VN88AF Search Results

VNDQ09

Contextual Info: atS g& VN88AFD N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY b A V (BR)DSS 4 80 Performance Curves: FRONT VIEW TO-220SD o 1.29 VNDQ09 1 SOURCE 2 GATE 3 & TAB - DRAIN 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) SYMBOL LIMITS

VN0808M

Abstract: VNDQ09 VNDQ3CHP VN88A TO-205AD
Contextual Info: VNDQ09 N-Channel Enhancement-Mode MOSFETs iTSS?SS.xd DEVICE TYPE PACKAGE Single TO-39 TO-205AD Single TO-237 • VN0808M Single TO-220SD • VN88AFD Quad 14-Pin Plastic • VQ1006J Quad 14-Pin Dual-ln-Line • VQ1006P Single Chip • Available as VNDQ3CHP

2N6661

Abstract: VN88AFD
Contextual Info: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS

VN88AF

Abstract: TO202AA VN88AF SILICONIX VN89AF VN80AF TO-202AA VN88AFA TRANSF S5S-02 202-AA
Contextual Info: £ *> 5- 02.1 s VN88AF • VN89AF ■ VN80AF Siliconix N-Channel Enhancement Mode MOSPOWER PRODUCT SUMMARY APPLICATIONS ■ Switching Regulators ■ Converters ■ Motor Drivers PIN 1 - Source PIN 2 * Gate PIN 3 & TA B - Oram Part Number BVOSS VoltJ VN88AF

TO-205AD

Abstract: 2N6661 VN88AFD
Contextual Info: 2N6661/VN88AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications D D D D

2N6661

Abstract: VN88AFD
Contextual Info: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V (B R )D SS M i n 0 0 2N6661 90 4 @ V GS= 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGs = 1 0 V 0.8 to 2.5 1.29 ro s ( o n ) Max (fì) V G S (th ) b (A) (V) FEATURES

VN88AFD

Abstract: N-CHANNEL MOSFET 2N6661
Contextual Info: 2N6661/VN88AFD Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications

2N6661

Abstract: 2N6661 Siliconix VN88AFD marking code vishay SILICONIX to-39
Contextual Info: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS

2N666I

Contextual Info: Tem ic 2N6661/VN88AFD Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) fDS(on) Max (fi) V GS(th) (Y ) I d (A) ï: ; 2N6661 90 4 @ VGs = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGs = 10 V 0.8 to 2.5 1.29 Features Benefits

88AFD

Contextual Info: Tem ic 2N6661/VN88AFD Se c o n du c t o r s it i N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR DSS Min (V ) rus< on) M a x ( f i ) V g S(Ui ) (V ) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 I d (A ) 0.9 VN 88AFD 80 4 @ VGs = 10 V

VN88AFD

Abstract: 2N6661
Contextual Info: 2N6661/VN88AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications D D

2N6661

Abstract: VN88AFD
Contextual Info: 2N6661/VN88AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications D D

vn88afd

Abstract: 2N6661 2N6661S
Contextual Info: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS

VN88AFA

Abstract: VN46AFA VN46AF VN66AF VN66AFA VN88AF VN40AFA
Contextual Info: VN46AFA Series 1.2 AMPERES 40-80 VOLTS RPS ON = 3.0, 4.0 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in

mospower cross vn66af

Abstract: VN88AF CROSS REFERENCE VN99AB OLS 049 2SJ54 sony IRF542 2N6658 CROSS REFERENCE 2n6661 VN0209N2 VN88
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

irf540 TTL

Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

Equivalent IRF 44

Abstract: irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422 IRF522
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

VN99AB

Abstract: VN66AF 2N6658 VN46AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150

irf540 equivalent

Abstract: IRF541 equivalent vn89af equivalent IRF540 irf640 vn0106n1 VN0109n5 IRFF121 IRF232 IRF422
Contextual Info: Siliconix 1-1? f l Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

2N6658

Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0

ir 222

Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: 2N6661JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS