2N6765 Search Results

1N6801

Abstract: 2N6767 2n6800 2N6755 2N6756 2N6757 2N6758 2N6759 2N676 2N6761
Contextual Info: - 248 - f ft * t Vds or M € tt € i Vdg V 2N6755 IR N 60 2N6756 N 100 IR 2N6757 IR N 150 2N6758 N 200 IR 2N6759 IR N 350 2N6Ï6Û N 400 IR 2N6761 N 450 IR 2N6762 N 500 IR 2K6763 IR N 60 2N6764 IR N 100 2N6765 IR N 150 2N6766 IR N 200 2N6767 IR N 350 2N6768

TO-204AE

Contextual Info: NATL N-Channel Power MOSFETs N-Channel Power MOSFETs Continued IRFP441 IRF442 IRF840 IRF841 IRF842 IRF843 2N6764 IRFP1S0 IRFP151 IRF152 2N6765 2N6766 IRF250 IRFP250 IRF251 - 150 E4 4 60 1600 350 150 E4 1.1 4 60 1600 350 150 E4 0.25 0.85 4 60 1600

2N6766

Abstract: 2N6765
Contextual Info: FAIRCHILD SEM ICONDUCTOR A4 3469674 FAIRCHILD SEMICONDUCTOR DE| 34bU74 ODaTfllS 0 | ~ 8 4D 2 7 8 1 5 D 2N6765/2N6766 N-Channel Power MOSFETs, 30 A, 150 V / 200 V FA IR C H ILD A Schlumberger Company T-39-13 Power And Discrete Division_

1N7001

Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
Contextual Info: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR

2N6766

Abstract: AN6765 2N6166 2N6765 rN6765 iN6765 CSSR
Contextual Info: Standard Power MOSFETs 2N6765, 2N6766 File N u m b e r 1591 Power MOS Field-Ef fect Transistors N-CHANNEL EN HANCEM ENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 25 A and 30 A, 150 V and 200 V rosiom = 0.085 O and 0.12 Cl Features: •

2N7003

Abstract: 2N7009 2N7011 2N7073 G50-12C1 2N6755 2N6756 2N6757 2N6758 2N6759
Contextual Info: - 248 M - € 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 f- +• */!/ * tt € f f t * £ ÍS T a = 2 5 '0

2N6166

Abstract: 2N6766 JANTX 2N6766 2N6765 y160
Contextual Info: Standard Power MOSFETs 2N6765, 2N6766 File N u m be r 1591 Power MOS Field-Ef fect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 25 A and 30 A, 150 V and 200 V rosiom = 0.085 O and 0.12 Cl Features: • SOA is powgr-dissipation limited

MTM40N20

Abstract: MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•Tc = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15

2n6152

Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90
Contextual Info: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (*typ) (max) (pF) (max) *typ (0) *typ (A) Id (A) Vg s (V) *typ (S) Id

2N5158

Abstract: 2N5159 2N5184 2n6152 2N6164 CDBCB450KCAY70 2N6757 2N6758 2N676 2N6762
Contextual Info: - ; £ H £ }± Vd s or € * Vd g % V Vg s m (ÌR=2bV) ID fi*J sé Id s : Fd Vg s th) Ciss I d (oíi ) Vd s = Coss Crss * /CH * /CH (A) (Vf) (max) (nA) Vg s (V) ( M A) (max) m ax Vd s (V) (V) (V) # B til % V g s -O Vg s (V) Id ♦typ (mA) (0) Vg s (V) ♦typ

Contextual Info: SEMELAB LT» 37E D • âl331ô? QOOOSTB SEMELAB OEC 3 1 tSST 2N 6765 2N 6766 5 ^ 7 " * o > MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm * - T /£f o o 1.6 APPLICATIONS 1 39.5 20.3 • SWITCHING REGULATORS i 169 A • CONVERTERS • MOTOR DRIVERS

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

IRF250a

Abstract: MTH8P20 MTM20N10 MTM45N15 MTP2P45 IRF240 IRF250 IRF252 MTM12N18 MTM15N20
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•T c = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15

irf250 dc motor

Abstract: IRF250 ic data
Contextual Info: 4686226 I X Y S CORP 03 4t.0L.22Li □ 0 D 0 2 D f l ¡j □ □IXYS TECHNICAL DATA SHEET August 1988 DATA S H E E T NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • . . 200V 0.085a

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

3849

Contextual Info: 4686226 I X Y S CORP □IXYS ^ d F J M böbS Sti Q je j- ^ u . TECHNICAL DATA SHEET August 1988 DATA SHE ET NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • • . 2 0 0 V

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

2N6805

Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab

jfet selector guide

Abstract: T0-220SM
Contextual Info: SEMELAB pic Type_No 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763

2n6152

Abstract: 2N5159 2N5184 2N6164 2N6755 2N6756 2N6757 2N6758 2N6759 2N676
Contextual Info: - 248 M - € tt f f t t Vd s or € i * £ Vg s ÍS T a= 2 5 '0 * /CH Vd g a s. 1 GSS Pd Id Vg s t h 1 DSS max * /CH ft % 4# fe (13=25*0 I d (o n ) Vd s = Vg s C iss Coss C rss (*typ) (max) (pF) (*typ) (max) (pF) (*typ) (max) (pF) ft & m n Vg s =0 (max)

7652n

Abstract: 2n6766
Contextual Info: • 4302571 0[153734 3ZT ■ HAS 2N 6 76 5 2N 6766 S H a r r is N -Channel Enhancem ent-M ode Power Field-Effect Transistors A u g u st 1991 Features Package T O -20 4 A E BOTTOM VIEW • 25A and 30 A , 1 50V - 2 0 0V • ro s o n = 0 .0 8 5 0 and 0 .1 2 f l

T0220H

Abstract: 2N6795 2N3824 2N3824LP 2N4391 2N4393 2N4416 2N6659 T018 T046
Contextual Info: MAE D • Ö1331Ö7 00004bS 110 ■ SMLB SEMELABL SEMELAB LTD T-ir.ot MOS TRANSISTORS Type Rei 2N3824 HR 2N3824LP HR 2N4391 EEQ 2N4392 REQ 2N4393 EEQ 2N4416 REQ 2N6659 HR 2N6660 HR 2N6661 HR 2N6661-220H-■ISO HR 2N6755 REQ 2H6756 REQ REQ 2N6757 REQ 2N6758

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle