B030411 Search Results

SiTN

Abstract: TN0106 TN0106N3-G TN1506NW VF15
Contextual Info: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,

125OC

Abstract: VF15 VN0104 VN0104N3-G VN1504NW
Contextual Info: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input

125OC

Abstract: VF15 VP0550 VP1550NW SIVP VP1550ND
Contextual Info: Supertex inc. VP0550 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

sivp VP0104

Abstract: 125OC VF15 VP0104 VP0104N3-G VP1504ND
Contextual Info: Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

SiTN

Contextual Info: Supertex inc. TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold - 2.0V max. High input impedance Low input capacitance - 50pF typical Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

Contextual Info: Supertex inc. VP0550 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability

Contextual Info: Supertex inc. VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input

125OC

Abstract: VF15 VN0550 VN0550N3-G VN1550NW
Contextual Info: Supertex inc. VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

VN0109Nw

Abstract: VN1509Nd 125OC VF15 VN0109 VN0109N3-G VN1509NW
Contextual Info: Supertex inc. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

TN0110N3-G

Abstract: TN0110 TN1510NW VF15
Contextual Info: Supertex inc. TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,

Contextual Info: Supertex inc. VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

Contextual Info: Supertex inc. VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds