2n6152
Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90
Contextual Info: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (*typ) (max) (pF) (max) *typ (0) *typ (A) Id (A) Vg s (V) *typ (S) Id
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2n6755t0-204aa2n6756o-204aa+142n67572n67582n6791o-205af2n67922n61521n70002n61b2n6761n70012n51842n61642n6800ixtp4n90
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2N5158
Abstract: 2N5159 2N5184 2n6152 2N6164 CDBCB450KCAY70 2N6757 2N6758 2N676 2N6762
Contextual Info: - ; £ H £ }± Vd s or € * Vd g % V Vg s m (ÌR=2bV) ID fi*J sé Id s : Fd Vg s th) Ciss I d (oíi ) Vd s = Coss Crss * /CH * /CH (A) (Vf) (max) (nA) Vg s (V) ( M A) (max) m ax Vd s (V) (V) (V) # B til % V g s -O Vg s (V) Id ♦typ (mA) (0) Vg s (V) ♦typ
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2n6757o-204aa2n67582n675s+122n6791o-205af2n67922n67932n51582n51592n51842n61522n6164cdbcb450kcay702n6762n6762
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2N3824
Abstract: 2N6660Q 2N6660CSM4-JQR-B TO276AB 2N4393CSMJ
Contextual Info: Search Results Part number search for devices beginning "2N3824" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) 2N3824 N-Channel TO72 50V - 0.3W -
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2n38242n3824lp2n3824-to462n3824-to72+72n66602n6660csm42n6660csm4-jqr-b2n6660-jqr-b2n6660qto276ab2n4393csmj
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2N6792
Abstract: 2N6791
Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.8 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rouom and a high transconductance. Fast Switching
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2n67912n6792 |
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9358
Abstract: 2n6797 2N6781 2N6787 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130
Contextual Info: XOR HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE D IN TERNATI ONAL RECTIFIER • 4ÔS54S2 OOIOSST □ ■ TO-39 Package T-39-Û3 N-CHANNEL Types Iq cont max 0.18 0.18 0.25 0.3 0.3 0.4 0.6 0.6 0.8 TC - 25°C A 8.0 8.0 7.0 6.0 6.0 5.0 3.5 3.5 3.0 'DM
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t-39-irff1312n6795irff133+9irff1212n6787irff123irff1112n6781irff11393582n6797irff130
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2N6805
Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab
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2s811882s88912s8632ksml3552+14sml3575sml3578sml69501sml695092n68052n64562n680320c362nj771rca 2n667420c842n66172nj771a2n6525
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jfet selector guide
Abstract: T0-220SM
Contextual Info: SEMELAB pic Type_No 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763
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2n38242n3824lp2n43912n4391csm+82n43922n4392csm2n43932n4393csm2n44162n5045jfet selector guidet0-220sm
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2n6152
Abstract: 2N5159 2N5184 2N6164 2N6755 2N6756 2N6757 2N6758 2N6759 2N676
Contextual Info: - 248 M - € tt f f t t Vd s or € i * £ Vg s ÍS T a= 2 5 '0 * /CH Vd g a s. 1 GSS Pd Id Vg s t h 1 DSS max * /CH ft % 4# fe (13=25*0 I d (o n ) Vd s = Vg s C iss Coss C rss (*typ) (max) (pF) (*typ) (max) (pF) (*typ) (max) (pF) ft & m n Vg s =0 (max)
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2n6755t0-204aa2n6756o-204aa+112n67572n67582n6791o-205af2n67922n61522n51592n51842n61642n67592n676
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LT812
Contextual Info: UN IT RO DE CORP 9347963 TE ¿ F | cî 3M7cib3 U N I T R O D E CORP 92D 10554 GD1DSSM D POWER MOSFET TRANSISTORS 4 0 0 V olt, 1 .8 O h m N -Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability
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lt812 |
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T0220H
Abstract: 2N6795 2N3824 2N3824LP 2N4391 2N4393 2N4416 2N6659 T018 T046
Contextual Info: MAE D • Ö1331Ö7 00004bS 110 ■ SMLB SEMELABL SEMELAB LTD T-ir.ot MOS TRANSISTORS Type Rei 2N3824 HR 2N3824LP HR 2N4391 EEQ 2N4392 REQ 2N4393 EEQ 2N4416 REQ 2N6659 HR 2N6660 HR 2N6661 HR 2N6661-220H-■ISO HR 2N6755 REQ 2H6756 REQ REQ 2N6757 REQ 2N6758
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2n38242n3824lp2n43912h4392+102n43932n44162n66592n66602n66612n6661-220h-t0220h2n6795t018t046
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2c4152c4252c4442c746+162n1131l2n11322n1132csm2n1132dcsm2n12082n1209diode 400v 5alm1083bzy55ctransistor 2n1208bc109 spiceirf9024cv7404mnt6337jsml1258sml1004rgn
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UFN540
Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
Contextual Info: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State
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u2ta506u2ta508u2ta510861-6s40+10ufn540ufn833upt613ufnf130ufn451u2t105u2t305tq-66ufn432ufn450
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2N6791
Abstract: 2N6792
Contextual Info: S E ME L AB LT» 37E T> m Ö1331Ö7 SEMELAB 2N 6791 2N 6792 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm I 1 APPLICATIONS • INVERTERS • MOTOR CONTROLS • CHOPPERS PIN 1 -S o u rce P IN 2 -G a te PIN 3 Drain and Case TO 39 ABSOLUTE M AXIM UM RATINGS T ^ = 25°C unless otherwise specified
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t-39-092n67912n67922n8792+1tj-150oc
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