VQ1000P
Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25
|
OCR Scan
|
vn10kevn10leto-52vn2406m+14vn2410mvw1706mvn1710mvn1206mvn1210mvn0808mvq1000pvn10lsiliconix vn10kmvn0610lvn10kmvn10lmvn2222lvq1000j
|
PDF
|
VN0610L
Abstract: TL032
Contextual Info: N-Channel Enhancement-Mode MOS Transistors, Zener Gate Protected CQIOOIC CORPORATION VN0610L / VN10KE/ VN10KM/ VN10KT ORDERING INFORMATION FEATURES • Available in Surface Mount SOT-23 • Zener protected • Low rDS on <5fl • 60V Bv APPLICATIONS Temperature Range
|
OCR Scan
|
vn0610lvn10ke/vn10km/vn10kt+5ot-23o-237150ccvn10ketl032
|
PDF
|
buz 350 equivalent
Abstract: VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM
Contextual Info: Siliconix 1-1? f l MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25
|
OCR Scan
|
o-220vn1000dirf522vn1000a+13irf540irf632irf640buz 350 equivalentvn0109n5 analogvn10km equivalentsupertex vn10kevn67ad analogvn0300m equivalentvq1004 equivalentvq1004sony 2sj54siliconix vn10km
|
PDF
|
VN0300M
Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25
|
OCR Scan
|
vn10kevn10leto-52vn2406m+16vn2410mvw1706mvn1710mvn1206mvn1210mvn0808mvn0300msiliconix vn10kmvn0606m25xxvn0300dvp1001pvq1001jvq3001jvq3001pvq7254j
|
PDF
|
2N6658
Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
|
OCR Scan
|
vn10kevn10leto-52vn2406m+16vn2410mvw1706mvn1710mvn1206mvn1210mvn0808m2n6658vn66afsiliconix vn10kmvn89afvn88af2n66572n6656vn67vn80afvn89ad
|
PDF
|
MOSFET vn2222l
Abstract: VN10KLS
Contextual Info: VN0610L, VN10KE/KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 5 @ VGS = 10 V
|
Original
|
vn0610lvn10ke/klsvn2222lvn10ke+5vn10klso-226aas-58620--rev21-jun-99mosfet vn2222l
|
PDF
|
TO206AC
Contextual Info: VNDP06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-52 TO-206AC • VN10KE Single TO-92 (TO-226AA) • VN0610L, VN2222L Single TO-237 • VN10KM Single Chip • Available as VNDP1CHP .Bissate DEVICE TYPÍCAL CHARACTERISTICS Ohmic Region Characteristics
|
OCR Scan
|
vndp06o-206aco-226aao-237+5vn10kevn0610lvn2222lvn10kmto206ac
|
PDF
|
VN10KM
Contextual Info: ÜBSSb VNDP1 DIE N-Channel Enhancement-Mode MOS Transistor VNDP1CHP* VN0610L VN10KE VN10KM VN2222L ‘ Meets or exceeds specification for all part numbers listed below Gate Pad 0.0088 0 . 224 0.0063 ( 0.161 Source Pad For additional design information please consult the
|
OCR Scan
|
vn0610lvn10kevn10kmvn2222l+1vndp06
|
PDF
|
hh 004 TO92
Abstract: VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35
|
OCR Scan
|
vn10kevn10leto-52vn2406m+12vn2410mvw1706mvn1710mvn1206mvn1210mvn0808mhh 004 to92vn2406lvn1706mvn2406bsiliconix vn10kmvn1206l
|
PDF
|
siliconix VN10KM
Abstract: VN10KM VN2222KM bsr65 BSR64 VN10LM VN2222LM VQ1000J/P VN0610L VN10KE
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VN2406M
|
OCR Scan
|
vn10kevn10leto-52vn2406m+15vn2410mvw1706mvn1710mvn1206mvn1210mvn0808msiliconix vn10kmvn10kmvn2222kmbsr65bsr64vn10lmvn2222lmvq1000j/pvn0610l
|
PDF
|
VN88AD
Abstract: VN66AF 2N6658 VN89AF VN0808M VN88AO siliconix VN10KM VN46AF BSR67 VN89AD
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3
|
OCR Scan
|
vn10kevn10leto-52vn2406m+15vn2410mvw1706mvn1710mvn1206mvn1210mvn0808mvn88advn66af2n6658vn89afvn88aosiliconix vn10kmvn46afbsr67vn89ad
|
PDF
|
VN10KM MOSFET
Abstract: siliconix VN10KM VN10KM VN10KM equivalent MOSFET vn2222l VN10K VN10KE VN0610L VN10KT VN2222L
Contextual Info: VN0610L, VN10KE/M/T, VN2222L N-Channel Enhancement-Mode MOSFET Transistors Zener Gate Protected Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 VN10KM
|
Original
|
vn0610lvn10ke/m/tvn2222lvn10ke+9vn10kmvn10kto-226aas-52426--revvn10km mosfetsiliconix vn10kmvn10km equivalentmosfet vn2222lvn10k
|
PDF
|
VN10KM equivalent
Abstract: siliconix VN10KM VN10K equivalent VN10KM siliconix VN10K VN10KE vn10k VN0610L to206
Contextual Info: Siliconix incorporated B O c O « */ ^ VN10KM, V IN I u r v i v i VN0610L S O o-ZbŸ VN10KE MOSPOWER N-Channel Enhancem ent M ode Transistors Zener Diode Protected Gate •TO-92 TO -237 FRO NT V IEW PRODUCT SUM M ARY T 0 -2 0 6 A C BO TTO M VIEW a PART N U M BER
|
OCR Scan
|
vn10kmvn0610l5o5-zbfvn10keo-237+8o-206vn10kevn10km equivalentsiliconix vn10kmvn10k equivalentsiliconix vn10kvn10kto206
|
PDF
|
siliconix VN10KM
Abstract: VN0300D VN0300M VP1001P VQ1001J VQ1001P VNMH03
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 •d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25
|
OCR Scan
|
vn10kevn10leto-52vn2406m+13vn2410mvw1706mvn1710mvn1206mvn1210mvn0808msiliconix vn10kmvn0300dvn0300mvp1001pvq1001jvq1001pvnmh03
|
PDF
|
|
|
siliconix VN10KM
Abstract: VQ1001J VQ1001P
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) • d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25
|
OCR Scan
|
vn10kevn10leto-52vn2406m+9vn2410mvw1706mvn1710mvn1206mvn1210mvn0808msiliconix vn10kmvq1001jvq1001p
|
PDF
|
VN10KM
Abstract: VN10K 55C 15v ZENER DIODE C06 60V VN10KE vn10kt VN0610L XVN10KM VN010KE
Contextual Info: I » U lU W It N-Channel Enhancement-Mode MOS Transistors, Zener Gate Protected CORPORATION VN0610L / VN10KE/ VN10KM/ VN10KT ORDERING INFORMATION FEATURES • • • • Part Available in Surface Mount SOT-23 Zener protected Low rDS on <5£i 60V Bv VN0610L
|
OCR Scan
|
vn0610lvn10ke/vn10km/vn10kt+9ot-23vn10kevn10kmo-237vn10k55c 15v zener diodec06 60vxvn10kmvn010ke
|
PDF
|
VN10KLS
Abstract: VN0610L VN10KE VN2222L
Contextual Info: _ VN0610L, VN10KE/KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (Q ) V GS(th) (V ) I d (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN0610L 5 @ VGs = 10 V 0.8 to 2.5
|
OCR Scan
|
vn0610lvn10ke/klsvn2222lvn10ke+4vn10klso-226aas-58620-jun-99
|
PDF
|
"TO-52 package"
Abstract: LE17 VN10KE
Contextual Info: N-CHANNEL ENHANCEMENT MODE MOSFET VN10KE • Low RDS on , VGS(th), CISS And Fast Switching Speeds • Hermetic TO-52 Metal package. • Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc.) Applications • Screening Options Available
|
Original
|
vn10keo-206acto-52 packagele17 |
PDF
|
0610L
Abstract: 2222l 10kls VN10KLS
Contextual Info: _ VN0610L, VN10KE/KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (Q ) V GS(th) (V ) Id (A) 5 @ V GS = 1 0 V 0.8 to 2.5 0.27 VN 0610L 5 @ V GS = 1 0 V
|
OCR Scan
|
vn0610lvn10ke/klsvn2222l0610l+510kls2222lvn2222l_o-226aavn10kls
|
PDF
|
vn10km
Contextual Info: VN0610L, VNIOKE/M/T, VN2222L N-Channel Enhancement-Mode MOSFET Transistors Zener Gate Protected Product Summary Part Number *DS on Max (Q) V GS(th)(V ) ID (A) VN0610L 5 @ V GS= 1 0 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS= 10 V 0.8 to 2.5 0.17 5 @ VGS= 10 V 0.8 to 2.5
|
OCR Scan
|
vn0610lvn2222lvn10kevn10km+4vn10kto-206acs-52426--rev14-apr-97
|
PDF
|
VN10KM
Abstract: B0826 VN0610L VN10KE VN2222L
Contextual Info: VN0610L, VN10KE/KM, VN2222L Siliconix NĆChannel EnhancementĆMode MOS Transistors Zener Gate Protected Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.17 5 @ VGS = 10 V
|
Original
|
vn0610lvn10ke/kmvn2222lvn10ke+4vn10kmo226aap-38480--revb0826
|
PDF
|
VQ1000P
Abstract: VN0610L VQ1000J VQ1000J/P parameter diode IN4001 siliconix VN10KM IN4001 VN10KE VN10KM VN10LE
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25
|
OCR Scan
|
vn10kevn10leto-52vn2406m+14vn2410mvw1706mvn1710mvn1206mvn1210mvn0808mvq1000pvn0610lvq1000jvq1000j/pparameter diode in4001siliconix vn10kmin4001vn10km
|
PDF
|
VN10KM
Abstract: siliconix VN10KM VN2222KM BSR64 BSR65 IN4933 VN10LM VN2222LM
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 •d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25
|
OCR Scan
|
vn10kevn10leto-52vn2406m+14vn2410mvw1706mvn1710mvn1206mvn1210mvn0808mvn10kmsiliconix vn10kmvn2222kmbsr64bsr65in4933vn10lmvn2222lm
|
PDF
|
zener diode marking CODE VN S2
Abstract: VN10KM MOSFET siliconix VN10KM VN0610L VN10KE VN10KM VN10KT VN2222L YS 150 017
Contextual Info: M IC VN0610L, VNIOKE/M/T, YN2222L Semiconductors N-Channel Enhancement-Mode MOSFET Transistors Zener Gate Protected Product Summary rDS<on Max {Q) V GS<th) V) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 P art Number V(BR)DSS Min (V)
|
OCR Scan
|
vn0610lvn10ke/m/tvn2222lvn10ke+8vn10kmvn10kto-226aas-52426zener diode marking code vn s2vn10km mosfetsiliconix vn10kmys 150 017
|
PDF
|
