IRFF130 Search Results

Contextual Info: , LJnc. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 IRFF130 Features 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET • 8.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

IRFF130

Contextual Info: PD - 90430C IRFF130 JANTX2N6796 JANTXV2N6796 REF:MIL-PRF-19500/557 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF130 BVDSS 100V RDS(on) 0.18Ω ID 8.0A  The HEXFET technology is the key to International

Contextual Info: i H A R R IRFF130, IRFF131, IRFF132, IRFF133 i s s e - c o . o u c t o r 7.0A and 8.0A, 80V and 100V, 0.18 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 7.0A and 8.0A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

18261

Abstract: IRFF130 IRFF131 IRFF132 IRFF133
Contextual Info: 3 |t | 3 û 75[]ô 1 0 0 1 0 2 5 e! b ~ 38 750 81 G E S O L I D S T A TE 0 1 E 18259 Standard Power M O S F E T s _ IRFF130, IRFF131, IRFF132, IRFF133 D File N um ber 1564 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

IRFF

Abstract: IRFF130 IRFF131
Contextual Info: [FUT FIELD EFFECT POWER TRANSISTOR IRFF130,131 8.0 AMPERES 100, 60 VOLTS RDS ON = 0.18 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRFF130

Abstract: TA17411 TB334 AVALANCHE TRANSISTOR
Contextual Info: IRFF130 Data Sheet March 1999 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET 1564.3 Features • 8.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFF130R

Abstract: IRFF131R IRFF132R IRFF133R
Contextual Info: Rugged Power MOSFETs File Number 2024 IRFF130R, IRFF131R, IRFF132R, IRFF133R Avalanche Energy Rated N-Channel Power MOSFETs 7 ,0A and 8.0A, 60V-100V rDs on = 0 .1 8 0 a nd 0.25Q N-CHANNEL ENHANCEMENT MODE D Features: • Single pulse avalanche energy rated

IRFF130

Abstract: JANTX2N6796 JANTXV2N6796
Contextual Info: PD - 90430C IRFF130 JANTX2N6796 JANTXV2N6796 REF:MIL-PRF-19500/557 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF130 BVDSS 100V RDS(on) 0.18Ω ID 8.0A  The HEXFET technology is the key to International

TA17411

Abstract: IRFF130
Contextual Info: IRFF130 Data Sheet Title FF1 bt 0A, 0V, 80 m, March 1999 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: •I iT ! 43D5271 H A R G0S414D R DES IS HAS IRFF130/131/13 2/133 IRFF130R/131 R /132R/133R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO -2 0 5 A F • 7.0A and 8.0A, 80V - 100V • rDS on = 0.18 fl and 0 .2 5 fi • Single Pulse Avalanche Energy Rated*

IRFF130

Contextual Info: IRFF130, IRFF131, IRFF132, IRFF133 S E M I C O N D U C T O R 7.0A and 8.0A, 80V and 100V, 0.18 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 7.0A and 8.0A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

F111

Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25
Contextual Info: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR

IRFF130

Abstract: IRFF131 IRFF132 IRFF133 C 3259
Contextual Info: -Standard Power MOSFETs IRFF130, IRFF131, IRFF132, IRFF133 File Num ber 1564 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

IRFF130

Abstract: TA17411 TB334
Contextual Info: IRFF130 Data Sheet January 2002 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

transco

Abstract: IRFF131
Contextual Info: ih a r r is IRFF130, IRFF131, IRFF132, IRFF133 7.0A and 8.0A, 80V and 100V, 0.18 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 7.0A and 8.0A, 80V and 100V • High Input Im pedance These are N-Channel enhancement mode silicon gate

IRFF131

Abstract: IC 3909 G-337 G337 diode 341F IRFF130 IRFF132 IRFF133 g337 ir mosfet 337
Contextual Info: 11E D I 4ÖSS4S2 0001350 7 | i n t e r n a t i o n a l Data Sheet No. PD-9.341F r e c t i f i e r INTERNATIONAL RECTIFIER IÖR T-39-09 HEXFET TRANSISTORS IRFF130 IRFF131 IRFF132 IRFF133 N-CHANNEL POWER MOSFETs T Ü -3 9 PACKAGE 100 Volt, 0.18 Ohm HEXFET

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRF09120

Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
Contextual Info: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

F111

Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120
Contextual Info: - 258 - f t M t± £ € A£ ft Vd s or i Vd g % V Vg s ( V) & ( T a = 2 5 cC ) Id 1! Idss Igss Pd * /C H * /CH (A ) (W) ( n A) Vg s ( V) ( M A) Vg s Vd s (V ) th ) % Vd s = Vg s min max ( V) ( V) Id ( itA) fa ft Fo s(o n ) (Ta=25^0) I d ( on) g fs C iss

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main