VN10 Search Results

VN10LFTA

Abstract: VN10L
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LF ISSUE 2 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS on =5Ω D PARTMARKING DETAIL – S MY G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb = 25°C

vn10K

Contextual Info: 0ì Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BVdss / BVdgs ^DS ON ' d (on ) (max) (min) TO-52 TO-92 60V 5Q 0.75A VN10KN9 VN10KN3 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process

Contextual Info: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices B V qqs R dS<ON max) 60V 5.0ÌÌ Order Number / Package If BV dss / TO-92 0.75A VN10KN3 Features Advanced DMOS Technology □ Free from secondary breakdown

VN10KN

Abstract: VN10KN9 vn10k
Contextual Info: V N 10K Mï Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BV0SS / ^DS<ON *D ON) BV dgs (max) (min) TO-52 TO-92 60V 5£2 0.5A VN10KN9 VN10KN3 Advanced DMOS Technology High Reliability Devices

VN10K

Contextual Info: VN10K Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VN10K 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

VN10K

Abstract: VN0106N3 VN10KN3-G sivn
Contextual Info: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input

10kls

Abstract: 0610L VN10KLS 2222L VN0610L VN2222L
Contextual Info: VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V D-S MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5

VQ1000P

Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25

Contextual Info: un itti llll SEME VN10KCSM4 LAB N-CHANNEL ENHANCEMENT MODE MOSFET MECHANICAL DATA Dimensions in mm inches 1.02±0.20 (0.04 ± 0.006) 2.03 ± 0.20 (0.08 ± 0.008) LCC3 - CERAMIC SURFACE MOUNT PACKAGE PIN 1 - Drain Underside View PIN 2 - N/C PIN 3 - Gate ABSOLUTE MAXIMUM RATINGS

Contextual Info: VN10K S u p e rte x inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss/ R DS ON ^D(ON) BVdgs (max) (min) TO-52 TO-92 60V 5Q 0.75A VN10KN9 VN10KN3 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process

VN0610L

Abstract: TL032
Contextual Info: N-Channel Enhancement-Mode MOS Transistors, Zener Gate Protected CQIOOIC CORPORATION VN0610L / VN10KE/ VN10KM/ VN10KT ORDERING INFORMATION FEATURES • Available in Surface Mount SOT-23 • Zener protected • Low rDS on <5fl • 60V Bv APPLICATIONS Temperature Range

buz 350 equivalent

Abstract: VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM
Contextual Info: Siliconix 1-1? f l MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25

VN0300M

Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25

2N6658

Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0

Contextual Info: Digital Vane Sensor VN1015 Sensors Magnetically activated digital vane sensor in a rugged, overmolded plastic housing with three pins or 3-wire flying leads Description The VN1015 sensors employ a Hall Effect digital vane sensor and a permanent magnet in two small towers, separated by a 3.4

VN10LP

Abstract: zvn330 ZVN3306A
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LP ISSUE 2 – NOVEMBER 2005 FEATURES * 60 Volt VDS * RDS on =5Ω D G REFER TO ZVN3306A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 60 UNIT

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET VN10LF ISSUE 2 - JANUARY 1996_ FEATURES * 60 Volt V DS * R DS,0n =5 ^ P A R T M A R K IN G D ETA IL - MY ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BO L Drain-Source Voltage V DS 60

MOSFET vn2222l

Abstract: VN10KLS
Contextual Info: VN0610L, VN10KE/KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 5 @ VGS = 10 V

VN10lm

Contextual Info: VN061 OLL, VN 10LM N-Channel Enhancement-Mode MOS Transistors .B Ü fiSSS TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (BR)DSS (V) r DS(ON) (H ) (A) PACKAGE VN0610LL 60 5 0.28 TO-92 VN10LM 60 5 0.32 TO-237 Performance Curves: VNDS06 •d 1 SOURCE

TO206AC

Contextual Info: VNDP06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-52 TO-206AC • VN10KE Single TO-92 (TO-226AA) • VN0610L, VN2222L Single TO-237 • VN10KM Single Chip • Available as VNDP1CHP .Bissate DEVICE TYPÍCAL CHARACTERISTICS Ohmic Region Characteristics

VN10KM

Contextual Info: ÜBSSb VNDP1 DIE N-Channel Enhancement-Mode MOS Transistor VNDP1CHP* VN0610L VN10KE VN10KM VN2222L ‘ Meets or exceeds specification for all part numbers listed below Gate Pad 0.0088 0 . 224 0.0063 ( 0.161 Source Pad For additional design information please consult the

Contextual Info: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS ON (m ax) Id(ON) (m in) 60V 5.0Q. 0.75 A O rder N um ber / Package TO-92 VN10KN3 Features Advanced DMOS Technology □

Contextual Info: VN10KM Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)310m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)

Contextual Info: VN10LM Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)30 I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)