VN0610LL Search Results

VN2222LL

Contextual Info: TELEDYNE C O M P O N EN T S 3bE flH7faD2 OOÜ7fllfl M • TSC D ^ r-3S'25 WTELEDYNE COMPONENTS VN0610LL VN2222LL N-CHANNEL ENHANCEMENT-MODE DMOS POWER FETs FEATU RES A B S O L U T E M A X IM U M R A T IN G S ■ ■ ■ Drain-Source Voltage. +60V

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N -C h an n el — Enhancem ent VN0610LL 3 DRAIN 1 SOURCE MAXIMUM RATINGS Symbol Value Vd s s 60 Vdc Drain-Gate Voltage Rg S = 1 Mil vdgr 60 Vdc Gate-Source Voltage - Continuous - Non-repetltive (tp < 50 fis)

date code IEC 62

Abstract: bc107a pin out BC237 bf256c
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0610LL 3 DRAIN 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain – Gate Voltage RGS = 1 MΩ VDGR 60 Vdc Gate – Source Voltage

VN10lm

Contextual Info: VN061 OLL, VN 10LM N-Channel Enhancement-Mode MOS Transistors .B Ü fiSSS TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (BR)DSS (V) r DS(ON) (H ) (A) PACKAGE VN0610LL 60 5 0.28 TO-92 VN10LM 60 5 0.32 TO-237 Performance Curves: VNDS06 •d 1 SOURCE

TO-237

Abstract: vn0605t transistor VN10 VN10 application VN0605T 70212 VN2222LM 2222 400-125 VN10LE
Contextual Info: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V

VN2222LL

Abstract: VN0610LL linear 50 Ohm Line Drivers VN-2222LL
Contextual Info: TOPAZ S E M I C O N D U C T O R DSE D | TQflSEEb OQGlOTt, b | VN0610L1, SEMICONDUCTOR ' VN2222LL - »- «- T-29-25 N -C H Â IM L ENHANCEMENT-MODE D-MOS POWER FITS ORDERING INFORMATION TO -92 Pfastic Package VN0610LL VN2222LL

VN10LE

Contextual Info: VN10LE/LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LLS 5 @ VGS = 10 V 0.8 to 2.5

Contextual Info: VN0610LL, VN10LM N-Channel Enhancement-Mode MOS Transistors • mb g GQIOOIC m CORPORATION ^ VN0610LL /VN10LM FEATURES ORDERING INFORMATION • L o w rog on <SQ Part APPLICATIONS VN061OLL Plastic TO-92 VN 10LM Plastic TO-237 For sorted chips in carriers see 2N7000

222LL

Abstract: VN10LLS 10LLS VN0605T VN0610LL VN2222LL
Contextual Info: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 5 @ VGS = 10 V

VN0605T

Abstract: VN0610LL VN10LE VN10LM VN2222LL VN2222LM
Contextual Info: VN10/0605/0610/2222 Series Siliconix NĆChannel EnhancementĆMode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM

mosfet vn10

Abstract: vn10 VN2222LM mosfet vn10lm
Contextual Info: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V

Contextual Info: MOTOROLA Order this document by VN0610LL/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N-Channel — Enhancement VN0610LL 3 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit VDSS 60 Vdc Drain-Gate Voltage Rg s = 1 Vd g r 60 Vdc Gate-Source Voltage - Continuous

Contextual Info: JEFSSSÄS VNDS1 DIE N-Channel Enhancement-Mode MOS Transistor VNDS1CHP* 2N7000 2N7002 BS170 VN10LM VN0605T VN0610LL VN2222LL VN2222LM VQ1000J/P VNDS06 x 4 (0. 104) 0.0049 (0. 124) Source Pad 0.0041 (0. 104) 0.0049 (0. 124) •Meets or exceeds specification for all part

Contextual Info: VN0606 VN0610 fàkSupertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs BVdss/ If Ordering Information Order Number / Package b v tcs RdS ON (max) 60V 3n 1.5A VN0606L 60V 5£2 0.75A VN0610LL TO-92 Features Advanced DMOS Technology C These enhancement-mode (normally-off) transistors utilize a

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VN0610LL Small-Signal Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS N-CHANNEL SMALL-SIGNAL TMOS FET rDS on = 5 OHMS 60 VOLTS . . . are designed fo r high volta g e , high speed a pp lica tio n s such as

VN0605T

Abstract: VN0610LL VN10LLS VN2222LL
Contextual Info: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0

Contextual Info: WTELEDYNE COMPONENTS VN0610LL VN2222LL N-CHANNEL ENHANCEMENT-MODE DMOS POWER FETs FEATURES ABSOLUTE MAXIMUM RATINGS • ■ ■ Drain-Source Voltage. +60V Drain-Gate Voltage Vgs = 0 . +60V

2222LM

Abstract: 0610LL vn10 N10LM
Contextual Info: T em ic VNlO/0605/0610/2222 Series S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary P a rt N um ber rDSion M a x Q ) VG S(th) (V ) I d M in (A ) VN 10LE 5 @ V Gs = 10 V

222ll

Abstract: 10LLS
Contextual Info: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number rDS(on) Max (Q) V (BR)DSS M in (V) VN10LLS 5 @ V GS = 1 0 V VN0605T 5 @ V Gs = 10 V 60 VN0610LL 5 @ V GS = 10 V VN2222LL 5 FEATURES @VGS = 10V VGS(th)(V)

vn0606

Contextual Info: Ofì Supertex ï l~ IC m VN0606 VN0610 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV / R d S ON bq s (max) Order Number / Package if B Vdss TO-92 60V 3£i 1.5A VN0606L 60V 5Î2 0.75A VN0610LL Features Advanced DMOS Technology L i Free from secondary breakdown

N0610

Contextual Info: V N 0606 V N 0610 LJàSupertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B VDSS/ R d s <o n *D O N ) b v dgs (max) (min) 60V 3£i 60V Order Number / Package TO-92 1.5A VN0606L 0.75A VN0610LL Features Advanced DMOS Technology

Contextual Info: JB’SfSSfe VNDS06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • 2N7000, VN0610LL, VN2222LL Single TO-237 • VN2222LM Single SOT-23 • VN0605T, 2N7002 Quad 14-Pin Plastic • VQ1000J Quad 14-Pin Dual-ln-Line • VQ1000P Quad

2222ll

Abstract: 10LLS ST C 236 DIODE 0605T
Contextual Info: — _ VN10LE/LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number rDS on Max (Q ) V GS(th) (V) lD Min (A) VN1 OLE 5 @ V GS = 10 V 0.8 to 2.5 0.38 VN 10LLS 5 @ V GS = 10 V 0.8 to 2.5

VN0606

Abstract: p-channel DMOS VN0606L VN0610LL vn0606A
Contextual Info: VN0606 VN0610 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 3Ω 1.5A VN0606L 60V 5Ω 0.75A VN0610LL TO-92 Features Advanced DMOS Technology • Free from secondary breakdown