2N6796 Search Results

2N6796U

Abstract: 2N6796
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6796 2N6796U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

2N6796

Abstract: TB334
Contextual Info: 2N6796 Data Sheet December 2001 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor

Contextual Info: 2N6796 MECHANICAL DATA Dimensions in mm inches TMOS FET ENHANCEMENT N - CHANNEL 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 100V 5.08 (0.200)

2N6796

Contextual Info: MOTORCLA SC XSTRS/R F 12E D | fc.3b?554 QGflbbbS S | 2N6796 M A X IM U M RATINGS Symbol Value U nit Drain-Source Voltage Vd s s 100 Vdc Drain-Gate Voltage Rq s = 1.0 m fi Vd g r 100 Vdc Vg s ±20 Vdc Id 8.0 32 Rating Gate-Source Voltage CASE 79-05, STYLE 6

Contextual Info: 4302271 0053701 m b • HAS 2N6796 2 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features TO-205AF BOTTOM VIEW • 8.0A, 100V • rDS(on = 0 .1 8 « • SOA is Power-Dissipation Limited SOURCE • Nanosecond Switching Speeds

1RF9130

Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
Contextual Info: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790

JANTX2N6796

Abstract: 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6798 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798
Contextual Info: 2N6796, 2N6796 2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

2N6796

Abstract: 2N6795
Contextual Info: POWER MOSFET TRANSISTORS 100 Volt, 0.18 Ohm N-Channel FEATURES • • • • • ITX 2N6795 JTX, JTXV 2N6796 DESCRIPTION The U nitrode power M O SFET design utilizes the m ost advan ce d technology available. This efficien t design a ch ieves a very low Rosiom and a high transconductance.

2N6796

Contextual Info: 2N6796 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.

Contextual Info: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These

2N6880

Abstract: 2N6798 JANTXV
Contextual Info: 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These

2N6796

Contextual Info: 2N6796 MECHANICAL DATA Dimensions in mm inches TMOS FET TRANSISTOR N – CHANNEL 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 )

2N6796

Abstract: TB334
Contextual Info: 2N6796 Data Sheet November 1998 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET • 8A, 100V • rDS ON = 0.180Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device

NS3001

Contextual Info: 2N6796 MECHANICAL DATA Dimensions in mm inches TMOS FET TRANSISTOR N – CHANNEL 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 0.41 (0.016)

DD 127 D TRANSISTOR

Abstract: transistor DD 127 D 2N6880 2N6798 2N6796 2n6796 jantx 2N6796 JANTXV 2N6802 2n6800 2N6798 JANTXV
Contextual Info: 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These

DD 127 D transistor

Abstract: 2n6798u 2N6796U
Contextual Info: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These

2N6796

Contextual Info: 0 3 H A R R 2N6796 I S N-Channel Enhancem ent-M ode Power Field-Effect Transistor A u g u st 1991 Package Features T 0 -2 0 5 A F BOTTOM VIEW • 8.0A, 100V • rDS on = 0 .1 8 0 • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

Contextual Info: 2N6796+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)

2N6796LCC4

Contextual Info: 2N6796LCC4 MECHANICAL DATA Dimensions in mm inches 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 N-CHANNEL POWER MOSFET 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 7 6 5 4 3 0.76 (0.030) 0.51 (0.020)

2N6796 HARRIS

Abstract: 2n6796 jantx qpl-19500 2N6756 2N6796 diode332 2N6770 JANTX 2N6897
Contextual Info: Standard Power MOSFETs 2N6796 F ile N u m b e r 1594 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 8.0A, 100V ros on = 0.18 fi Features: • SOA is po w e r-d issip ation lim ite d

1N7001

Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
Contextual Info: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR

2N7003

Abstract: 2N7009 2N7011 2N7073 G50-12C1 2N6755 2N6756 2N6757 2N6758 2N6759
Contextual Info: - 248 M - € 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 f- +• */!/ * tt € f f t * £ ÍS T a = 2 5 '0

2n6796

Abstract: MOSFET
Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINQRELO, NEW JERSEY 07081 U.SA 2N6796 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications

diode by 26E

Abstract: diagram pulsa 2N6796 DIODE ON u1E
Contextual Info: 3875081 G E SOLID STATE Dll dÎF| 3fl7SDfil DD1Û41A □ I T ’ S ?-£>? sian a a ra row er M O SFET s 2N6796 File Num ber 1594 Power MOS Field-Effect Transistors p N-Channel Enhancement-Mode Power Field-Effect Transistors