SIVN Search Results

VN10K

Abstract: VN0106N3 VN10KN3-G sivn
Contextual Info: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input

ADC84

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R - BROW N ADC84 ADC85H ADC87H IC ANALOG-TO-DIGITAL CONVERTERS FEATURES • INDUSTRY STANDARD 12-BIT A/D CONVERTERS • THREE TEMPERATURE RANGES: 0°C to +70°C—ADC84 -25°C to +85°C—ADC85H

optoacoplador

Abstract: ABB flowmeter COPA-XE DE43F esquema computador DE43F DE41F FXE4000 ABB flowmeter COPA-XE mag-xe led vermelho D184B132U02
Contextual Info: D184B133U02 FXE4000 COPA-XE/MAG-XE Inbetriebnahmeanleitung Magnetisch-induktiver Durchflussmesser FXE4000 (COPA-XE/MAG-XE) Commissioning Instructions Electromagnetic Flowmeter FXE4000 (COPA-XE/MAG-XE) Notice de mise en service Débitmètre électromagnétique

sivn

Abstract: VN4E seimens MARKING CODE BV sot-89 125OC VN2450
Contextual Info: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

sivn

Abstract: vn4f mark A E sot-89 VN2460 125OC SOT89 mos VN2460N8-G 3V02 VN2460N3-G
Contextual Info: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

sivn

Abstract: sivn fet marking n3 VN0109N3-G VN0109
Contextual Info: VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input

TF 6221 HEN LED display

Abstract: Rockwell R68560 BA 658 Bar-Graph Display Driver 1/TF 6221 HEN LED display I 0939 controller Display 6502 CPU architecture block diagram 6502 microprocessor National Semiconductor Linear Data Book R6518 r68561
Contextual Info: 1987 CONTROLLER PRODUCTS DATA BOOK Rockwell International Sem iconductor Products Division R ockw ell International Corporation 1987 All Rights reserved Printed in U.S.A. O rder No. 3 July 1987 Rockwell Semiconductor Products Division Is headquartered in Newport Beach, California with Field Sales Offices located

Contextual Info: 1 2 Z E - r X W Z £ 0 OI0 - N 3 \ I £ I b " e £ T l l ä i » » ; > B m « c o s s a a ) 3 3 Sää*»|ie£#iäcB (#) r t n í í B B i H í N0IS5IN Ü3d N311IHM in O H lIM Q35n 30 ION GinOHS QNV [NVdVDX310H 01 AaV13Iüd0ad S I 1VH1 NOIlVNÜOdNI SNIV1NOO ONIWVidQ S IH i

Contextual Info: Supertex inc. VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input

125OC

Abstract: VF15 VN0104 VN0104N3-G VN1504NW
Contextual Info: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input

Contextual Info: Supertex inc. VN0550 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

Contextual Info: f Z 7 S C S -m O M S O N JÆ, I M » I [ L I ^ [ M i * S T 7 5 C 530 S T 7 5 C 540 SUPER INTEGRATED DEVICES WITH DSP, AFE & MEMORIES FOR TELEPHONY, MODEM, FAX OVER INTERNETS, POTS LINES PRELIM IN ARY DATA SUMMARIZED FEATURES (for detailed features, see page 4

Contextual Info: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode

sivn

Abstract: sivn fet
Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

a50tf

Abstract: sivn SiVN 0 8 0 8 L VN2106 125OC VN2106N3-G
Contextual Info: VN2106 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► The Supertex VN2106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

sivn

Abstract: VN0550 VN0550N3-G 125OC
Contextual Info: VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN0550 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

sivn

Abstract: sivn fet vn10kn3-g SiVN 0 8 0 8 L VN10KN VN10KN3 VN0106N3 VN10K
Contextual Info: VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

R68561

Abstract: R68560AP R68560/R68561 R68560
Contextual Info: BROOKTREE b3E CORP D • 1 1, 4 53 =1 5 0007507 IB ? «BR K R68560A • R68561A R68560A, R68561A Multi-Protocol Communications Controller MPCC DESCRIPTION FEATURES The R68560A, R68561A Multi-Protocol C om m unications Con­ troller (MPCC) interfaces a single serial com m unications chan­

sivn fet

Abstract: sivn
Contextual Info: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

marking 3A sot-89

Abstract: 3V02 SIVN3205 VN3205
Contextual Info: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

P014 DIODE marking

Abstract: VN3205N3-GP013 TO-92 Package Dimensions diode inc
Contextual Info: Supertex inc. VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability

125OC

Abstract: VF15 VN0550 VN0550N3-G VN1550NW
Contextual Info: Supertex inc. VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

Contextual Info: Supertex inc. VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode