VN0109 Search Results

SD oid 3C

Abstract: VN0104N6
Contextual Info: VN0104 VN0106 VN0109 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Num ber / Package BVDSS / ^DS ON ^D(ON) (max) (min) b v dgs TO-52 TO-92 Quad P-DIP* Diet 40V 3.0Î2 2.0A — VN0104N3 VN0104N6 — 60V 3.0Î2 2.0A

Contextual Info: 'l £ii£u / ioaucii, One. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features '" »> » *• * *• *• Free from secondary breakdown Low power drive requirement Ease of paralleling Low Ciss and fast switching speeds Excellent thermal stability

VN0109

Contextual Info: Supertex inc. VN0109 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0109 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

sivn

Abstract: sivn fet marking n3 VN0109N3-G VN0109
Contextual Info: VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

VN0109N5

Abstract: VN0109N VN0109N2 VN0104N3 VN0106N7 VN0109 FAST DMOS FET Switches
Contextual Info: Super t e x inc VN0104 VN0106 VN0109 • N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information JÎ BV0SS/ ^DS ON BV qgs (max) Order Number / Package TO-39 TO-52 TO-92 TO-220 Quad P-DIP* Quad C-DIP* Diet — — VN0104N3 — VN0104N6 — VN0104ND

Contextual Info: S UP ER TEX 8773295 SUPERTEX INC Ql m T| 0 7 73 2^ 5 0 D0 17Ö 3 T 01E 01783 INC ertexinc. VN0106NE / VN0109NE Surface Mount ZS N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array Ordering Information ^DS ON ^ aX Order Number / Package 16 Terminal Ceramic L C C

VN0109n5

Abstract: VN0106N9 VN0106N5 VN0106N6 VN0109N2 VN0104N6 FAST DMOS FET Switches
Contextual Info: ^Supertex inc. VN0104 VN0106 VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information b v dss / b v dgs ^DS ON Order Number / Package I d (ON) (max) (min) TO-39 TO-52 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICEt 40V 3Î2 2.0A VN0104N2 VN0104N9

VN0109Nw

Abstract: VN1509Nd 125OC VF15 VN0109 VN0109N3-G VN1509NW
Contextual Info: Supertex inc. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

VN0109N5

Abstract: VN0106N6 VN0109N2 AN-D15 VN0104 VN0104N3 VN0104N6 VN0106 VN0106N3 VN0109
Contextual Info: DMOS Application Note AN-D15 3 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon. The VN0104/VN0106/VN0109 data sheet was chosen as an

Contextual Info: VN0109N4 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)90 V(BR)GSS (V) I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC)

VN0104N2

Abstract: VN0106N5 VN0109 VN0106N9 VN0109N vn0109n5 VN0104/VN0106A/N0109
Contextual Info: VN0104 VN0106 VN0109 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS/ BVdgs R d S ON Order Number / Package I d (ON) (max) (min) TO-39 TO-52 TO-92 TO-220 Quad P-DIP* Quad C-DIP* Die' 40V 3Q 2.0A VN0104N2 VN0104N9 VN0104N3

VN0109

Contextual Info: VN0109 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0109 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

VN1509

Contextual Info: Supertex inc. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode

VN0109

Abstract: vn0109n5 VN0106 vn0109n2 VN0109N9 VN0104ND VN0104N6 VN0104 VN0104N3 VN0106N3
Contextual Info: VN0109 E – T E L O S B –O VN0104 VN0106 VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) BVDGS (max) (min) TO-39 TO-52 TO-92 TO-220 Quad P-DIP* Quad C-DIP* Die† 40V 3.0Ω 2.0A —

vn01a

Abstract: ceramic LDR VN0106NE VN0109NE
Contextual Info: SUPERTEX 8773295 SUPERTEX INC Ql m T| 0 7 7 3 2 ^ 5 0 D 0 1 7 Ö 3 T 01E 01783 INC ertexinc. VN0106NE / VN0109NE Surface Mount ZS N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array Ordering Information b v dss/ b v dos ^DS ON| ^ aX Order Number / Package

Contextual Info: Supertex inc. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► ►► ►► ►► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,

Contextual Info: VN0109N9 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)90 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55

Supertex vn1509nd

Abstract: SIVN01
Contextual Info: Supertex inc. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

VN0104N6

Abstract: VN0106N6 VN0109N3 VN0104 VN0104N3 VN0106 VN0106N3 VN0109 VN0109N9 VN0109ND
Contextual Info: VN0104 VN0106 VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) BVDGS (max) (min) TO-52 TO-92 Quad P-DIP* Die† 40V 3.0Ω 2.0A — VN0104N3 VN0104N6 — 60V 3.0Ω 2.0A — VN0106N3 VN0106N6

VN0109n5

Abstract: vn0109n2 VN0109N9 VN0106N3 VN0106N6 VN0109 VN0109N3 VN0104 VN0104N3 VN0104N6
Contextual Info: VN0104 VN0106 VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) BVDGS (max) (min) TO-39 TO-52 TO-92 TO-220 Quad P-DIP* Quad C-DIP* Die† 40V 3.0Ω 2.0A — — VN0104N3 — VN0104N6 —

Contextual Info: Supertex inc. VC0106 Complementary Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information b v dss / b v dgs ^ ds on (max) Q1 + Q2 or Q3 + Q4 60V 11Q Order Number / Package 14-Pin P-Dip VC0106N6 Features Advanced DMOS Technology □ 4 independent channels

VN0106N7

Contextual Info: — VN0104N6/VN0104N7 VN0106N6/VN0106N7 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information b v dss/ R d S ON Order Number / Package BVdgs (max) 14-Pin P-Dip 14-Pin C-Dip* 40V 3Q VN0104N6 VN0104N7 60V 3Q VN0106N6 VN0106N7 * 14-pin Side Brazed C eram ic Dip.

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157