VN0106N3 Search Results
VN0106N3 Datasheets (11)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| VN0106N3 | Supertex | N-Channel Enhancement-Mode Vertical DMOS FET | Original | 483.06KB | 4 | ||
| VN0106N3 | Supertex | TRANS N-CHAN MOSFET | Original | 600.28KB | 5 | ||
| VN0106N3 | Unknown | FET Data Book | Scan | 58.15KB | 1 | ||
| VN0106N3 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 122.51KB | 1 | ||
| VN0106N3 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 166.5KB | 1 | ||
| VN0106N3 | Unknown | Shortform Datasheet & Cross References Data | Short Form | 89.58KB | 1 | ||
| VN0106N3 | Topaz Semiconductor | 60 V, 3 ?, N-channel enhancement-mode D-MOS power FET | Scan | 69.12KB | 2 | ||
| VN0106N3-G | Microchip Technology | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 350MA TO92-3 | Original | 613.51KB | |||
| VN0106N3-G-P003 | Microchip Technology | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 350MA TO92-3 | Original | 613.51KB | |||
| VN0106N3GP013 | Supertex | Transistor Mosfet N-CH 250V 25.5A 3I2PAK TUBE | Original | 753.42KB | 9 | ||
| VN0106N3P014 | Supertex | Transistor Mosfet N-CH 60V 3TO-92 T/R | Original | 480.27KB | 4 |
VN0106N3 Price and Stock
Microchip Technology Inc VN0106N3-GTrans MOSFET N-CH Si 60V 0.35A 3-Pin TO-92 Bag |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
VN0106N3-G | 1,000 | 3 |
|
Buy Now | ||||||
| VN0106N3-G | 500 | 100 |
|
Buy Now | |||||||
| VN0106N3-G | 303 | 96 |
|
Buy Now | |||||||
| VN0106N3-G | 49 | 11 |
|
Buy Now | |||||||
|
VN0106N3-G | Bag | 13 Weeks | 1,000 |
|
Buy Now | |||||
|
VN0106N3-G | 11,202 |
|
Buy Now | |||||||
|
VN0106N3-G | 1,000 | 4 Weeks | 1 |
|
Buy Now | |||||
| VN0106N3-G | 49 | 13 Weeks | 1 |
|
Buy Now | ||||||
|
VN0106N3-G | Bulk | 697 | 1 |
|
Buy Now | |||||
| VN0106N3-G | Bulk | 1,000 |
|
Buy Now | |||||||
|
VN0106N3-G | Bulk | 9 Weeks | 1,000 |
|
Get Quote | |||||
|
VN0106N3-G | Bag | 28,500 | 6 Weeks |
|
Buy Now | |||||
|
VN0106N3-G | 514 |
|
Buy Now | |||||||
|
VN0106N3-G | 10 |
|
Get Quote | |||||||
|
VN0106N3-G | 6 Weeks | 1,000 |
|
Get Quote | ||||||
|
VN0106N3-G | 5 Weeks | 1,000 |
|
Get Quote | ||||||
|
VN0106N3-G | 514 |
|
Buy Now | |||||||
Microchip Technology Inc VN0106N3-G-P003- Tape and Reel (Alt: VN0106N3-G-P003) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
VN0106N3-G-P003 | Tape & Reel | 13 Weeks | 2,000 |
|
Buy Now | |||||
|
VN0106N3-G-P003 | 2,699 |
|
Buy Now | |||||||
|
VN0106N3-G-P003 | Tape & Reel | 2,000 |
|
Buy Now | ||||||
|
VN0106N3-G-P003 | Bulk | 9 Weeks | 2,000 |
|
Get Quote | |||||
|
VN0106N3-G-P003 | Tape & Reel | 830 | 6 Weeks |
|
Buy Now | |||||
|
VN0106N3-G-P003 |
|
Buy Now | ||||||||
|
VN0106N3-G-P003 | 6 Weeks | 2,000 |
|
Get Quote | ||||||
|
VN0106N3-G-P003 |
|
Buy Now | ||||||||
Microchip Technology Inc VN0106N3 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
VN0106N3 |
|
Buy Now | ||||||||
Supertex Inc VN0106N3Trans MOSFET N-CH Si 60V 0.35A 3-Pin TO-92 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
VN0106N3 | 123 |
|
Get Quote | |||||||
|
VN0106N3 | 656 |
|
Buy Now | |||||||
| VN0106N3 | 1 |
|
Buy Now | ||||||||
|
VN0106N3 | 13 |
|
Buy Now | |||||||
Microchip Technology Inc VN0106N3-GP005Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
VN0106N3-GP005 | 897 |
|
Get Quote | |||||||
VN0106N3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: VN0106N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55 |
Original |
vn0106n3junc-case125 | |
vn0106
Abstract: VN0104 VN0104N3 VN0106N3
|
Original |
vn0104vn0106vn0104n3vn0106n3 | |
VN0104N6
Abstract: VN0106N6 VN0109N3 VN0104 VN0104N3 VN0106 VN0106N3 VN0109 VN0109N9 VN0109ND
|
Original |
vn0104vn0106vn0109vn0104n3+6 | |
vn10KContextual Info: 0ì Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BVdss / BVdgs ^DS ON ' d (on ) (max) (min) TO-52 TO-92 60V 5Q 0.75A VN10KN9 VN10KN3 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process |
OCR Scan |
vn10kvn10kn9vn10kn3 | |
SD oid 3C
Abstract: VN0104N6
|
OCR Scan |
vn0109n9vn0104n3vn0106n3vn0109n3+7 | |
VN10KN
Abstract: VN10KN9 vn10k
|
OCR Scan |
vn10kn9vn10kn3300nsvn10k+1 | |
VN10K
Abstract: VN0106N3 VN10KN3-G sivn
|
Original |
vn10kdsfp-vn10kb031411vn0106n3+2 | |
TN0604N3
Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
|
Original |
2n6659vn2210n2tn0104n32n7007+16 | |
TO243AA
Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
|
Original |
2n7000-g2n7002-gdn1509n8-gdn2470k4-g+16 | |
TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
|
Original |
1n32451n3611gp1n3612gp1n3613gp+16 | |
|
Contextual Info: Supertex inc. VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input |
Original |
vn0106dsfp-vn0106b071411 | |
mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
|
Original |
t0-92options4206azvn4206czvn4206e+15 | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
|
Original |
gp-20fsq510 equivalentbta12 6008bta16 6008+7 | |
TA 8783 N
Abstract: pin IC 8783 n ss 7941 941L
|
OCR Scan |
qqqb471vn0104vn0106o-226aa+10 | |
|
|
|||
|
Contextual Info: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS ON (m ax) Id(ON) (m in) 60V 5.0Q. 0.75 A O rder N um ber / Package TO-92 VN10KN3 Features Advanced DMOS Technology □ |
OCR Scan |
vn10kvn10kn3 | |
DN2540N5
Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
|
Original |
2n70002n70022n7008dn2470k4+15 | |
vn10K
Abstract: VN10KN
|
Original |
vn10kdsfp-vn10ka102108vn10kn | |
|
Contextual Info: Supertex inc. VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input |
Original |
vn0106dsfp-vn0106b030411 | |
|
Contextual Info: VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination |
Original |
vn0106dsfp-vn0106a091508 | |
VN0106N9
Abstract: VN0109N5 VN0106N5 VN0106N2 VN0104N5 VN0104N2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V N-Channel Depletion-Mode MOSFET high voltage VN0106N6 VN0106
|
Original |
an-d15vn0104/vn0106/vn0109vn0104vn0106+10 | |
sivn
Abstract: sivn fet vn10kn3-g SiVN 0 8 0 8 L VN10KN VN10KN3 VN0106N3 VN10K
|
Original |
vn10kdsfp-vn10ka022109sivn+6 | |
VN10KN3
Abstract: VN0106N3 VN10K vn10kn
|
Original |
vn10kvn10kn3vn0106n3vn10kn | |
VN0106Contextual Info: VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination |
Original |
vn0106dsfp-vn0106a102907 | |
VN0109N5
Abstract: VN0109N VN0109N2 VN0104N3 VN0106N7 VN0109 FAST DMOS FET Switches
|
OCR Scan |
vn0104vn0106vn0109vn0109n2+9 | |