VN2222L Search Results

Contextual Info: Oi Supertex me. VN 2 2 2 2 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information bv d ss/ Order Number / Package R DS ON I d (ON) b v dgs (max) (min) TO-92 60V 7.5S1 0.75A VN2222LL Features Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a

VN2222LL

Contextual Info: TELEDYNE C O M P O N EN T S 3bE flH7faD2 OOÜ7fllfl M • TSC D ^ r-3S'25 WTELEDYNE COMPONENTS VN0610LL VN2222LL N-CHANNEL ENHANCEMENT-MODE DMOS POWER FETs FEATU RES A B S O L U T E M A X IM U M R A T IN G S ■ ■ ■ Drain-Source Voltage. +60V

2222l

Contextual Info: Tem ic SM« * VN0610L, VNIOKE/KM, VN2222L N-Channel Enhancement-Mode MOS Transistors Zener Gate Protected Product Summary P a rt N um ber V BR DSS M in (V) VN0610L r DS(on) M ax (Q) 0.8 to 2.5 0.27 5 @ V GS = 10 V 0.8 to 2.5 0.17 5 @ V GS = 10 V 0.8 to 2.5

10kls

Abstract: 0610L VN10KLS 2222L VN0610L VN2222L
Contextual Info: VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V D-S MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5

TD2A

Abstract: B7S2 BSN10A TLC2272 4066 74AC04 MAX232N DATASHEET TD1A S1 UM1 MAX232N
Contextual Info: 20k CCW G N D 1 CONS1:4 CONS1:3 2 3 QP3 MPS2907A XM1 10MHz 2 A 1 3 14 n/c 15 MCLR 1N5242B 2 35 12 VCC QO1 DS1 1N5817 VN2222LL DO1 AOUT1 AOUT2 TRIGGER VREF TP2 XO1 GND GND <OSC2 MCLR VDD VDD 3 4 5 6 7 8 22p 44 43 42 41 39 38 37 36 TD1A TD1B TD2A TD2B DISCH

10kls

Abstract: 2222l 0610L VN10KLS VN2222L marking CODE VN VN0610L
Contextual Info: VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V D-S MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5

VN2222LL

Contextual Info: VN2222LL N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 7.5Ω 0.75A Order Number / Package TO-92 VN2222LL Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

MOSFET vn2222l

Abstract: VN10KLS
Contextual Info: VN0610L, VN10KE/KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 5 @ VGS = 10 V

VN2222LL-G

Contextual Info: VN2222LLG Small Signal MOSFET 150 mAmps, 60 Volts N−Channel TO−92 http://onsemi.com Features • This is a Pb−Free Device* 150 mA, 60 V RDS on = 7.5 W MAXIMUM RATINGS N−Channel Symbol Value Unit Drain −Source Voltage VDSS 60 Vdc Drain−Gate Voltage (RGS = 1.0 MW)

TO206AC

Contextual Info: VNDP06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-52 TO-206AC • VN10KE Single TO-92 (TO-226AA) • VN0610L, VN2222L Single TO-237 • VN10KM Single Chip • Available as VNDP1CHP .Bissate DEVICE TYPÍCAL CHARACTERISTICS Ohmic Region Characteristics

Contextual Info: VN2222 SERIES N-Channel Enhancement-Mode MOS Transistors ÄlüSSÖSS PRODUCT SUMMARY PART NUMBER V BR DSS VN2222LL 60 VN2222LM 60 (V) "W •d (A) PACKAGE 7.5 0.23 TO-92 7.5 0.26 TO-237 3 DRAIN TO-237 Performance Curves: BOTTOM VIEW VNDS06 1 SOURCE 2 GATE 3 & TAB-DRAIN

VN10KM

Contextual Info: ÜBSSb VNDP1 DIE N-Channel Enhancement-Mode MOS Transistor VNDP1CHP* VN0610L VN10KE VN10KM VN2222L ‘ Meets or exceeds specification for all part numbers listed below Gate Pad 0.0088 0 . 224 0.0063 ( 0.161 Source Pad For additional design information please consult the

Contextual Info: VN2222LL M S u p e r te x in c . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS/ R DS ON B V ogs (max) JÎ 60V 7.50 0.75A Order Number / Package TO-92 VN2222LL Features Advanced DMOS Technology U Free from secondary breakdown □

siliconix VN10KM

Abstract: VN10KM VN10LM VN2222KM BSR64 VN2222LM VN2222 BSR65 TO-237
Contextual Info: s VN2222LM • VN2222KM VN10KM - VN 10LM ■ VN2222KM ■ VN2222LM H Siliconix 60V MOSPOWER N-Channel Enhancement M ode These power FETs are designed especially for low power high frequency inverters, inter­ face to CMOS and TTL logic, and line drivers. FEATURES

transistor vn2222

Contextual Info: VN2222LL N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2222LL is an enhancement-mode normally-off transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate

VN2222LL

Abstract: transistor SS
Contextual Info: MAXIMUM RATINGS Rating Symbol Value Unit V d SS 60 Vdc Drain-Gate V oltage Rq s = 1 M il V d GR 60 Vdc Gate-Source Voltage — C ontinuous — N on-repetitive (tp s 50 jtts) Vg s V g SM ±20 ±40 Vdc Vpk Drain-Source Voltage VN2222LL* CASE 29-04, STYLE 22

VN2222

Abstract: 2N7000 VN2222LL VN2222LM
Contextual Info: VN2222 Series N-Channel Enhancement-Mode MOS Transistors CORPORATION VN2222 Series FEATURES ORDERING INFORMATION • Low rDS on <7.5Ω Part Package VN2222LL Plastic TO-92 VN2222LM Plastic TO-237 For sorted chips in carriers see 2N7000 APPLICATIONS • Switching

VN2222LL

Contextual Info: VN2222LL N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 7.5Ω 0.75A Order Number / Package TO-92 VN2222LL Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

Contextual Info: VN2222LL* M A X IM U M RATINGS Rating D ra in -S o u rc e V o lta g e D ra in -G a te V o lta g e R q s = 1 M ül Symbol Value Unit V DSS 60 V dc VDGR. 60 Vdc V dc G a te -S o u rc e V o lta g e vgs 1 40 D ra in C u rre n t C o n tin u o u s P ulsed 'D 'D M

TO-237

Abstract: vn0605t transistor VN10 VN10 application VN0605T 70212 VN2222LM 2222 400-125 VN10LE
Contextual Info: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V

VN2222LL

Abstract: VN0610LL linear 50 Ohm Line Drivers VN-2222LL
Contextual Info: TOPAZ S E M I C O N D U C T O R DSE D | TQflSEEb OQGlOTt, b | VN0610L1, SEMICONDUCTOR ' VN2222LL - »- «- T-29-25 N -C H Â IM L ENHANCEMENT-MODE D-MOS POWER FITS ORDERING INFORMATION TO -92 Pfastic Package VN0610LL VN2222LL

VN10LE

Contextual Info: VN10LE/LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LLS 5 @ VGS = 10 V 0.8 to 2.5

Contextual Info: VN2222L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)200m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)400m Minimum Operating Temp (øC)

Contextual Info: VN2222LL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)40 I(D) Max. (A)99m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)400m Minimum Operating Temp (øC)-55