IRFF122 Search Results

IRFF122

Abstract: IRFF123
Contextual Info: IRFF122,123 F [ f F 5.0 AMPERES 100, 60 VOLTS Rd S ON = 0.4 n HELD EFFECT POWER TRANSISTOR Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

Contextual Info: IRFF120, IRFF121, IRFF122, IRFF123 S E M I C O N D U C T O R 5.0A and 6.0A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 5.0A and 6.0A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRFF120, IRFF121, IRFF122, IRFF123 HARRIS S E M I C O N D U C T O R 5.0A and 6.0A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 5.0A and 6.0A, 80V and 100V • High Input Im pedance These are N-Channel enhancement mode silicon gate

IRFF121

Abstract: IRFF120 IRFF122 IRFF123
Contextual Info: D E | 3Ö7SDÖ1 0D1ASS4 7 f □ 1 3875081 6 E SOLID STATE 0 1E 18254 D T-ïf-O l - Standard Power M OSFETs IRFF120, IRFF121, IRFF122, IRFF123 File Number 1563 Power MOS Field-Effect Transistors N -CH A N N EL E N H A N C EM EN T M ODE N-Channel Enhancement-Mode

OA 161 diode

Abstract: IRFF120 IRFF121 IRFF122 IRFF123 3ws7
Contextual Info: Standard Power MOSFETs IRFF120, IRFF121, IRFF122, IRFF123 File N u m b e r 1563 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 5.0A and 6.0A, 60V-100V rDs on = 0.30 Q and 0.40 O Features:

F111

Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25
Contextual Info: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR

IRFF122

Abstract: ANA1-20
Contextual Info: 8 368602 SOL ITRON DEVICES INC hi fl3bflb DS DD0D2flfl fc, | S o litro n _ T-39-09 SFN10GC9 D E V I C E S , IIMC. POWER MOS DEVICE 1 0 0 V /5 A N Channel, TO-39 Package, IRFF122 Equivalent The new Solitron Power MOS technology combines the

Contextual Info: i H A R R IRFF120, IRFF121, IRFF122, IRFF123 i s s e - c o . o u c t o r 5.0A and 6.0A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 5.0A and 6.0A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

2N6788 motorola

Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
Contextual Info: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles

IRF09120

Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
Contextual Info: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ

VN88AF

Abstract: VN89AF VN66AD VN67AD VN88AF SILICONIX VN46AF VN66AF 2N6657 VN0401D IRF622
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

mospower cross vn66af

Abstract: VN88AF CROSS REFERENCE VN99AB OLS 049 2SJ54 sony IRF542 2N6658 CROSS REFERENCE 2n6661 VN0209N2 VN88
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

irf540 TTL

Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

Equivalent IRF 44

Abstract: irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422 IRF522
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

irf540 equivalent

Abstract: IRF541 equivalent vn89af equivalent IRF540 irf640 vn0106n1 VN0109n5 IRFF121 IRF232 IRF422
Contextual Info: Siliconix 1-1? f l Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

F111

Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120
Contextual Info: - 258 - f t M t± £ € A£ ft Vd s or i Vd g % V Vg s ( V) & ( T a = 2 5 cC ) Id 1! Idss Igss Pd * /C H * /CH (A ) (W) ( n A) Vg s ( V) ( M A) Vg s Vd s (V ) th ) % Vd s = Vg s min max ( V) ( V) Id ( itA) fa ft Fo s(o n ) (Ta=25^0) I d ( on) g fs C iss

ir 222

Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: 43 32271 H A Q0S413S R R ?b ô • HAS I S IR F F 1 2 0 /1 2 1 /1 2 2 /1 2 3 IR F F 1 2 0 R /1 2 1 R /1 2 2 R /1 2 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 0 5 A F • 5.0A and 6.0A, 80V - 100V • rDS(on = 0 .3 0H and 0 .40H

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

2N6658

Abstract: VN66AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150

VN66AF equivalent

Abstract: VN67AF equivalent mospower cross vn66af VN66AF 2N6658 IRF540 irf540 equivalent irf540 TTL VN67AF VN88AD
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

irf 80 n

Abstract: irf 30A IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840 VNP002A
Contextual Info: Ü Ü A C D ^ U /C D M i v i a D r /\W i iv iv ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ /\r f^ .n \M é g ^ i^ v iv i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BV qss Volts 4 5 0 -5 0 0 TO-3 TO-220 S ilic o n ix

2SJ54 sony

Abstract: VN0104N1 VN0108N2 VN0109n5 IRF232 IRF240 IRF422 IRF522 irf532 equivalent IRF632
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170