV2N7219
Contextual Info: 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated

2N7073

Contextual Info: C rS iica n ix J iÆ 2N7073 in c o r p o r a te d N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW PRODUCT SUMMARY V BR DSS r DS(ON) >D (V) <fi) (A) 400 0.55 9.0 2 SOURCE 3 GATE Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

2N7076

Contextual Info: Tem ic 2N7076 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d (A) 200 0.10 28 TO-254AA H erm etic P ackage O Case Isolated DSC, Top View N-Channel MOSFE'I' Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

2N7076

Contextual Info: 2N7076 e r S iic o n ix in c o rp o ra te d N-Channel Enhancement Mode Transistor TO -254AA Herm etic Package TO P VIEW o PRODUCT SUMMARY 200 h k.Û V BR|DSS (A 0.10 28 1 DRAIN 2 SOURCE 3 G AT E 1 2 3 C a s e Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

2N7227

Abstract: SV400
Contextual Info: Tem ic 2N7227JANTX/JANTXV Siliconix N-Channel Enhancement-Mode Transistors Product Summary V D S V r DS(on) (Q ) I d (A) 400 0.415 14 Parametric limits in accordance with M 1I.-S-19500I592 where applicable. TO-254AA H erm etic Package o G 0 - It Case Isolated

2N7074

Contextual Info: 33E D SILICONIX INC fCT'S i ficonix • 62SM73S QOlbDEb 5 « S I X 2N7074 incorporated N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SUMMARY V BR|DSS "W* Id (A 500 0,85 7.0 1 DRAIN 2 SOURCE 3 GATE 1 2 3 Case Isolated

Contextual Info: OM5257SA/RA/DA OM5259SA/RA/DA OM5258SA/RA/DA OM526QSA/RA/DA HERMETIC JEDEC TO-254AA HIGH EFFICIENCY, CENTER-TAP RECTIFIER 40 Amp, 50 To 200 Volts, 50 ns trr FEATURES Very Low Forward Voltage Very Fast Switching Time Hermetic Metal Package, JEDEC TO-254AA Outline

transistor 206

Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3

IGBT 50 amp 1000 volt

Abstract: 10 amp igbt 1000 volt OM6517SA OM6526SA transistor tc 144
Contextual Info: 0M 6517SA OM6526SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 1000 Volt, 15 And 20 Am p, N-Channel IGBT In A Herm etic Metal Package FEATURES • • • • • • • • Isolated IG BTs In A Herm etic Package High Input Im pedance

TO3 RthJA

Abstract: IRHM53064 IRHM54064 IRHM57064 IRHM58064
Contextual Info: PD - 93792C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57064 60V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) RDS(on) 0.012Ω 0.012Ω ID 35A* 35A* IRHM54064 600K Rads (Si)

spice models

Abstract: IRFM340 JANTX2N7221 JANTXV2N7221
Contextual Info: PD - 90490D POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM340 JANTX2N7221 JANTXV2N7221 REF:MIL-PRF-19500/596 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM340 0.55 Ω 10A HEXFET® MOSFET technology is the key to International

OM6505SA

Abstract: OM6506SA
Contextual Info: OM6505SA OM6506SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 500 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • • Isolated Hermetic Metal Package High Input Impedance Low On-Voltage

FRF9250R

Abstract: 1E14 2E12 FRF9250D FRF9250H Rad Hard in Fairchild for MOSFET
Contextual Info: FRF9250D, FRF9250R, FRF9250H 14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 14A, -200V, RDS on = 0.315Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot

JANSR2N7422

Abstract: IRHM9150 IRHM93150 JANSF2N7422
Contextual Info: PD - 90889C IRHM9150 JANSR2N7422 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080Ω ID -22A QPL Part Number

IRF5M3710

Abstract: isd 1740 4.5v to 100v input regulator
Contextual Info: PD - 94234 HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3710 100V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3710 100V RDS(on) 0.03Ω ID 35A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRHM7264SE

Abstract: JANSR2N7434
Contextual Info: PD - 91393E IRHM7264SE JANSR2N7434 250V, N-CHANNEL REF: MIL-PRF-19500/661 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7264SE Radiation Level 100K Rads (Si) RDS(on) 0.11Ω ID 31A QPL Part Number

7170 MOSFET

Abstract: IRHMS593260 IRHMS597260
Contextual Info: PD - 94605 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHMS597260 100K Rads (Si) IRHMS593260 300K Rads (Si) RDS(on) 0.103Ω 0.103Ω ID -32A -32A

OM5224

Abstract: 12a600
Contextual Info: OM5221SA/RA/DA OM5223SA/RA/DA OM5225SA/RA/DA OM5222SA/RA/DA OM5224SA/RA/DA OM5226SA/RA/DA HERMETIC JEDEC TO-254AA HIGH EFFICIENCY, CENTER-TAP RECTIFIER 24 Amp, 50 To 600 Volts, 35 To 50 nsec FEATURES • • • • • • • • Very Low Forward Voltage

mosfet motor dc 48v

Abstract: IRHM53064 IRHM54064 IRHM57064 IRHM58064
Contextual Info: PD - 93792A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57064 60V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) RDS(on) 0.012Ω 0.012Ω ID 35A* 35A* IRHM54064 600K Rads (Si)

T0-254AA

Contextual Info: Case Outline and Dimensions - T0-254AA Standard & Low Ohmic 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 3 17.40 [.685] 16.89 [.665]

OM7805EA

Abstract: OM7812EA OM7815EA
Contextual Info: OM7800EA Series ISOLATED HERMETIC TO-254AA FIXED VOLTAGE REGULATORS WITH INTERNAL CAPACITOR COMPENSATION Three Terminal, Fixed Voltage, 1.5 Amp Internally Compensated, Precision Positive Regulators In Hermetic TO-254AA Package FEATURES • • • • •

Contextual Info: PD-95889A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS57160 JANSR2N7471T1 100V, N-CHANNEL REF: MIL-PRF-19500/698 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHMS57160 100K Rads (Si) 0.013Ω IRHMS53160 300K Rads (Si) 0.013Ω

Contextual Info: PD-94605B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHMS597260 100K Rads (Si) IRHMS593260 300K Rads (Si) RDS(on) 0.103Ω 0.103Ω ID -30A -30A Low-Ohmic

Contextual Info: SCF2N7227T1 JANTX2N7227 JANTXV2N7227 POWER MOSFET FOR RUGGED ENVIRONMENTS REF: MIL-PRF-19500/592 • N-Channel  400 Volt  < 0.315 Ohms  14 Amp TO-254AA DESCRIPTION SEMICOA’s MOSFET technology is designed for rugged environments providing excellent long term reliability. SEMICOA’s long heritage providing military grade technology and packaging allows these devices to be